SMD TRANSISTOR MARKING CODE 24 Search Results

PBSS306NX

Abstract: PBSS306PX MSA44
Contextual Info: PBSS306NX 100 V, 4.5 A NPN low VCEsat BISS transistor Rev. 01 — 21 August 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

transistor smd code marking 420

Abstract: PBSS305NX PBSS305PX Transistors SOT89 smd
Contextual Info: PBSS305PX 80 V, 4.0 A PNP low VCEsat BISS transistor Rev. 01 — 22 August 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

PBSS8110X

Abstract: PBSS9110X
Contextual Info: PBSS8110X 100 V, 1 A NPN low VCEsat BISS transistor Rev. 01 — 11 May 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: PBSS9110X.

PMV40UN2

Contextual Info: SO T2 3 PMV40UN2 30 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

transistor smd ZR

Abstract: MARKING SMD PNP TRANSISTOR Zr transistor smd ZR npn TRANSISTOR SMD MARKING CODE UA transistor SMD BP smd transistor marking zr smd code marking sot23 philips transistor smd code TRANSISTOR SMD MARKING CODE transistor ZR 08
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PC4617J NPN general purpose transistor Product specification Supersedes data of 1999 May 04 2001 Aug 03 Philips Semiconductors Product specification NPN general purpose transistor 2PC4617J PINNING FEATURES • Power dissipation comparable to SOT23

dupont mylar

Abstract: BPA06HPA SMD CODE LM317 LM317LMX
Contextual Info: LM317L 3-Terminal Adjustable Regulator General Description The LM317L is an adjustable 3-terminal positive voltage regulator capable of supplying 100mA over a 1.2V to 37V output range. It is exceptionally easy to use and requires only two external resistors to set the output voltage. Further,

TRANSISTOR SMD MARKING CODES

Abstract: PBSS2540E PBSS3540E SC-75 SMD mosfet MARKING code T
Contextual Info: PBSS3540E 40 V, 500 mA PNP low VCEsat BISS transistor Rev. 01 — 3 May 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. NPN complement: PBSS2540E.

Contextual Info: Product specification PMV90EN 30 V, single N-channel Trench MOSFET Rev. 1 — 13 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: Product specification PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Rev. 1 — 26 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench

lm317 8pin smd

Abstract: lm317l constant current led driver lm317 smd code 3k TRANSISTOR SMD MARKING CODE d2 LM317 SMD LM317* voltage regulator as current source 4 to 20ma current source lm317 SMD TRANSISTOR MARKING 1F lm317l national
Contextual Info: LM317L 3-Terminal Adjustable Regulator General Description The LM317L is an adjustable 3-terminal positive voltage regulator capable of supplying 100mA over a 1.2V to 37V output range. It is exceptionally easy to use and requires only two external resistors to set the output voltage. Further, both line

SFH6136-X001

Abstract: SFH6136X001 Transistor 03 smd Optocoupler 701 8-SMD SMD TRANSISTOR MARKING 904 smd transistor RL
Contextual Info: SFH6135, SFH6136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output FEATURES NC 1 8 C VCC • Isolation test voltage 5300 VRMS A 2 7 B (VB) • TTL compatible C 3 6 C (VO) • High bit rates: 1 MBit/s NC 4 5 E (GND) • High common mode interference immunity

SMD TRANSISTOR MARKING w7

Contextual Info: PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

Contextual Info: Product specification PMV65UN 20 V, single N-channel Trench MOSFET 13 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

K934

Abstract: CSP1034 Krypton isolation k952 TRANSISTOR SMD MARKING CODE R8 smd diode code GU K936 k2950 Motorola modem schematic diagram 56k MARKING d4 SMD PNP TRANSISTOR
Contextual Info: K²950G/K²950GU DATA ACCESS ARRANGEMENT CHIPSET HIGH PERFORMANCE, LOW COST, ALL SILICON DAA DATA ACCESS ARRANGEMENT FOR US (FCC), CANADA (DOC), and JAPAN (JATE) APPLICATIONS FEATURES ♦ High performance for modems up to V.34/ 33.6Kbps and V.90/56Kbps ♦ Low power consumption: 20mW active,

Contextual Info: SFH6325, SFH6326 www.vishay.com Vishay Semiconductors High Speed Optocoupler, Dual Channel, 1 MBd, Transistor Output FEATURES A1 1 8 C VCC C1 2 7 C1(VO1) C2 3 6 C2(VO2) 4 5 E(GND) A2 i179071-3 • • • • • • • V D E i179026 DESCRIPTION Isolation test voltage, 5300 VRMS

S305NZ

Abstract: PBSS305NZ PBSS305PZ SC-73
Contextual Info: PBSS305NZ 80 V, 5.1 A NPN low VCEsat BISS transistor Rev. 01 — 19 September 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

S306NZ

Abstract: PBSS306NZ PBSS306PZ SC-73 philips transistor smd code
Contextual Info: PBSS306NZ 100 V, 5.1 A NPN low VCEsat BISS transistor Rev. 01 — 20 September 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

S305PZ

Abstract: PBSS305NZ PBSS305PZ SC-73
Contextual Info: PBSS305PZ 80 V, 4.5 A PNP low VCEsat BISS transistor Rev. 01 — 20 September 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

smd TRANSISTOR code marking 2F

Abstract: SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD 9bb IR 1838 T smd marking dt2 TRANSISTOR SMD MARKING CODE kh irm 1838 IR 1838 3v IR 1838 T datasheet IR 1838
Contextual Info: Preliminary Data Sheet PD-20605 rev. A 01/99 HFA16TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits

PBSS4032PT

Abstract: NXP TRANSISTOR SMD MARKING CODE SOT23
Contextual Info: PBSS4032PT 30 V, 2.4 A PNP low VCEsat BISS transistor Rev. 01 — 18 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

Contextual Info: 2SAR542F3 Datasheet PNP -3.0A -30V Middle Power Transistor l Outline Parameter VCEO Value -30V IC -3A HUML2020L3 2SAR542F3 l Features 1 Suitable for Middle Power Driver. 2) Low V CE sat) VCE(sat)=-0.20V(Max.).

PBSS305ND

Abstract: PBSS305PD
Contextual Info: PBSS305ND 100 V, 3 A NPN low VCEsat BISS transistor Rev. 02 — 7 December 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.

40 V, 4 A PNP low VCEsat BISS transistor

Abstract: smd "marking codes" c9 PBSS302ND PBSS302PD
Contextual Info: PBSS302PD 40 V, 4 A PNP low VCEsat BISS transistor Rev. 02 — 6 December 2007 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.

st smd IC marking code

Abstract: 4262 G smd diode marking JC TRANSISTOR SMD MARKING CODE 42 AED01086 AEP02588 AES01082 AES01084 AET01085 KL15
Contextual Info: 5-V Low Drop Voltage Regulator TLE 4262 Bipolar IC Features ● ● ● ● ● ● ● ● ● Output voltage tolerance ≤ ± 2 % Low-drop voltage Very low standby current consumption Overtemperature protection Reverse polarity protection Short-circuit proof