SMD MARKING BC Search Results
SMD MARKING BC Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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| 9936/BCA | Rochester Electronics LLC | 9936 - Hex Inverter - Dual marked (M38510/03003BCA) |
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| 54AC86/SDA-R | Rochester Electronics LLC | 54AC86/SDA-R - Dual marked (M38510R75202SDA) |
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SMD MARKING BC Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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STK and STR integrated circuits
Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
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od-80ot-223ot-89stk and str integrated circuits+9 | |
Motorola transistor smd marking codes
Abstract: SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d
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ot-89ot-223c-1202001md+10 | |
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Contextual Info: SPECIFICATION FOR APPROVAL REF. : SR0805□□□□L□-□□□ ABC'S DWG NO. PROD. SMD Power Inductor NAME 20121002-E REV. PAGE 1 Marking Dot is the Inductance code reading marking 681 A Ⅰ﹒Configuration and dimensions: B A D F E C PCB Pattern |
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sr080520121002-e30sec60sec+6 | |
SMD MARKING CODE 101Contextual Info: SPECIFICATION FOR APPROVAL REF : 20111014-D PAGE: 1 PROD. NAME ABC'S DWG NO. SMD POWER INDUCTOR SR0805□□□□L□-□□□ ABC'S ITEM NO. Ⅰ﹒CONFIGURATION & DIMENSIONS: Marking Dot is the Inductance code reading marking 101 A A m/m B : 5.0±0.3 |
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20111014-dsr080530sec60sec+6 | |
polysol 155 0,16
Abstract: sr0604101k
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20111014-esr060430secp155p+7 | |
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Contextual Info: SCRH3D16 SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS 2 (1) SCRH3D16 Inductance decrease BCRH3D16 I nduct ance decr ease byby |
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scrh3d16bcrh3d16scrh3d16-1r5100khz+3 | |
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Contextual Info: SCRH3D16A SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS 2 (1) BCRH3D16A I nduct ance decrdecrease ease by cur ent SCRH3D16A |
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scrh3d16abcrh3d16ascrh3d16a-1r5100khz+3 | |
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Contextual Info: SCR63B SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS DC Resistance Ω MAX (2) (1) BCR63B I nduct ance decr ease by bycurrent |
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scr63b52mhzscr63b-120scr63b-150+2 | |
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Contextual Info: SC105B SMD POWER INDUCTORS XXX MARKING ● Features 1. Open frame construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS DC Resistance Ω MAX (2) (1) SC105B Inductance byrcurrent BC105B I nduct ance decrdecrease |
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sc105bbc105b52mhzsc105b-120+3 | |
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Contextual Info: SCRH5D18 SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency CHARACTERISTICS 2 (1) BCRH5D18 I nduct ance decrdecrease ease by cur ent SCRH5D18 Inductance by rcurrent |
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scrh5d18bcrh5d1810khzscrh5d18-4r1+2 | |
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Contextual Info: SC54B SMD POWER INDUCTORS XXX MARKING ● Features 1. Open frame construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS DC Resistance Ω MAX (2) (1) SC54B Inductance decrease BC54B I nduct ance decr easebybycurrent |
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sc54b52mhzsc54b-120sc54b-150+2 | |
BC856BWContextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC857AW =3E BC856AW =3A BC857BW =3F BC856BW =3B BC857CW =3G |
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bc856wot-323bc857awbc856aw+5 | |
BCX70G
Abstract: BCX70H BCX70J BCX70K SMD AJ aj smd npn
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ot-23bcx70gbcx70hbcx70j+4 | |
smd LB 012
Abstract: BCW89
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ot-23bcw89c-120smd lb 012 | |
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Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCW60A = AA BCW60B = AB BCW60C = AC |
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ot-23bcw60abcw60bbcw60c+2 | |
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Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N–P–N transisto r Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS |
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ot-23bcw65abcw65bbcw65c+1 | |
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Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW89 = H3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration |
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ot-23bcw89c-120 | |
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Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW81 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCW81 = K3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration |
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ot-23bcw81c-120 | |
BCX19
Abstract: BCX20
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ot-23bcx19bcx20c-120 | |
MARKING k3 SOT-23
Abstract: BCW81
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ot-23bcw81c-120marking k3 sot-23 | |
BCW61A
Abstract: BCW61B BCW61C BCW61D BCw6
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ot-23bcw61abcw61bbcw61c+3 | |
BCW60A
Abstract: BCW60B BCW60C BCW60D
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ot-23bcw60abcw60bbcw60c+2 | |
smd marking BG
Abstract: BCX71H BCX71J BCX71K BCX71G
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ot-23bcx71gbcx71hbcx71j+3 | |
BCW71
Abstract: BCW72 marking KL sot-23
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ot-23bcw71bcw72c-120+1 | |