SMD A7 Search Results

Contextual Info: / \ ¿ -A SRAM 64K x 4 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-88545, SMD 5962-88681 • MIL-STD-883, Class B • R adiation tolerant (consult factory) 24-Pin DIP FEATURES A0t A11 A2t A3t A 4t A 5t A6[ A7Ì A8Ì A9t

smd diode a7

Abstract: smd marking a7 smd diode marking A7 SOT-23 SMD a7 Transistor A7 diode smd smd transistor A7 smd diode marking a7 smd a7 DIODE smd marking A7 smd DIODes A7
Contextual Info: Diodes SMD Type High-Speed Double Diode KAV99 BAV99 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Repetitive peak forward current: max.450 mA. 0.55 High switching sped: max.4 ns. +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package. 0.4 3 2 +0.1 0.95-0.1

Contextual Info: EEPROM AS58C1001 Austin Semiconductor, Inc. 128K x 8 EEPROM PIN ASSIGNMENT Top View EEPROM Memory AVAILABLE AS MILITARY SPECIFICATIONS l l 32-Pin CFP (F & SF), 32-Pin CSOJ (DCJ) SMD 5962-38267 MIL-STD-883 RDY/BUSY\ A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O 0

Contextual Info: SRAM MT5C6401 64K x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 22-Pin DIP (C) (300 MIL) AVAILABLE AS MILITARY SPECIFICATIONS A0 A1 A2 A3 A4 A5 A6 A7 Q WE\ Vss • SMD 5962-86015 • MIL-STD-883 FEATURES • Speeds: 12, 15, 20, 25, 35, 45, 55, and 70ns

Contextual Info: EEPROM AS58C1001 128K x 8 EEPROM PIN ASSIGNMENT Top View EEPROM Memory 32-Pin CFP (F & SF), 32-Pin CSOJ (DCJ) AVAILABLE AS MILITARY SPECIFICATIONS z z RDY/BUSY\ A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O 0 I/O 1 I/O 2 Vss SMD 5962-38267 MIL-STD-883 FEATURES

Contextual Info: SRAM MT5C6405 16K x 4 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 24-Pin DIP (C) (300 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-86859 • MIL-STD-883 A5 A6 A7 A8 A9 A10 A11 A12 A13 CE\ OE\ Vss FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns

AS8S512K3

Abstract: 5962-9461109HMX
Contextual Info: SRAM AS8S512K32 & AS8S512K32A 512K x 32 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 SMD 5962-94611 (Military Pinout)

MT5C6401

Contextual Info: SRAM MT5C6401 Austin Semiconductor, Inc. 64K x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 22-Pin DIP (C) (300 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • • A0 A1 A2 A3 A4 A5 A6 A7 Q WE\ Vss SMD 5962-86015 MIL-STD-883 FEATURES • Speeds: 12, 15, 20, 25, 35, 45, 55, and 70ns

Contextual Info: White Electronic Designs WMF512K8-XXX5 512Kx8 MONOLITHIC FLASH, SMD 5962-96692 FEATURES Access Times of 60, 70, 90, 120, 150ns Organized as 512Kx8 Packaging Commercial, Industrial and Military Temperature Ranges • 32 pin, Hermetic Ceramic, 0.600" DIP Package 300

Contextual Info: FEATURES DESCRIPTION □ 45 ns Multiply-Accumulate Time □ Low Power CMOS Technology □ Replaces TRW TDC1009/TM C2009 □ Tw o's Complement or Unsigned Operands □ Accumulator Performs Preload, Accumulate, and Subtract □ Three-State Outputs □ DESC SMD No. 5962-90996

Contextual Info: LMV981 RRIO, 1.8V, Operational Amplifier in micro SMD with Shutdown General Description Features The LMV981 is a single low voltage, low power operational amplifier. LMV981 is guaranteed to operate from +1.8V to +5.0V supply voltages and have rail-to-rail input and output.

WE512K8

Abstract: 128kx8 eeprom
Contextual Info: WE512K8, WE256K8, WE128K8-XCX White Electronic Designs 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FIGURE 1 FEATURES „ Read Access Times of 150, 200, 250, 300ns „ JEDEC Standard 32 Pin, Hermetic Ceramic DIP Package 300

fast page mode dram controller

Abstract: MT4C4001J
Contextual Info: MT4C4001J 883C 1 MEG x 4 DRAM AUSTIN SEMICONDUCTOR, INC. DRAM 1 MEG x 4 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-90847 • MIL-STD-883 FEATURES • Industry standard x4 pinout, timing, functions and packages

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BAV99 SILICON PLANAR EPITAXIAL HIGH–SPEED DIODES Silicon planar high-speed switching series diode pair

SD10

Abstract: SD13 SD14 SD15 WSF128K16-XXX TWS 434 pin diagram SD3 smd
Contextual Info: WSF128K16-XXX HI-RELIABILITY PRODUCT 128KX16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES • Commercial, Industrial and Military Temperature Ranges ■ Access Times of 35ns SRAM and 70ns (FLASH) ■ TTL Compatible Inputs and Outputs ■ Access Times of 70ns (SRAM) and 120ns (FLASH)

PDM41024S25

Abstract: CY7C1009-20DMB SMJ5C1008-25HMM 5962-89598 qml-38535 S128K8L-55MC pdm41024l25tcb PDM41024-S20L32 PDM41024L20TCB GDIP1-T32
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED E Redrawn with changes. Update case X to standard package. Add case 8. Add vendor CAGE 66301 as source of supply for case 8. Convert document to updated SMD boilerplate. Editorial changes throughout. 93-09-30

5962-9650901QXA

Abstract: SN54ABT7820
Contextual Info: SN54ABT7820 512 x 18 × 2 STROBED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY SGBS303E – AUGUST 1994 – REVISED APRIL 2000 D D D D D D Member of the Texas Instruments Widebus  Family Advanced BiCMOS Technology Released as DSCC SMD Standard Microcircuit Drawing 5962-9650901QXA

Contextual Info: LM A1009/2009 12 x 12-bit M ultiplier-Accum ulator DEVICES INCORPORATED 1 FEATURES | DESCRIPTION □ 20 ns Multiply-Accumulate Time □ DECC SMD No. 5962-90996 The LMA1009 and LMA2009 are high­ speed, low power 12-bit multiplieraccumulators. They are pin-for-pin

Contextual Info: White Electronic Designs WS128K32-XXX 128Kx32 SRAM MODULE, SMD 5962-93187 & 5962-95595 FEATURES Access Times of 15, 17, 20, 25, 35, 45, 55ns Low Power CMOS MIL-STD-883 Compliant Devices Available TTL Compatible Inputs and Outputs Packaging Built in Decoupling Caps and Multiple Ground Pins

smd diode marking 5d

Abstract: smd diode marking A7 SOT-23 DIODE smd marking A4 smd diode 5d smd code marking 5D smd diode A4 SOT23 DIODE marking CODE AV smd diode a7 A7 w sot-23 5d smd sot-23
Contextual Info: MMBD4148/SE/CC/CA 350mW SMD Switching Diode Small Signal Diode SOT-23 A Features F B E —Fast switching speed —Surface device type mounting C —Moisture sensitivity level 1 D —Matte Tin Sn lead finish with Nickel(Ni) underplate —Pb free version and RoHS compliant

C91C

Abstract: 04H9X WS128K32N-XH1X 01H9X
Contextual Info: WS128K32-XXX 128Kx32 SRAM MODULE, SMD 5962-93187 FEATURES n Access Times of 70, 85, 100, 120ns n Commercial, Industrial and Military Temperature Ranges n MIL-STD-883 Compliant Devices Available n 5 Volt Power Supply n Packaging • 66-pin, PGA Type, 1.075 inch square, Hermetic

A7W 85

Abstract: BAV99 A7w
Contextual Info: Product specification BAV99 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Repetitive peak forward current: max.450 mA. 1 0.55 High switching sped: max.4 ns. +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05

Contextual Info: SMJ320C31, SMJ320LC31, SMQ320LC31 DIGITAL SIGNAL PROCESSORS SGUS026D – APRIL 1998 – REVISED DECEMBER 2000 D –55°C to 125°C Operating Temperature D D D D D D D D D D D Range, QML Processing Processed to MIL-PRF-38535 QML SMD Approval High-Performance Floating-Point Digital

smd marking g23

Abstract: 5962-9084703MXA smd marking JD JD smd RAS 0910 g23 SMD Transistor marking g23 SMD SMJ44400 jdm 11
Contextual Info: DRAM SMJ44400 Austin Semiconductor, Inc. 1M x 4 DRAM PIN ASSIGNMENT Top View DYNAMIC RANDOM-ACCESS MEMORY 20-Pin DIP (JD) 20-Pin Flatpack (HR) (400 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-90847 • MIL-STD-883 DQ1 DQ2 W\ RAS\ A9 A0 A1 A2 A3