SM 678 N Search Results

B0680

Abstract: bd 682 0477A2 her32 bd676 Bd 676/BD 675 BD677 BD 678 BD680 BD681
Contextual Info: BD 676 'BD 678 -BD 680 -BD 682 'W Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: Features: • Sehr hohe Stromverstärkung • Very high current transfer ratio

G50Q2YS40

Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Contextual Info: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101

Contextual Info: SGS-THOMSON MDO^miera «! BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

Contextual Info: FQU5N40 N-Channel QFET MOSFET 400 V, 3.4 A, 1.6 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

Contextual Info:
 N-Channel QFET MOSFET 400 V, 30 A, 140 mΩ Description   This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

XC084

Abstract: CXC574 3122-X CXC190
Contextual Info: Fast Recovery D iodes ~ C a p s u le types Type ^RRM I f A V ^ F(RM S) Range @ T hs 55°C @ T.hs 25°C IF Typical Reverse Recovered Charge @ T hs25°C and Typical Reverse Recovery @ Tj Max. 10ms (50% Chord) V r« 6 0 % ^FSM (1) ^RRM (Note 3) (V) di/dt (Note 2)

Valor

Abstract: SM75176E SM75176EL ST5116 YYW7517
Contextual Info: NT IA PL M Applications • VALOR ST5116 equivalent ■ Telecom CO ■ Surface mount, dual transformer for S oH *R Features transmit and receive SM YYW7517 W 6L ■ 1500 VAC HIPOT ■ RoHS compliant* SM75176L - T1/CEPT/ISDN-PRI Transformer Electrical Specifications @ 25 °C

F799

Abstract: NL JH CHN 648 CHN 649
Contextual Info: 642+, >@097:7/?@=3 >75:/8 =38/C 4HERSPHQ Y M[r48B mqcn]bcha ][j[\cfcns Y Icab m_hmcncp_@ 7;6gW Y 7 Gilg D ]ih`caol[ncih Gcf_ Ni4@F799:>7 Y W[mb ncabn nsj_ [p[cf[\f_ Y Fhpclihg_hn[f `lc_h^fs jli^o]n /RiIS ]igjfc[hn0 Y Oonfch_ Ecg_hmcihm@ /784; r =4; r 76460 gg

Contextual Info: Tem ic SMD10P06 Siliconix P-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) r DS(on) (Q ) IDa (A) -6 0 0.28 -1 0 S Q DPAK (TO-252) D n°n G S Ô D Top View P-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

Contextual Info: BD675, BD675A, BD677, BD677A BD679, BD679A, BD681 BD675, 675A, 677, 677A, 679, 679A, 681 NPN PLASTIC POWER TRANSISTORS, Medium Power Darlingtons Complementary BD676, 676A, 678, 678A, 680, 680A, 682 PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN.

MSG100L41

Abstract: TSS1G41 SF5B42 SM6G14 TSS2G41 1J44 1J-44 TSS25J47S TSS2J2A44S f0r3g
Contextual Info: •A L P H A N U M E R IC A L IN D E X # Type No. CU16J6S3 CU16L6A3 CU16Q6S3 CU30J6S3 CU30L6A3 CU30Q6S3 CU50J6S3 CU50L6A3 CU50Q6S3 CU80J6S3 CU80L6A3 CU80Q6S3 CU80U6A3 CU150J6S3 CU150L6A3 CU150Q6S3 CU150U6A3 CU300J6S3 CU300F6A3 CU300Q6S3 CU300U6A3 MSA60G41

Y766

Contextual Info: 64,-42 97:7/?@=3 <;B3= =38/D 4IESTQIR [ [ [ [ [ [ [ [ [ [ Hcf_ Oi4 @ G799:>7 A 2 3 Hcf_ Oi4 @ :6699<: Hcf_ Oi4 @ S;67:?99: Hcf_ Oi4@ERE766686:?7<8 1;:?/1? 2/?/ Eihn[]n [ll[ha_g_hn 1;78 7C Oi aif^ jf[n_^@ 766g g[r4 Iif^ jf[n_^@ ;6g g[r4 Eihn[]n S_mcmn[h]_

CHN 749

Contextual Info: ;=-6474,<=:0 47<0:60/4,<0 3423 <0690:,<=:0 98?0: :05,A 31*~1,{< 1EBOPMEN \ \ \ \ \ \ \ \ \ \ Hcf_ Oi4@G79:;7= > / 0 Hcf_ Oi4@:666<7>8 Hcf_ Oi4@ERE6?66868><>? .87<,.< /,<, .845 Eihn[]n [ll[ha_g_hn 7C Eihn[]n l_mcmn[h]_ CaOc ;C 8;6WCE ;C 96WFE Eihn[]n l[ncha

10M80

Abstract: 10M15 10ELS4 10EF2 10ELS1 10ELS2 10ELS6 10KF10 10KF10B 10KF20
Contextual Info: - 38- A m 1& £ [Si # is m & æ |SJ # tt * ffi £ £ Vr sm Vr r m Vr IFH Tfc# V (V) (V) (A) (°C) I o,I f * (A) CC> IFSM T & f * Vpmax (A) (°C) (V) «DJîËfctt I f (A) TTC) Igmax * fife ^ ffi (ü A) V r (V) T(°C) 10EF2 ÎOELSI 10ELS2 10ELS4 10ELS6

10M15

Abstract: 10EF2 1S783 10MA80 10ELS1 10ELS2 10ELS4 10ELS6 10KF10 10KF10B
Contextual Info: - 38 - A m 1& £ [Si # is m & æ |SJ # tt * ffi £ £ Vr sm Vr r m Vr IFH Tfc# V (V) (V) (A) (°C) I o,I f * (A) CC> IFSM T & f * Vpmax (A) (°C) (V) «DJîËfctt I f (A) TTC) Igmax * fife ^ ffi (ü A) V r (V) T(°C) 10EF2 ÎOELSI 10ELS2 10ELS4 10ELS6

10M80

Abstract: 10MA80 10M60 10M40 10M15 10EF2 1s785 10V-200 10ELS2 10ELS4
Contextual Info: - 38- A m 1& £ [Si # is m & æ |SJ # tt * ffi £ £ Vr sm Vr r m Vr IFH Tfc# V (V) (V) (A) (°C) I o,I f * (A) CC> IFSM T & f * Vpmax (A) (°C) (V) «DJîËfctt I f (A) TTC) Igmax * fife ^ ffi (ü A) V r (V) T(°C) 10EF2 ÎOELSI 10ELS2 10ELS4 10ELS6

10M15

Abstract: 10EF2 10ELS1 10ELS2 10ELS4 10ELS6 10KF10 10KF10B 10KF20 10KF20B
Contextual Info: - 38 - A m 1& £ [Si # is m & æ |SJ # tt * ffi £ £ Vr sm Vr r m Vr IFH Tfc# V (V) (V) (A) (°C) I o,I f * (A) CC> IFSM T & f * Vpmax (A) (°C) (V) «DJîËfctt I f (A) TTC) Igmax * fife ^ ffi (ü A) V r (V) T(°C) 10EF2 ÎOELSI 10ELS2 10ELS4 10ELS6

10M15

Abstract: 10EF2 10ELS1 10ELS2 10ELS4 10ELS6 10KF10 10KF10B 10KF20 10KF20B
Contextual Info: - 38 - A m 1& £ [Si # is m & æ |SJ # tt * ffi £ £ Vr sm Vr r m Vr IFH Tfc# V (V) (V) (A) (°C) I o,I f * (A) CC> IFSM T & f * Vpmax (A) (°C) (V) «DJîËfctt I f (A) TTC) Igmax * fife ^ ffi (ü A) V r (V) T(°C) 10EF2 ÎOELSI 10ELS2 10ELS4 10ELS6

SANYO SS 1001

Abstract: 2SK1069 2SK771 la 1001 sanyo d 2046 K 2058 transistor
Contextual Info: SANYO S E M I C O N D U C T O R CORP 22E D • 7 ^^7 □7 h 0DD74ES 2SK1069 4 T -2 9 - Z 5 N -C h a n n e l J u n c tio n S ilic o n FET 2058 Low-Frequency General-Purpose Amp Applications A p p lic a tio n s • Low-frequency general-purpose am plifiers • Ideal for use in variable resistors, analog sw itches, low-frequency am plifiers, and co n stan t-cu rren t

Contextual Info: 0.|.~ 8:*3141~9:7- 01/0 65<-7 7-2~> .C@MNKCL W W W W W W Gcf_ Ni4@ F79:;7= ; , - Gcf_ Ni4@ :6689=6> W UL chmof[ncih msmn_g@ Df[mm G W Fhpclihg_hn[f `lc_h^fs jli^o]n /RiIS ]igjfc[hn0 W Oonfch_ Ecg_hmcihm@ /7?46 r 7;4; r 7;4;0 gg Gcf_ Ni4@DQD786686=<;8? +512

Contextual Info: 53+,3 =?/8696.>?<2 69>2<8216.>2 ;:A2< <27.C 3HESTQHR Hcf_ Oi4@G79:;7= \ 76C mqcn]bcha ][j[\cfcns \ UW3; 78;WCE [jjlip_^ \s VM mn[h^[l^ /ihfs `il 7 Hilg C0 Hcf_ Oi4@S;68=>;?7 \ Qf[mnc] m_[f_^ [h^ `for jlii`_^ nsj_m [p[cf[\f_ \ 7 Hilg C [h^ 7 Hilg E ]ih`caol[ncihm

CHN 747

Abstract: MOCN CHN 648
Contextual Info: 86./64 ;9<91AB?5 >=D5? ?5:1F 6KGWXUKV _ _ _ _ _ _ _ _ _ _ Hcf_ Oi4 @ G799:>7 C 4 5 Hcf_ Oi4 @ :6699<: Hcf_ Oi4 @ S;67:?99: Hcf_ Oi4@ERE766686:?7<8 3=<A13A 41A1 3=9: Eihn[]n [ll[ha_g_hn 7C Oi aif^ jf[n_^@ 766g g[r4 Iif^ jf[n_^@ ;6g g[r4 Eihn[]n S_mcmn[h]_

2N6178

Abstract: 2N6180 2N6181 b0244c npn darlington 400v 15a 2N2102 2N3879 2N4036 2N5320 2N5322
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053

CHN 846

Abstract: CHN 64 946 CHN 749 CHN 649 CHN 848 DRD68667667 KRY377 IL 78 F 05 CHN 748
Contextual Info: 53*,3~6 /KRY377;G3J0 8696.>?<2 5645 ;:A2< <27.B 3FCPQNFO W W W W W W W W W W Gcf_ Oi4@F79:;7= Gcf_ Oi4@77<?9: Gcf_ Oi4@DRD68667667?;7 0:9>.0> 1.>. 0:67 Dihn[]n [ll[ha_g_hn 7B Dihn[]n l_mcmn[h]_ 766g /[n 7B <WED0 Dihn[]n g[n_lc[f BaThP82 BaThP8Jh8P9 7<B 8;6WBD