SM 678 N Search Results

B0680

Abstract: bd 682 0477A2 her32 bd676 Bd 676/BD 675 BD677 BD 678 BD680 BD681
Contextual Info: BD 676 'BD 678 -BD 680 -BD 682 'W Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: Features: • Sehr hohe Stromverstärkung • Very high current transfer ratio

G50Q2YS40

Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Contextual Info: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101

Contextual Info: SGS-THOMSON MDO^miera «! BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

FQPF5N70

Contextual Info: FQPF5N40 N-Channel QFET MOSFET 400 V, 3.0 A, 1.6 Ω Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

d 434 mosfet

Abstract: FQU5N40
Contextual Info: March 2013 N-Channel QFET MOSFET 400 V, 3.4 A, 1.6 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

AT-60500

Abstract: AT-01635 AT-21400 AT21400 AT-60586
Contextual Info: Silicon Bipolar Transistors Low Noise Transistors Typical Specifications at +25°C Case Temperature Part Number Test Freq. (GHz) NF0 (dB) PldB (dBm) I 21eI2 @ 1.0 GHz (dB) Max. Usable Freq.M (GHz) w* (GHz) AT-41400 AT-60100 AT-60200 AT-60500 2.0 2.0 2.0

FQA30N40

Contextual Info:
 N-Channel QFET MOSFET 400 V, 30 A, 140 mΩ Description   This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Contextual Info: July 2013 N-Channel QFET MOSFET 400 V, 3.4 A, 1.6 Ω Description Features • 3.4 A, 400 V, RDS on =1.6 Ω(Max.)@VGS=10 V, ID=1.7 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced

Contextual Info: June 2013 N-Channel QFET MOSFET 400 V, 3.4 A, 1.6 Ω Description Features • 3.4 A, 400 V, RDS on =1.6 Ω(Max.)@VGS=10 V, ID=1.7 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced

Contextual Info: I _ a_ File No. 678 zn: _LZi_ SHEET 15.00 SPECIFICATION Current Rating:0.5A Voltage Rating:40V Dielectric Withstanding Voltage:300V AC/M inute Contact Resistance:30 Milliohms Max. Operation Tem perature:—20"C~+ 85'C Storage Tem perature:—20'C ~ + 65‘ C

Contextual Info: FQU5N40 N-Channel QFET MOSFET 400 V, 3.4 A, 1.6 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

Contextual Info:
 N-Channel QFET MOSFET 400 V, 30 A, 140 mΩ Description   This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Y7G3

Abstract: ne 555E 1a10aa Z441 z523 d6876 mjop d266c kD 242
Contextual Info: 2M 9 9  62$2/ /#/ j44 56789:6;68<=4874klm j44 nbB]ogapme j44 >JC:<=4G8<=oB8B=C5@7Q j44 dbHbbbHbbb48G=7@5J8C>4<J?=45JB= j44 qr`s4>=@<JC: j44 5=BG=7@597=47@C:=t <8F45=BGt4;abocddnue 6J:645=BGt4;abocd`bue  ! "#$%!&'$ $!)*

XcxxX

Abstract: sm1628c sM1628 sm4045 SM40-45CXC374 SM04-16CXC190 SM14-21CXC224 SM1628CXC144 SM1421 SM*HXC166
Contextual Info: Fast Recovery Diodes - Capsule Types Product une of WISTCODi A n O IX Y S Com pany Type Vrb« ^FAV @TS=55°C V ^F RMS max @TS=25°C Typ.Fieverse Recovery charge &Tyf . Reverse Recoviïrytime 10ms Tj Max (50% Cho rd) VR<60%Vrhm A A Qra uC trr Vf at lF ^FSM

ST5116

Abstract: SM75176E SM75176EL YYW7517
Contextual Info: PL IA NT CO M *R oH S Features Applications • VALOR ST5116 equivalent ■ Telecom ■ Surface mount, dual transformer for transmit and receive SM YYW7517 W 6L ■ 1500 VAC HIPOT ■ RoHS compliant* SM75176L - T1/CEPT/ISDN-PRI Transformer Electrical Specifications @ 25 °C

Valor

Abstract: SM75176E SM75176EL ST5116 YYW7517
Contextual Info: NT IA PL M Applications • VALOR ST5116 equivalent ■ Telecom CO ■ Surface mount, dual transformer for S oH *R Features transmit and receive SM YYW7517 W 6L ■ 1500 VAC HIPOT ■ RoHS compliant* SM75176L - T1/CEPT/ISDN-PRI Transformer Electrical Specifications @ 25 °C

ADE08SB04

Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T 1825058 BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S 1825058 , 1825058 RESERVED. C O R P O R A T IO N . D C 1.30 1.40 [.0 5 5 ] TYP H 2.54 100 [. TYP A

Contextual Info: PL IA N T Features M • VALOR ST5116 equivalent ■ Surface mount, dual transformer for CO *R oH S This series is currently available, but not recommended for new designs. transmit and receive SM YYW7517 W 6L ■ 1500 VAC HIPOT ■ RoHS compliant* Applications

Contextual Info: SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 349 ^ D S on 100 V 32 A 0.06 n Maximum Ratings Parameter Continuous drain current, Tc = 27 "C Pulsed drain current, Tc = 25 "C Avalanche current, limited by 7]max

68230A

Abstract: pal16v8q PAL16R8ACN 99029 PAL16V8Q-15JC4 PAL16V8Z AM993 17640 8253 amd thermal analysis on pcb
Contextual Info: 9/5/01 PKG. TYPE CD 016 PD 016 PD 016 CD 020 CD 020 CD 020 CD 020 CD 020 PD 020 PD 020 Page 1 Thermal Resistance Analysis Update LD. FRM. NUMBER 18543 405 563 461 480 480 480 18550 590 590 X PAD DIM. MILS 167 140 150 127 160 160 160 167 150 150 MSD Advanced Assembly Technology

ADF08SATTR04

Abstract: adf04s04 ADF03SAT04 ADF08ST04 ADF03STR04
Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL C O P Y R IG H T 1825059 BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S 1825059 , 1825059 RESERVED. C O R P O R A T IO N . D C H 2.54 [.1 0 0 ] TYP A AMP 1471-9 REV 31MAR2000

F799

Abstract: NL JH CHN 648 CHN 649
Contextual Info: 642+, >@097:7/?@=3 >75:/8 =38/C 4HERSPHQ Y M[r48B mqcn]bcha ][j[\cfcns Y Icab m_hmcncp_@ 7;6gW Y 7 Gilg D ]ih`caol[ncih Gcf_ Ni4@F799:>7 Y W[mb ncabn nsj_ [p[cf[\f_ Y Fhpclihg_hn[f `lc_h^fs jli^o]n /RiIS ]igjfc[hn0 Y Oonfch_ Ecg_hmcihm@ /784; r =4; r 76460 gg

Contextual Info: *t 7 SCS-THOMSON SMBYW 02 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES T E N T A T IV E D A T A • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SW ITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ LOW THERM AL RESISTANCE S U IT A B L E A P P L IC A T IO N S

Contextual Info: Tem ic SMD10P06 Siliconix P-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) r DS(on) (Q ) IDa (A) -6 0 0.28 -1 0 S Q DPAK (TO-252) D n°n G S Ô D Top View P-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)