SKB02N120 Search Results
SKB02N120 Datasheets (3)
Infineon Technologies
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SKB02N120 |
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2A 1200V TO263AB SMD IGBT+Diode | Original | 398.3KB | 13 | ||
| SKB02N120 |
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Fast IGBT in NPT-Technology with Soft, Fast Recovery Anti-Parallel EmCon Diode | Original | 409.62KB | 13 | ||
| SKB02N120ATMA1 |
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Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 6.2A 62W TO263-3-2 | Original | 612.71KB |
SKB02N120 Price and Stock
Infineon Technologies AG
Infineon Technologies AG SKB02N120FAST IGBT IN NPT-TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMCON DIODE Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-263AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SKB02N120 | 855 |
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Get Quote | |||||||
Infineon Technologies AG SKB02N120ATMA1Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-263AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SKB02N120ATMA1 | 5,793 |
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Get Quote | |||||||