K02N12 Search Results

K02N12 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K02N120 Abstract: fast recovery diode 1a trr 200ns Contextual Info: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for:	Original	skb02n120 p-to-220-3-45 k02n120 fast recovery diode 1a trr 200ns	PDF
K02N120 Abstract: k02n12 SKP02N120 Contextual Info: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs	Original	skp02n120 40lower pg-to-220-3-1 o-220ab +2k02n120 k02n12	PDF
K02N120 Contextual Info: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation  Short circuit withstand time – 10 s	Original	skb02n120 pg-to-263-3-2 k02n120	PDF
K02N120 Contextual Info: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs	Original	skb02n120 40lower p-to-263-3-2 o-263ab +1k02n120	PDF
k02n120 Abstract: 15v 60w smps smps 10w 5V PG-TO-220-3-1 SKP02N120 fast recovery diode 2a trr 200ns Contextual Info: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs	Original	skp02n120 40lower pg-to-220-3-1 o-220ab +4k02n120 15v 60w smps smps 10w 5v fast recovery diode 2a trr 200ns	PDF
K02N120 Abstract: fast recovery diode 2a trr 200ns Contextual Info: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs	Original	skp02n120 40lower pg-to-220-3-1 o-220ab +2k02n120 fast recovery diode 2a trr 200ns	PDF
1200V Abstract: P-TO220-3-45 K02N120 Contextual Info: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for:	Original	skb02n120 p-to-220-3-45 1200v p-to220-3-45 +1k02n120	PDF
k02n120 Abstract: PG-TO-263-3-2 SKB02N120 k02n12 Contextual Info: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,	Original	skb02n120 pg-to-263-3-2 k02n120 k02n12	PDF
K02N120 Contextual Info: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs	Original	skp02n120 40lower pg-to-220-3-1 o-220ab +1k02n120	PDF
Contextual Info: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation  Short circuit withstand time – 10 s	Original	skp02n120 40lower pg-to-220-3-1 o-220ab	PDF