SIR882A Search Results

SIR882A Datasheets (1)

Filter by Manufacturer

Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIR882ADP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 60A POWERPAK	Original	PDF		9

SIR882A Price and Stock

Filter by Manufacturer

Select Manufacturer


Vishay Intertechnologies SIR882ADP-T1-GE3 - Product that comes on tape, but is not reeled (Alt: 19X1954)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas ()	SIR882ADP-T1-GE3	Ammo Pack			1	1 $3.83 10 $3.83 100 $1.94 1000 $1.64 10000 $1.59	Get Quote
	SIR882ADP-T1-GE3	Tape & Reel		52 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $1.01	Buy Now
Mouser Electronics	SIR882ADP-T1-GE3		124			1 $3.50 10 $2.28 100 $1.60 1000 $1.27 10000 $1.18	Buy Now
Newark ()	SIR882ADP-T1-GE3	Tape & Reel	353		100	1 - 10 - 100 $1.94 1000 $1.64 10000 $1.54	Buy Now
	SIR882ADP-T1-GE3	Cut Tape	353		1	1 $3.83 10 $3.83 100 $1.94 1000 $1.64 10000 $1.54	Buy Now
	SIR882ADP-T1-GE3	Cut Tape			3,000	1 - 10 - 100 - 1000 - 10000 $1.66	Buy Now
	SIR882ADP-T1-GE3	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 $1.11	Buy Now
TTI ()	SIR882ADP-T1-GE3	Cut Tape	2,230		10	1 - 10 $3.50 100 $3.50 1000 $3.50 10000 $3.50	Buy Now
	SIR882ADP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $1.18	Buy Now
TME	SIR882ADP-T1-GE3				1	1 $3.21 10 $1.76 100 $1.42 1000 $1.13 10000 $1.08	Get Quote

Avnet Asia	SIR882ADP-T1-GE3			54 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SIR882ADP-T1-GE3			53 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Huntington SIR882ADP-T1-GE3 MOSFET N-CH 100V 60A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	SIR882ADP-T1-GE3		68,181			1 - 10 - 100 $1.13 1000 $0.94 10000 $0.94	Buy Now

SIR882A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
sir882a Contextual Info: SPICE Device Model SiR882ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	sir882adp 11-mar-11 sir882a	PDF
Contextual Info: SPICE Device Model SiR882ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	sir882adp 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC	Original	sir882adp 2002/95/ec sir882adp-t1-ge3 2011/65/eu +2js709a 02-oct-12	PDF
SiR882ADP Contextual Info: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC	Original	sir882adp 2002/95/ec sir882adp-t1-ge3 11-mar-11	PDF
SiR882ADP Abstract: MV 1662 Contextual Info: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC	Original	sir882adp 2002/95/ec sir882adp-t1-ge3 11-mar-11 +1mv 1662	PDF
Contextual Info: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 VDS (V) 100 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC	Original	sir882adp 2002/95/ec sir882adp-t1-ge3 2011/65/eu +112-mar-12	PDF
Contextual Info: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC	Original	sir882adp 2002/95/ec sir882adp-t1-ge3 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC	Original	sir882adp 2002/95/ec sir882adp-t1-ge3 2011/65/eu +112-mar-12	PDF
sir882adp Contextual Info: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC	Original	sir882adp 2002/95/ec sir882adp-t1-ge3 2011/65/eu +2js709a 02-oct-12	PDF
so8 footprint Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419 Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs KEY BENEFITS • New next-generation technology provides very low on-resistance and ultra-low figure of merit	Original	sc-70 sc-75 si7252dp vmn-pt0261-1209 +9so8 footprint sir876 si7454 si409 sir872adp sir878 sis890dn si7252 si419	PDF
Contextual Info: designfeature SANJAY HAVANUR, Senior Manager, System Applications Vishay Siliconix, Santa Clara, CA Optimum Dead Time Selection in ZVS Topologies Insufficient dead time during turn off can result in the loss of ZVS, poor efficiency, and in the worst case, failure of the	Original	sir882adp	PDF
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit	Original	sc-75 sib456dk si7252dp sis990dn +3si4590dy 1212-8s vmn-pt0261-1402	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF
Contextual Info: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN845 Matching System Dead Time to MOSFET Parameters in ZVS Circuits by Sanjay Havanur Medium- and high-voltage power MOSFETs are used in a variety of isolated converter topologies, such as half- or full-bridges	Original	an845 06-oct-14	PDF