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defect ppm sampling

Abstract: signetics
Contextual Info: Signetics Quality and Reliability Military Products SIGNETICS MILITARY PRODUCT QUALITY SIGNETICS SHIP-TO-STOCK STS PROGRAM Signetics Quality leadership begins with the In­ dustry's firstzerodefect warranty. If a single de­ fect is found in any lot that we ship, the entire lot

defect ppm sampling

Contextual Info: Signetics Quality and Reliability Military Products SIG N ETICS MILITARY PRODUCT QUALITY SIG N ETICS SHIP-TO-STOCK STS PROGRAM Signetics Quality leadership begins with the In­ dustry's first zero defect warranty. If a single de­ fect is found in any lot that we ship, the entire lot

IBM0364404CT3

Contextual Info: Discontinued 8/99 - last order; 12/99 - last ship IBM0364404 IBM03644B4 PC133 Synchronous DRAM - 64Mb Revision B Features • Programmable Wrap: Sequential or Interleave • High Performance: -75A, CL=3 Units • Multiple Burst Read with Single Write Option

8mx32 simm 72 pin

Abstract: 32MB SIMM
Contextual Info: Discontinuted 9/98 - last order; 3/99 last ship IBM11D4320B4M x 3211/11, 5.0V, Sn/PbMMDS13DSU-011041020. IBM11D8320B8M x 3211/11, 5.0V, Sn/PbMMDS13DSU-011041020. IBM11D4320B IBM11D8320B 4M/8M x 32 DRAM Module Features • 72-Pin JEDEC Standard Single-In-Line

IBM0164405B16M

Abstract: IBM0164405BJ3D-50 IBM0164405BJ3D-60 IBM0164405P16M TSOP-32
Contextual Info: Discontinued 12/98 - last order; 3/99 last ship IBM0164405B16M x 413/11, 3.3V, EDO. IBM0164405P16M x 413/11, 3.3V, LP, SR, EDO. IBM0164405B IBM0164405P 16M x 4 13/11 EDO DRAM Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply

IBM0316809CT3D80

Abstract: IBM0316169C IBM0316809C
Contextual Info: Discontinued 12/98 - last order; 9/99 last ship . IBM0316409C IBM0316809C IBM0316169C IBM03164B9C 16Mb Synchronous DRAM-Die Revision D Features • Multiple Burst Read with Single Write Option • High Performance: -80 CL=3 -360 CL=3 -10 CL=3 Units 125 100

IBM0164405B16M

Abstract: IBM0164405P16M GA15 514300
Contextual Info: Discontinued 8/98 - last order; 12/98 last ship IBM0164405B16M x 413/11, 3.3V, EDO. IBM0164405P16M x 413/11, 3.3V, LP, SR, EDO. IBM01644F5B 16M x 8 13/11 Stacked DRAM Features • 16,777,216 word by 4 bit organization by 2 high • Single 3.3 ± 0.3V power supply

Contextual Info: Discontinuted 9/98 - last order; 3/99 last ship IBM11D8320B8M x 3211/11, 5.0V, Sn/Pb. IBM11E8320B8M x 3211/11, 5.0V, Au. IBM11D4325B IBM11D8325B 4M/8M x 32 DRAM Module Features • 72-Pin JEDEC Standard Single-In-Line Memory Module • Performance: -60 -70

Contextual Info: Discontinued 7/00 - last order; 9/00 - last ship IBM11D4480BA4M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E4480BA4M x 36 EOS11/11, 5.0V, Au. IBM11D4480BG IBM11E4480BG 4M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance:

IBM11D2320LD-60

Contextual Info: Discontinuted 9/98 - last order; 3/99 last ship IBM11D2320BD2M x 3210/10, 5.0V, Sn/Pb. IBM11E2320BD2M x 3210/10, 5.0V, Au. IBM11D1320L IBM11D2320L 1M/2M x 32 DRAM Module Features • 72-Pin JEDEC Standard Single-In-Line Memory Module • Performance: -60

IBM0165805B8M

Abstract: IBM0165805BJ3D-50 IBM0165805BJ3D-60 IBM0165805P8M TSOP-32
Contextual Info: Discontinued 12/98 - last order; 3/99 last ship IBM0165805B8M x 812/11, 3.3V, EDO. IBM0165805P8M x 812/11, 3.3V, LP, SR, EDO. IBM0165805B IBM0165805P 8M x 8 12/11 EDO DRAM Features • 8,388,608 word by 8 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply

4253-01

Abstract: IBM0165405B16M IBM0165405BJ3D-50 IBM0165405BJ3D-60 IBM0165405P16M TSOP-32
Contextual Info: Discontinued 12/98 - last order; 3/99 last ship IBM0165405B16M x 412/12, 3.3V, EDO. IBM0165405P16M x 412/12, 3.3V, LP, SR, EDO. IBM0165405B IBM0165405P 16M x 4 12/12 EDO DRAM Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply

8m x 36

Contextual Info: Discontinued 7/00 - last order; 9/00 - last ship IBM11D8480BA8M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E8480BA8M x 36 EOS11/11, 5.0V, Au. IBM11D8480BG IBM11E8480BG 8M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance:

IBM0164165B4M

Abstract: IBM0164165P4M TSOP50
Contextual Info: Discontinued 8/98 - last order; 12/98 last ship IBM0164165B4M x 1613/9, 3.3V, EDO. IBM0164165P4M x 1613/9, 3.3V, LP, SR, EDO. IBM0164165B IBM0164165P 4M x 16 13/9 EDO DRAM Features • 4,194,304 word by 16 bit organization • Dual CAS Byte Read/Write • Single 3.3 ± 0.3V power supply

1D1320

Abstract: 1D1320LD-70J
Contextual Info: Discenti muted 9/98 » Iasi order; 3/99 last ship IBM11D1320L IBM11D2320L 1M/2M x 32 DRAM Module Features • 72-Pin JEDEC Standard Single-ln-Line Memory Module • Performance: ! -60 i -70 I i t:;Ac j RAS Access Tim e I 60ns I 70ns I i tcAC j CAS Access Tim e

IBM0165165B

Abstract: IBM0165165P4M IBM0165165B4M 88H2011
Contextual Info: Discontinued 8/98 - last order; 12/98 last ship IBM0165165B4M x 1612/10, 3.3V, EDO. IBM0165165P4M x 1612/10, 3.3V, LP, SR, EDO. IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM Features • 4,194,304 word by 16 bit organization • Dual CAS Byte Read/Write

F373

Abstract: MC74FXXXDW
Contextual Info: OCTAL TRANSPARENT LATCH WITH 3-STATE OUTPUTS The MC54/74F373 consists of eight latches with 3-state outputs for bus organized system applications. The flip-flops appear transparent to the data when Latch Enable LE is HIGH. When LE is LOW, the data that meets the

74F533

Abstract: F373 MC54 MC74FXXXDW
Contextual Info: OCTAL TRANSPARENT LATCH WITH 3-STATE OUTPUTS The MC54 / 74F533 consists of eight latches with 3-state outputs for bus organized system applications.The flip-flops appear transparent to the data when Latch Enable LE is HIGH. When LE is LOW, the data that meets the

Contextual Info: OCTAL TRANSPARENT LATCH WITH 3-STATE OUTPUTS The MC54 / 74F533 consists of eight latches with 3-state outputs for bus organized system applications.The flip-flops appear transparent to the data when Latch Enable LE is HIGH. When LE is LOW, the data that meets the

"Content Addressable Memory"

Abstract: MCM69D536 MCM63R736 MCM63R818 MCM63R836 MCM63R918 motorola cmos scm
Contextual Info: SG171/D REV 30, 10/16/00 Motorola Networking Memory Operation NMO Ultra Fast Category Organizations VDD Device No. Pin count Packages Speed Prod. Satus 8M 512K x 18 3.3 V MCM63R918 119 (FC) PBGA 3.0/3.3/3.7/4.0 Now Not recommended for new design. Use MCM63R918A.

SG171

Abstract: motorola cmos scm motorola memory scm MCM69D536 MCM63R736 MCM63R818 MCM63R836 MCM63R918 motorola cmos time base MOTOROLA 2N
Contextual Info: Freescale Semiconductor, Inc. SG171/D REV 30, 10/16/00 Motorola Networking Memory Operation NMO Ultra Fast Category Organizations VDD Device No. Pin count Packages Speed Prod. Satus 8M 512K x 18 3.3 V MCM63R918 119 (FC) PBGA 3.0/3.3/3.7/4.0 Now Not recommended for new design. Use

IBM03641644M

Abstract: IBM036440416M IBM03644B432M IBM03648048M
Contextual Info: Discontinued 8/99 - last order; 12/99 - last ship IBM036440416M x 412/10/2, 3.3V 72. IBM03644B432M x 412/10/2, 3.3V 72. IBM03641644M x 1612/8/2, 3.3V 72. IBM03648048M x 412/9/2, 3.3V 72. IBM0364804 IBM0364164 IBM0364404 IBM03644B4 64Mb Synchronous DRAM - Die Revision B

IC 4804

Contextual Info: FEATURES • Single +5V Power Supply ■ 1Kx4 Organization ■ Replaces 41024x1 Static RAMs ■ Completely Static—No Clocks or Refresh ■ 18 Pin Package ■ Access/Cycle Times As Low As 400 nsec max ■ 250 mw Typical Operating Power ■ Common I/O Bus

4804B

Abstract: 4804 4804BCC semi 4804 4804a c 4804a TCO 706 1N3064 EMM Semi
Contextual Info: GENERAL DESCRIPTION FEATURES • Single +5V Power Supply ■ 1Kx4 Organization ■ Replaces 41024x1 Static RAMs ■ Completely Static—No Clocks or Refresh ■ 18 Pin Package ■ Access/Cycle Times As Low As 400 nsec max ■ 250 mw Typical Operating Power