GA15 Search Results

GA150TD120K

Abstract: IC171 termal control RG115
Contextual Info: PRELIMINARY GA150TD120K ]HALF-BRODGE” IGBT DOUBLE INT-A -PAK Short Circuit Rated Ultra-FastTM Speed IGBT Features • • VCES=1200V Generation 5 IGBT NPT technology

ic 5056 mv 85

Abstract: GA150TS60U
Contextual Info: PD -5.056 PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA150TS60U Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

GA150KS61U

Abstract: ge 142
Contextual Info: PD -94346 GA150KS61U Low Side Switch Chopper Module Ultra-FastTM Speed IGBT IGBT INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

irf 44 n

Contextual Info: GA150TD120U Notes:  Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ‚ See fig. 17 ƒ For screws M5x0.8 „ Pulse width 80µs; single shot. Case Outline — DOUBLE INT-A-PAK Dimensions are shown in millimeters inches WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

LM 1709

Abstract: GA150TD120U DT12-6
Contextual Info: PD -5.067 PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200 V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses

IQR 336

Abstract: 5056B IOR 336
Contextual Info: International IQR Rectifier "HALF-BRIDGE" IGBT INT-A-PAK PD - 5.056B GA150TS60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology VcES = 600V • UltraFast: Optimized for high operating frequencies 8-40kHz in hard switching, >200kHz in resonant mode

GA150TS60U

Contextual Info: PD -50056C GA150TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: International I R Recti fi Gf PD - 5.067A PR ELIM IN A R Y GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features V • G e n e ratio n 4 IG B T technology ces = 1200V • S tand ard : O p tim ize d for m inim um saturation v o lta g e and o perating freq u en cies up to 1 0 k H z

RG2 DIODE

Abstract: GA150TD120U DT12-6
Contextual Info: PD - 5.067A PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses

Contextual Info: International I R Rectifier PD -5.067 PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features V c e s = 1200V • Generation 4 IG B T technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kH z

C82 diode

Abstract: C81 diode
Contextual Info: International IOR Rectifier PD - 5.067A GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V CES= 1200V • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz

Contextual Info: HIGH REPEATABILITY ULTRAMINIATURE BROADBAND ATTENUATOR RELAYS SERIES DESIGNATION RELAY TYPE GA152 Attenuator relay series SERIES GA152 DESCRIPTION The Series GA152 highly repeatable ultraminiature attenuator relays are designed for attenuating RF signals in

ge 142

Abstract: lta 301 GA150TS60U
Contextual Info: PD - 50056D GA150TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

tc 317 c

Abstract: 056B GA150TS60U
Contextual Info: PD -5.056B PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA150TS60U Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

GA152

Abstract: A152-20-5 A152 TELEDYNE RELAYS esd
Contextual Info: HIGH REPEATABILITY ULTRAMINIATURE BROADBAND ATTENUATOR RELAYS SERIES DESIGNATION RELAY TYPE GA152 Attenuator relay series SERIES GA152 DESCRIPTION The Series GA152 highly repeatable ultraminiature attenuator relays are designed for attenuating RF signals in

Contextual Info: IBM13V25649AP IBM13V51649AN IBM13V25649AN IBM13V51649AP 256K/512K x 64 SGRAM SO DIMM Features 144 Pin Graphics JEDEC Standard, 8 Byte Synchro­ nous Small Outline Dual-In-line Memory Module Performance: Speed Grade 7R5 ! 10 ! Units I I Clock Frequency 133 ! 100 ! MHz

Contextual Info: IBM13V25649AN IBM13V51649AN 256K /512K x 64 S G R A M SO DIMM Features • 144 Pin Graphics JEDEC Standard, 8 Byte Syn­ chronous Small Outline Dual-In-line Memory Module • Performance: Speed Grade 7R5 j Clock Frequency 133 j Clock Cycle 7.5 j Clock Access Tim e

IRF 860

Abstract: 5056B IRF 150a
Contextual Info: , I ,• In ternational I I«R Rectifier PD -5.056B preliminary "HALF-BRIDGE" IGBT INT-A-PAK G A 150TS6 0 U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V ces = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

pal22V10D

Abstract: VMEbus Handbook VME P0 COnnector VIC068 TMS320 TMS320C40 VAC068 Cypress VMEbus Interface Handbook VIC068-VAC068 VAC068A disable
Contextual Info: Connecting the Cypress VIC068/VAC068 to the TI TMS320C40: A Prototype Design Introduction The Cypress Semiconductor VIC068 VMEbus Interface Controller and its companion VAC068 VMEbus Address Controller provide a complete VMEbus interface including master and slave capability Reference 2 . As these components can

data circuit schematics satellite connector

Abstract: 21D17 16D22 18D20 VMEbus Handbook 22D16 TMS320C40GFL VAC068 register TMS320C40 TIB82S105BC
Contextual Info: Prototyping the TI TMS320C40 to the Cypress VIC068/VAC068 Interface Application Report Peter F. Siy and David L. Merriman The MITRE Corporation Timothy V. Blanchard Cypress Semiconductor SPRA105 February 1994 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any

Contextual Info: In te r n a tio n a l IQ R R e c tifie r p d p re lim in a ry - s .o bza G A 1 5 0 T D 1 2 0 U "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Fe at ur es V • G en eratio n 4 IG BT te ch n o lo g y • S tan dard : O p tim ize d for m inim um saturation

DQ45-A

Abstract: 033J1
Contextual Info: IBM13N1649NC IBM13N1809NC 1M x 64/80 1 Bank Unbuffered SDRAM Module Features • 168-Pin JEDEC Standard, Unbuffered 8-Byte Dual In-Line Memory Module • 1Mx64/80 Synchronous DRAM DIMM • Performance: i. CAS Latency : fcK I Clock Frequency itcK i Clock Cycle

IBM0164405B16M

Abstract: IBM0164405P16M GA15 514300
Contextual Info: Discontinued 8/98 - last order; 12/98 last ship IBM0164405B16M x 413/11, 3.3V, EDO. IBM0164405P16M x 413/11, 3.3V, LP, SR, EDO. IBM01644F5B 16M x 8 13/11 Stacked DRAM Features • 16,777,216 word by 4 bit organization by 2 high • Single 3.3 ± 0.3V power supply

68HC11F1 bootloader

Abstract: 68HC11F1 expanded 68hc11f1 boot 68hc11f1 MC68HC11F1CPU4 IC stk 412 - 410 MC68HC11F1CFN3R2 Motorola 68HC11F1 ic stk 412 -420 68hc11e
Contextual Info: HC11 MC68HC11F1 Technical Data Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and