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Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IBM01644F5B 16M x 8 13/11 Stacked DRAM Features • 16,777,216 word by 4 bit organization by 2 high • Single 3.3 ± 0.3V power supply Max. Power Dissipation -50 - Active: 576mW - Standby (SP version): 4.0 mA • Extended Data Out (Hyper Page Mode) CAS before RAS Refresh |
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IBM01644F5B 576mW cycles/64ms | |
UT 16MContextual Info: IBM01644F5B 16M x 8 13/11 Stacked DRAM Features • 16,777,216 word by 4 bit organization by 2 high • Single 3.3 ± 0.3V power supply Max. Power Dissipation -50 - Active: 576mW - Standby (SP version): 4.0 mA • Extended Data Out (Hyper Page Mode) CAS before RAS Refresh |
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IBM01644F5B 576mW cycles/64ms TSQJ-32 825mil) UT 16M | |
Contextual Info: TOSHIBA TC5164 5 805AJ/AFT/AJS/AFTS-40,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,6O8-WORD X8-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)805AJ/AFT/AJS/AFTS is an EDO (hyper page) dynamic RAM organized as 8,388,608 |
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TC5164 805AJ/AFT/AJS/AFTS-40 805AJ/AFT/AJS/AFTS 32-pin | |
Contextual Info: Datasheet LED Driver with I2C Compatible and 3-wire Serial Interface for 8x16 LEDs in Dot Matrix BU16501KS2 Key Specifications Operating power supply voltage range: 2.7V to 5.5V Oscillator frequency: 1.2MHz Typ. Operating temperature range: |
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BU16501KS2 BU16501KS2 16-channel SQFP-T52M | |
HY51V65164Contextual Info: HY51V64164,HY51V65164 4Mx16, Extended Data Out mode 1st Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process |
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HY51V64164 HY51V65164 4Mx16, 16-bit 4Mx16 HY51V65164 | |
IBM0164405B16M
Abstract: IBM0164405P16M GA15 514300
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IBM0164405B16M IBM0164405P16M IBM01644F5B 576mW cycles/64ms GA15 514300 | |
Contextual Info: Datasheet LED Driver with I2C Compatible and 3-wire Serial Interface for 8x16 LEDs in Dot Matrix BU16501KS2 Key Specifications Operating power supply voltage range: 2.7V to 5.5V Oscillator frequency: 1.2MHz Typ. Operating temperature range: |
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BU16501KS2 BU16501KS2 16-channel SQFP-T52M | |
Contextual Info: -HYUNDAI HY51V18t60C,HY51V16160C 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this |
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HY51V18t60C HY51V16160C 1Mx16, 16-bit A0-A11) DQ0-DQ15) | |
ST7529
Abstract: ST7529-G st7529g lcm 041 display
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S128240D 128240D ST7529 ST7529-G st7529g lcm 041 display | |
DIP24NContextual Info: TOSHIBA TD62708N TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62708N 8CH HIGH CURRENT SOURCE DRIVER The TD62708N is comprised of eight source current output stages and ENABLE inputs which can gate the outputs. TD62708N features a large output source current of 1.8A |
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TD62708N TD62708N TD62593AP) SDIP24-P-300-1 DIP24N | |
Contextual Info: •HYUNDAI HY51V64160, HY51V65160 4Mx16, Fast Page mode 1st Generation DESCRIPTION This fam ily is a 64M bit dynam ic RAM organized 4,194,304 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access mem ory w ithin the same row. The circuit and process design allow |
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HY51V64160, HY51V65160 4Mx16, 16-bit 0-A12) 4Mx16 | |
HY51V18160CContextual Info: HY51V18160C,HY51V16160C 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this |
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HY51V18160C HY51V16160C 1Mx16, 16-bit 1Mx16 | |
Contextual Info: TOSHIBA TD62708N TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62708N 8CH HIGH CURRENT SOURCE DRIVER The TD62708N is comprised of eight source current output stages and ENABLE inputs which can gate the outputs. TD62708N features a large output source current of 1.8A |
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TD62708N TD62708N SDIP24-P-300-1 | |
Contextual Info: HY51V18164C,HY51V16164C 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process |
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HY51V18164C HY51V16164C 1Mx16, 16-bit 1Mx16 | |
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HY51V18164
Abstract: hy51v18164c
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HY51V18164C HY51V16164C 1Mx16, 16-bit 1Mx16 10/Sep HY51V18164 | |
Contextual Info: - H Y U N D A I « HY51V64164,HY51 V65164 4Mx16, Extended Data Out mode DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process |
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HY51V64164 V65164 4Mx16, 16-bit | |
HY51V18160C
Abstract: HY51V16160C
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HY51V18160C HY51V16160C 1Mx16, 16-bit 1Mx16 HY51V16160C | |
SOJ42
Abstract: bsl 100
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J2G0087-17-41 MSM51V18165B/BSL MSM51V18165B/BSL 576-Word 16-Bit MSM51V18165B/BSLCMOS1 42CMOS 42SOJ50/44TSOP 02416ms1 024128msSL SOJ42 bsl 100 | |
Contextual Info: HY51V18165B Series •HYUNDAI 1M X 16-bit CMOS DRAM with Burst EDO PRELIMINARY DESCRIPTION The HY51V18165B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V118165B utilized Hyundai's C M O S silicon gate process technology as well as advenced circuit techniques |
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HY51V18165B 16-bit 16-bit. HY51V118165B 1AD63-00-MAY95 HY51V18165BJC HY51V18165BTC | |
TNPCContextual Info: TOSHIBA TEN TATIVE TC5164 5 805AJ/AFT/AJS/AFTS-40,-50 TO SH IBA M OS DIGITAL IN TEGRATED CIRCUIT SILICON G ATE CM OS 8,388,608-WORD X8-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)805AJ/AFT/AJS/AFTS is an EDO (hyper page) dynamic RAM organized as 8,388,608 |
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TC5164 805AJ/AFT/AJS/AFTS-40 608-WORD 805AJ/AFT/AJS/AFTS 32-pin TNPC | |
ST7529-G
Abstract: st7529g S128240D-RGB st7529 COB led rgb
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S128240D-RGB ST7529-G st7529g st7529 COB led rgb | |
motherboard with multimeter
Abstract: 3487A fluke 52 k/j thermometer fluke 52 k/j Thermocouple fluke 52 k/j Omega k type thermocouple range
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Contextual Info: - H Y U N D A I « HY51V64160.HY51 V65160 4Ux16, Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow |
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HY51V64160 V65160 4Ux16, 16-bit A0-A12) | |
Contextual Info: OCX481 Crosspoint Switch Advanced Mini Data Sheet Features • • • • 1.6 Gb/s port data bandwidth, >38Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 48 configurable I/O ports – 24 dedicated differential input ports |
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OCX481 38Gb/s an282271, |