SILICON PNP EPITAXIAL PLANAR TRANSISTOR FM20 Search Results

SILICON PNP EPITAXIAL PLANAR TRANSISTOR FM20 Result Highlights (5)

Part	Manufacturer	Description	Download
MX0912B351Y	Rochester Electronics LLC	MX0912B351Y - NPN Silicon RF Power Transistor	PDF
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TTA004B	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N	Datasheet
TTA011	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini	Datasheet

SILICON PNP EPITAXIAL PLANAR TRANSISTOR FM20 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SA1667 Abstract: 2SA1668 FM20 22SA1 Contextual Info: 2SA1667/1668 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4381/4382 Symbol 2SA1667 2SA1668 Unit •Electrical Characteristics (Ta=25°C) Conditions Symbol 2SA1667 2SA1668 Unit –10max –10max µA –150 –200 External Dimensions FM20 (TO220F)	Original	2SA1667/1668 2SC4381/4382) 2SA1667 2SA1668 10max O220F) 2SA1667 2SA1668 FM20 22SA1	PDF
2SA1668 Abstract: 2SA1667 equivalent for 2sa1668 FM20 Contextual Info: 2SA1667/1668 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4381/4382 VCB= VEBO –6 V IEBO IC –2 A V(BR)CEO –10max –10max µA –150 –200 V µA –10max VEB=–6V –150min IC=–25mA –200min –1 A hFE VCE=–10V, IC=–0.7A 60min	Original	2SA1667/1668 2SC4381/4382) 10max 150min 200min 60min 20typ 60typ 2SA1668 2SA1667 equivalent for 2sa1668 FM20	PDF
Contextual Info: SSE T> • SANKEN ELECTRIC CO LTD 7TÎD741 0000^22 S4G BISAKJ Silicon PNP Epitaxial Planar 2SA1643 ☆ Low VcE sat Transistor * Com plem ent to type 2S C 4 3 2 7 Application Example: Electrical Characteristics Symbol Absolute Maximum Ratings Symbol (Ta= 25"C)	OCR Scan	2SA1643 10max 50min 75typ 45x01 T0220)	PDF
Contextual Info: ^SANKE^^LECTRIC CO LTD 5SE » • 7 * M 0 7 4 1 0000*121 b04 « S A K U Silicon PNP Epitaxial Planar 2SA1568 ☆ Low VcEisati With D io d e Transistor ☆Complement to type Application Example: D C M otor Driver, Chopper Regulator 2SC4065 -FM20 • Outline Drawing 4 •	OCR Scan	2SA1568 2SC4065 -FM20 60max 45x01 T0220)	PDF
2SA1725 Abstract: 2SC4511 FM20 DSA0016504 Contextual Info: 2SA1725 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4511 V 50min∗ VCE=–4V, IC=–2A IB –3 A VCE(sat) IC=–2A, IB=–0.2A –0.5max V PC 30(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 150typ pF °C	Original	2SA1725 2SC4511) 10max 80min 50min 20typ 150typ 100ms 2SA1725 2SC4511 FM20 DSA0016504	PDF
2SB1259 Abstract: 2SD2081 FM20 DSA0016505 Contextual Info: 3 k Ω (1 0 0Ω) E 2SB1259 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2081) A hFE mA –120min VCE=–4V, IC=–5A 2000min V IB –1 A VCE(sat) IC=–5A, IB=–10mA –1.5max PC 30(Tc=25°C) W VBE(sat) IC=–5A, IB=–10mA –2.0max	Original	2SB1259 2SD2081) 10max 120min 2000min 100typ 145typ O220F) 2SB1259 2SD2081 FM20 DSA0016505	PDF
2SB1626 Abstract: 2SD2495 FM20 Contextual Info: 7 0 Ω E 2SB1626 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2495) V ICBO VCEO –110 V IEBO VEBO –5 V V(BR)CEO IC –6 A IB –1 PC Tj 2SB1626 Unit VCB=–110V –100max µA 10.1±0.2 –100max µA –110min V hFE VCE=–4V, IC=–5A	Original	2SB1626 2SD2495) 100max 5000min 100typ 110typ 110min 2SB1626 2SD2495 FM20	PDF
2SC4064 Abstract: 2SA1567 FM20 VMA00 Contextual Info: 2SA1567 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4064 A hFE µA –50min V VCE=–1V, IC=–6A 50min IC=–6A, IB=–0.3A –0.35max V –3 A VCE(sat) PC 35(Tc=25°C) W fT VCE=–12V, IE=0.5A 40typ MHz 150 °C COB VCB=–10V, f=1MHz	Original	2SA1567 2SC4064) 100max 50min 35max 40typ 330typ O220F) 2SC4064 2SA1567 FM20 VMA00	PDF
2SA1567 Abstract: 2SC4064 FM20 DSA0016503 Contextual Info: 2SA1567 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4064 A hFE µA –50min V VCE=–1V, IC=–6A 50min IC=–6A, IB=–0.3A –0.35max V –3 A VCE(sat) PC 35(Tc=25°C) W fT VCE=–12V, IE=0.5A 40typ MHz 150 °C COB VCB=–10V, f=1MHz	Original	2SA1567 2SC4064) 50min 35max 40typ 330typ 100max O220F) 100x100x2 2SA1567 2SC4064 FM20 DSA0016503	PDF
2SA1725 Abstract: 2SC4511 FM20 2sa1725 transistor Contextual Info: 2SA1725 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4511 V 50min∗ VCE=–4V, IC=–2A IB –3 A VCE(sat) IC=–2A, IB=–0.2A –0.5max V PC 30(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 150typ pF °C	Original	2SA1725 2SC4511) 10max 80min 50min 20typ 150typ 100ms 2SA1725 2SC4511 FM20 2sa1725 transistor	PDF
2SD2642 Abstract: 2SB1686 FM20 2SD2642 equivalent transistor 2SB1686 Contextual Info: 7 0 Ω E 2SB1686 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2642) V ICBO VCEO –110 V IEBO VEBO –5 V V(BR)CEO IC –6 A IB –1 PC Tj Ratings Unit VCB=–110V –100max µA –100max µA –110min V hFE VCE=–4V, IC=–5A 5000min∗	Original	2SB1686 2SD2642) 100max 5000min 100typ 110typ 110min O220F) 2SD2642 2SB1686 FM20 2SD2642 equivalent transistor 2SB1686	PDF
2SA1488 Abstract: 2SA1488A FM20 Contextual Info: 2SA1488/1488A Silicon PNP Epitaxial Planar Transistor Complement to type 2SC3851/A ICBO VCB= VEBO –6 V IEBO IC –4 A V(BR)CEO –100max –100max µA –60 –80 VEB=–6V V µA –100max –60min IC=–25mA –1 A hFE VCE=–4V, IC=–1A 40min PC 25(Tc=25°C)	Original	2SA1488/1488A 2SC3851/A) 100max 60min 40min 15typ 90typ 80min 2SA1488 2SA1488A FM20	PDF
2SB1259 Abstract: 2SD2081 FM20 Contextual Info: 3 k Ω (1 0 0Ω) E 2SB1259 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2081) A hFE mA –120min VCE=–4V, IC=–5A 2000min V IB –1 A VCE(sat) IC=–5A, IB=–10mA –1.5max PC 30(Tc=25°C) W VBE(sat) IC=–5A, IB=–10mA –2.0max	Original	2SB1259 2SD2081) 10max 120min 2000min 100typ 145typ O220F) 2SB1259 2SD2081 FM20	PDF
2SB1257 Abstract: 2SD2014 FM20 nk co DSA0016505 Contextual Info: 2 k Ω (6 5 0Ω) E 2SB1257 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) A –10max µA –60min V hFE VCE=–4V, IC=–3A 2000min IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max PC 25(Tc=25°C) W VBE(sat) IC=–3A, IB=–6mA –2max	Original	2SB1257 2SD2014) 10max 60min 2000min 150typ 75typ O220F) 50x50x2 2SB1257 2SD2014 FM20 nk co DSA0016505	PDF

2SA1859A Abstract: 2SA1859 FM20 Contextual Info: 2SA1859/1859A Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4883/A V(BR)CEO IC=–10mA –180min –150min 60 to 240 V –1 A hFE VCE=–10V, IC=–0.7A PC 20(Tc=25°C) W VCE(sat) IC=–0.7A, IB=–70mA –1.0max V Tj 150 °C fT VCE=–12V, IE=0.7A	Original	2SA1859/1859A 2SC4883/A) 180min 150min 60typ 30typ 10max O220F) 2SA1859 2SA1859A FM20	PDF
2SD2014 Abstract: 2SB1257 FM20 Contextual Info: 2 k Ω (6 5 0Ω) E 2SB1257 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) A –10max µA –60min V hFE VCE=–4V, IC=–3A 2000min IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max PC 25(Tc=25°C) W VBE(sat) IC=–3A, IB=–6mA –2max	Original	2SB1257 2SD2014) 10max 60min 2000min 150typ 75typ O220F) 2SD2014 2SB1257 FM20	PDF
2SA1859A Abstract: 2SA1859 Silicon PNP Epitaxial Planar Transistor fm20 FM20 2SC4883 Contextual Info: 2SA1859/1859A Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4883/A V(BR)CEO IC=–10mA –150min –180min 60 to 240 V –1 A hFE VCE=–10V, IC=–0.7A PC 20(Tc=25°C) W VCE(sat) IC=–0.7A, IB=–70mA –1.0max V Tj 150 °C fT VCE=–12V, IE=0.7A	Original	2SA1859/1859A 2SC4883/A) 10max 150min 180min 60typ 30typ O220F) 2SA1859 2SA1859A Silicon PNP Epitaxial Planar Transistor fm20 FM20 2SC4883	PDF
2SB1258 Abstract: 2SD1785 FM20 DSA0016505 Contextual Info: 3 k Ω (1 0 0Ω) E 2SB1258 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD1785) A µA –100min hFE VCE=–2V, IC=–3A 1000min V IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max PC 30(Tc=25°C) W VBE(sat) IC=–3A, IB=–6mA –2max Tj	Original	2SB1258 2SD1785) 100min 1000min 100typ 10max O220F) 50x50x2 2SB1258 2SD1785 FM20 DSA0016505	PDF
2SA2042 Abstract: FM20 Contextual Info: 2SA2042 Silicon PNP Epitaxial Planar Transistor V ICBO VCEO −50 V IEBO VEBO −6 V V BR CEO IC −10（pulse−20） A hFE IB −3 A −10max VEB＝−6V −10max µA −50min V VCE＝−2V, IC＝−1A 130~310 VCE(sat) IC＝−5A, IB＝−0.1A −0.5max	Original	2SA2042 pulse-20 VCB-50V -10max IC-25mA -50min VCE-12V, 60typ VCB-10V, 2SA2042 FM20	PDF
2SB1258 Abstract: 2sb125 2SD1785 FM20 Contextual Info: 3 k Ω (1 0 0Ω) E 2SB1258 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD1785) A µA –100min hFE VCE=–2V, IC=–3A 1000min V IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max PC 30(Tc=25°C) W VBE(sat) IC=–3A, IB=–6mA –2max Tj	Original	2SB1258 2SD1785) 100min 1000min 100typ 10max O220F) 2SB1258 2sb125 2SD1785 FM20	PDF
2SA1568 Abstract: 2SA1568 equivalent 2SC4065 FM20 2SA1568,A1568 Contextual Info: 2SA1568 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4065 A IB –3 mA –60min V hFE VCE=–1V, IC=–6A 50min A VCE(sat) IC=–6A, IB=–0.3A –0.35max IECO=–10A –2.5max V 16.9±0.3 –60max V 35(Tc=25°C) W VFEC Tj 150 °C fT VCE=–12V, IE=0.5A	Original	2SA1568 2SC4065) 50min 35max 40typ 330typ 100max O220F) 2SA1568 2SA1568 equivalent 2SC4065 FM20 2SA1568,A1568	PDF
2SB1351 Abstract: FM20 2SB135 Contextual Info: 2 k Ω (1 0 0Ω) E 2SB1351 Silicon PNP Epitaxial Planar Transistor hFE mA –60min V VCE=–4V, IC=–10A 2000min IB –1 A VCE(sat) IC=–10A, IB=–20mA –1.5max PC 30(Tc=25°C) W VBE(sat) IC=–10A, IB=–20mA –2.0max V Tj 150 °C fT VCE=–12V, IE=1A	Original	2SB1351 60min 2000min 130typ 170typ 10max O220F) 50x50x2 2SB1351 FM20 2SB135	PDF
2SB1351 Abstract: FM20 DSA0016505 Contextual Info: 2 k Ω (1 0 0Ω) E 2SB1351 Silicon PNP Epitaxial Planar Transistor hFE mA –60min V VCE=–4V, IC=–10A 2000min IB –1 A VCE(sat) IC=–10A, IB=–20mA –1.5max PC 30(Tc=25°C) W VBE(sat) IC=–10A, IB=–20mA –2.0max V Tj 150 °C fT VCE=–12V, IE=1A	Original	2SB1351 60min 2000min 130typ 170typ 10max O220F) 50x50x2 2SB1351 FM20 DSA0016505	PDF
2SA1488 Abstract: 2SA1488A FM20 2SC3851 A DSA0016503 Contextual Info: 2SA1488/1488A Silicon PNP Epitaxial Planar Transistor Complement to type 2SC3851/A ICBO VCB= –60 VEBO –6 V IEBO IC –4 A V(BR)CEO IB –1 A hFE PC 25(Tc=25°C) W VCE(sat) Tj 150 °C fT –55 to +150 °C COB VCB=–10V, f=1MHz Tstg VEB=–6V µA V –80	Original	2SA1488/1488A 2SC3851/A) 100max 60min 80min 40min 15typ 90typ O220F) 2SA1488 2SA1488 2SA1488A FM20 2SC3851 A DSA0016503	PDF

SILICON PNP EPITAXIAL PLANAR TRANSISTOR FM20 Search Results

SILICON PNP EPITAXIAL PLANAR TRANSISTOR FM20 Result Highlights (5)

SILICON PNP EPITAXIAL PLANAR TRANSISTOR FM20 Datasheets Context Search

2SA1667

2SA1668

2SA1725

2SB1259

2SB1626

2SC4064

2SA1567

2SA1725

2SD2642

2SA1488

2SB1259

2SB1257

2SA1859A

2SD2014

2SA1859A

2SB1258

2SA2042

2SB1258

2SA1568

2SB1351

2SB1351

2SA1488