SILICON P CHANNEL MOS FET J 350 Search Results

A2253

Abstract: 2sk18
Contextual Info: 2SK1820-01 L,S FUJI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET • Features p SERIES j j ■ Outline Drawings • High speed switching • Low on-resistance • No ¡secondary breakdown • Low driving power • High voltage • V cse = ± 3 0 V Gurantee

HAT1047R

Abstract: HAT1047RJ
Contextual Info: HAT1047R, HAT1047RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0074-0500Z Previous ADE-208-1545D(Z Rev.5.00 Aug.27.2003 Features • • • • For Automotive Application (at Type Code "J") Low on-resistance Capable of –4.5 V gate drive

SIPMOS

Abstract: 2SK1509
Contextual Info: 2SK1509 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET p • Features S E R IE S j j j Outline Drawings • High cu rren t • Low n o-resistance • N o secondary b reakd ow n • Low driving p ow er • High fo rw a rd T ran scon d u ctan ce

2SK 1110

Abstract: hd1-M -DC5V
Contextual Info: 2 S K 1 8 1 7 -M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET _ TTT - r - l l i • Features ^ S E R I E S Outline Drawings • High current • Low no-resistance

a2231

Abstract: ups electrical symbols schematic symbols UPS 2SK1549
Contextual Info: 2SK1549 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F-I SERIES • Features O utline D raw ings • High speed sw itching • Low on-resistance • Low driving p o w er • High voltage ■ A pplications • Sw itch in g regulators

2SK957-M

Contextual Info: 2SK957-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F-II SERIES • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V gss = ± 3 0 V Guarantee

2SK957-M

Contextual Info: 2SK957-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F-II SER IES • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V gss = ± 3 0 V Guarantee

A2127

Abstract: cnc schematic 2SK1085-M 1085m
Contextual Info: 2 S K 1 0 8 5 -M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■A pplications

cnc schematic

Abstract: 387-M 2sk mosfet
Contextual Info: 2 S K 1 3 8 7 -M S IP M O S F U J I P O W E R M O S -F E T IM-CHANNEL SILICON POWER MOS-FET F-III SERIES • Outline Drawings ■ Features • High current • L ow on-resistance • No secondary b reakd ow n • Low driving p o w e r • High fo rw ard T ran scon d u ctan ce

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

Contextual Info: < Silicon RF Power MOS FET Discrete > RD02LUS2 RoHS Compliance, Silicon MOSFET Power Transistor 470MHz,2W OUTLINE DRAWING DESCRIPTION RD02LUS2 is a MOS FET type transistor specifically 4.4 +/-0.1 designed for VHF/UHF RF amplifiers applications. T YPE N AM E

hitachi mosfet power amplifier audio application

Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
Contextual Info: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3

MAR 544 MOSFET TRANSISTOR

Abstract: J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi RD70HVF1 7386 mos transistor d 2689 MOSFET 2095 transistor
Contextual Info: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:4th/Mar/02 MITSUBISHI RF POWER MOS FET ELHTROSTATIC SENSITIVE DEVICES RD70HVF1 Silicon MOSFET Power Transistor,! 75MHz70W 520MHz50W DESCRIPTION OUTLINE DRAWING RD70HVF1 is a MOS FET type transistor specifically

hd 9729

Abstract: 2SK2973 45980 78268 75458 75182 0L sot-89 944 SOT-89
Contextual Info: MITSUBISHI RF POWER MOS FET 2SK2973 SILICON MOS FET TYPE DESCRIPTION 2SK2973 ¡s a MOS FET type transistor specifically designed for OUTLINE DRAWING Dimensions in mm VHF/UHF power amplifiers applications. 1.5±0.1 FEATURES • High power gain:Gpe^13dB @ VDD-9.6V ,f"450MHz, Pin=17dBm

Contextual Info: MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:20th/Nov/02 ELETROSTATTC SENSITIVE DEVICES RD30HVF1 Silicon MOSFET Power Transistor,175MHz 30W DESCRIPTION OUTLINE DRAWING 22. 00 RD30HVF1 is a MOS FET type transistor specifically designed for

j 6815 transistor

Abstract: TRANSISTOR J 6815 EQUIVALENT C 5763 transistor transistor M 9718 5609 transistor 4082 mitsubishi 9622 transistor 4303 sot89 8948 780-4 transistor
Contextual Info: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET Revision date:26 /Feb.’02 RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications .

lv 5682

Abstract: mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 RD60HUF1 MOSFET, 3077 transistor k 2837
Contextual Info: ATTENTION OBSERVE PRECAUTIONS 1'OR HANDLING Revision date: J 2th/M ar.;02 MITSUBISHI RF POW ER MOS FET h le x ro s ta tic SENSITIVE DEVÏCES RD60HUF1 Silicon MOSFET Power Transistor, 520M Hz 60W DESCRIPTION OUTLINE DRAW ING RD60HUF1 is a MOS FET type transistor specifically

transistor rf m 9860

Abstract: equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet IC 4490
Contextual Info: -. MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING «ion date: I S ' V N o v . ’M ELETROSTATIC SENSITIVE DEVICES , O H X J F X Silicon MOSFET Power Transistor,520MHz 30W DESCRIPTION O U T L IN E D R A W IN G RD30HUF1 is a MOS FET type transistor specifically designed for

transistor 16933

Contextual Info: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES Revision date:25th/Nov.’02 MITSUBISHI RF POWER MOS FET RD01MUS1 Silicon MOSFET Power Transistor 520MHz,7.2V,lW DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

blanking Pulse generator circuit

Abstract: 14 pin ic circuit diagram MIP153 Pulse generator circuit 14 pin LATCH IC ic pin diagram ic 14 pin with function Latch Over current Protection "Intelligent Power Devices" 18 PIN IC for power supply
Contextual Info: Panasonic In telligent Power D e v ic e s IPDs MIP153 Silicon MOS 1C • Features • Single chip IC with high breakdown voltage power MOS FET and CMOS control circuit • Worldwide input (85 to 274VAC) possible • Over-voltage protection at secondary section, pulse by pulse over­

2SK1845

Abstract: 3sk85 2SK408 equivalent 3SK1 3sk156 3sk217 3SK228 3SK103 2sc464 2SC3511
Contextual Info: HITACHI Ultra High Frequency Devices DATA BOOK H IT A C H I ADE-41 CONTENTS • GENERAL INFORMATION. . . . . . 5 Si Bipolar Transistors.

Contextual Info: PM45100K Silicon N-Channel Power MOS FET Module HITACHI Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

C2545

Contextual Info: Panasonic Intelligent Power Devices IPDs MIP153 Silicon MOS 1C • Features • Single chip IC with high breakdown voltage power MOS FET and CMOS control circuit • Worldwide input (85 to 274VAC) possible • Over-voltage protection at secondary section, pulse by pulse over­

MP6801

Contextual Info: TOSHIBA MP6801 TOSHIBA POWER MOS FET MODULE SILICON N & P CHANNEL MOS TYPE L2- tt-MOS1V 6 IN 1 M P6801 HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS. 3-PHASE MOTOR DRIVE AND BIPOLAR DRIVE OF PULSE MOTOR. INDUSTRIAL APPLICATIONS Unit in mm 31.51-0.2 • •