1085M Search Results

2t smd

Abstract: ebe switches fbln GA1085 GA1085-MC1000 GA1085-MC500 PS1000
Contextual Info: C O M P U T I N G A N D N E T W O R K I N G Figure 1. Block Diagram FBIN rrn TEST VDD QO GND Q1 Q2 VD D E­ E E E E E S1 GA1085 R EFC LK n o i n n SO rtn F1 n n FO n n GND n r T \ VD D Phase Detector Q10 Phase Select VCO Q9 11-Output Configurable Clock Buffer

NFC10-24S05

Abstract: NFC10-24S05-4 NFC10-24S15 NFC10-48S05 NFC10 lr50913
Contextual Info: P NFC 10 SERIES A R TE SS rN T E C H N O L O V m g G I E Single and dual output S • • • • « • • 10 Watts output power Power density 13„3W/in3 2:1 input voltage range UL, CSA and VDE safety approvals 48V input units Overvoltage protection Extended operating tem perature range

Contextual Info: 19-2588; Rev 0; 9/02 825MHz to 915MHz, Dual SiGe High-Linearity Active Mixer The MAX9981 active mixers are optimized to meet the demanding requirements of GSM850, GSM900, and CDMA850 base-station receivers. These mixers provide exceptional linearity with an input IP3 of greater than

murata frequency mixer gsm 900

Abstract: high frequency mixer RF mixer 920 Mhz GRM1885C1H101J GSM900 MAX9981 MAX9981EGX-T murata frequency mixer gsm injection murata diversity
Contextual Info: 19-2588; Rev 0; 9/02 825MHz to 915MHz, Dual SiGe High-Linearity Active Mixer The MAX9981 active mixers are optimized to meet the demanding requirements of GSM850, GSM900, and CDMA850 base-station receivers. These mixers provide exceptional linearity with an input IP3 of greater than

Contextual Info: COMPUTING AND N E T WO RKI N G GA1085 Figure 1. Block Diagram FBIN S1 R EFC LK SO I T T I f T Ò I |~ 9 ~ | f s l TT TEST E F1 FO |~ T | m GND [~5 VDD Phase Detector VDD 13 QO GND Q1 Q2 Q10 E E EE Phase Select VCO 3 09 11-Output Configurable Clock Buffer GND

RF1196

Abstract: DS1103
Contextual Info: RF1196 RF1196SDM with Integrated B1 Duplexer: QB GSM, TB UMTS SDM WITH INTEGRATED B1 DUPLEXER: QB GSM, TB UMTS Package: Module, 4.5mmx4.5mmx1.0 mm RF1196 GSM Rx1 GSM Rx2 Features        GSM Rx3 Very Low IL and High Isolation: GSM LB Tx: 1.1dB

band 1 duplexer

Abstract: RF1196 1085MHz umts duplexer LTE duplexer
Contextual Info: RF1196 RF1196SDM with Integrated B1 Duplexer: QB GSM, TB UMTS SDM WITH INTEGRATED B1 DUPLEXER: QB GSM, TB UMTS Package: Module, 4.5mmx4.5mmx1.0 mm RF1196 GSM Rx1 GSM Rx2 Features        GSM Rx3 Very Low IL and High Isolation: GSM LB Tx: 1.1dB

TRF3761-B

Abstract: TRF3761-A TRF3761-H TRF3761-E TRF3761-F TRF3761-C
Contextual Info: TRF3761 www.ti.com . SLWS181J – OCTOBER 2005 – REVISED AUGUST 2008 INTEGER-N PLL WITH INTEGRATED VCO FEATURES

MAX2320

Abstract: MAX2320EUP MAX2321 MAX2322 MAX2321EUP MAX2322EUP MAX2324EUP MAX2326 MAX2326EUP MAX2327
Contextual Info: 19-1535; Rev 1; 6/00 UAL IT MAN TION K A ET U E L H A S EV TA WS DA FOLLO Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs All devices come in a 20-pin TSSOP-EP package with exposed paddle EP and are specified for the extended temperature range (-40°C to +85°C).

Base Terminal Station

Abstract: high frequency mixer PLO 52 RF POWER TRANSISTOR 100MHz RF POWER TRANSISTOR buffer 100MHz GSM900 MAX9982 MAX9982ETP murata frequency mixer gsm 900
Contextual Info: 19-2489; Rev 0; 7/02 825MHz to 915MHz, SiGe High-Linearity Active Mixer Features The MAX9982 high-linearity mixer integrates a local oscillator LO switch, LO driver, and an active mixer. On-chip baluns allow for single-ended RF and LO inputs. The active mixer eliminates the need for an

Tuneable PCB Antenna 900

Abstract: meander folded antenna RF pcb antenna for GSM meander line PCB helix antenna planar inverted f antenna
Contextual Info: PA.25 Antenna Integration Application Note Version 2 CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. BASICS APPLICATIONS GROUND PLANE EFFECTS IMPEDANCE BANDWIDTH VSWR GAIN EFFICIENCY POLARIZATION ADVANTAGES MOUNTING ENVIRONMENTAL CONSIDERATIONS

tunable antenna

Abstract: planar inverted f antenna meander folded antenna meander line meander antenna design 1820MHz
Contextual Info: the antenna solutions provider PA-25 Antenna Integration Application Note Version 2 CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. BASICS APPLICATIONS GROUND PLANE EFFECTS IMPEDANCE BANDWIDTH VSWR GAIN EFFICIENCY POLARIZATION ADVANTAGES MOUNTING

TRF3761-A

Abstract: TRF3761-E TRF3761-H TRF3761-F TRF3761-C TRF3761-B
Contextual Info: TRF3761 www.ti.com . SLWS181I – OCTOBER 2005 – REVISED MARCH 2008 INTEGER-N PLL WITH INTEGRATED VCO FEATURES

Contextual Info: Anam PA.25a Speciication Part No. PA.25a Product Name Anam Hexa-Band Cellular SMD Antenna GSM / CDMA / DCS / PCS / WCDMA /UMTS /HSDPA / GPRS / EDGE 800 MHz to 2200 MHz Feature High Eficiency Multi-Band SMD Antenna 35*5*6mm RoHS Compliant SPE-11-8-061/G | page 1 of 21

8648B

Abstract: FLUKE 29 series II multimeter FLUKE 75 1008CS-561XJBC Fluke 29 II multimeter GRM1885C1H101J MAX9981 MAX9981EVKIT center tap transformer for rf signal 560NH
Contextual Info: 19-2691; Rev 0; 12/02 MAX9981 Evaluation Kit This document provides a list of equipment required to evaluate the device, a straightforward test procedure to verify functionality, a description of the EV kit circuit, the circuit schematic, a bill of materials BOM and artwork for each layer of the PC board.

HP 437B power meter

Abstract: QFN-20-ep FLUKE 75 FLUKE 75 series II multimeter Fluke 19 Multimeter circuit diagram 1008CS-561XJBC GRM188R71C104K MAX9982 MAX9982ETP-T MAX9982EVKIT
Contextual Info: 19-2693; Rev 1; 1/04 MAX9982 Evaluation Kit The MAX9982 evaluation kit EV kit simplifies the evaluation of the MAX9982 825MHz to 915MHz high-linearity active down-converter mixer. It is fully assembled and tested at the factory. Standard 50Ω SMA connectors

4.2V

Abstract: 100341DMQB 100341FMQB 100341J-QMLV 100341W-QMLV F100341 F341
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 10/04/96 Last Update Date: 09/08/99 Last Major Revision Date: 08/18/99 MN100341-X REV 2A0 LOW POWER 8-BIT SHIFT REGISTER General Description The F100341 contains eight edge-trigged, D-type flipflops with individual inputs Pn and

2SK 129 A

Abstract: 1085 MR A2129 2SK1085-MR A2128
Contextual Info: 2SK1085-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - III S E R I E S • Features • Hicjh current • Low on-resistance • No secondary breakdown • Low driving power • Hich forward Transconductance ■Aoplications • Me tor controllers

TRF3761-E

Contextual Info: TRF3762 www.ti.com . SLWS205A – JANUARY 2008 – REVISED MAY 2008 INTEGER-N PLL WITH INTEGRATED VCO REF

ar6120

Abstract: TRF3761-E
Contextual Info: TRF3762 www.ti.com . SLWS205A – JANUARY 2008 – REVISED MAY 2008 INTEGER-N PLL WITH INTEGRATED VCO REF

MAX2320

Abstract: MAX2320EUP MAX2321 ics 0434 MAX2322 fm transmitter ic digital input MAX232 connection MAX2321EUP Cellular RF Transmitter 1900 2400 MHz MAX2324EUP
Contextual Info: 19-1535; Rev 1; 6/00 UAL IT MAN TION K A ET U E L H A S EV TA WS DA FOLLO Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs All devices come in a 20-pin TSSOP-EP package with exposed paddle EP and are specified for the extended temperature range (-40°C to +85°C).

TRF3761-E

Contextual Info: TRF3762 www.ti.com . SLWS205A – JANUARY 2008 – REVISED MAY 2008 INTEGER-N PLL WITH INTEGRATED VCO REF

016p

Contextual Info: CFPV-5 High Frequency ECL VCXO ISSUE 2; 25 JANUARY 2002 Frequency Control Delivery Options • Control Voltage range: –2.5V ±2.0V ■ Frequency @ –4.5V: +75ppm ref. to frequency @ Vc = –2.5V ■ Frequency @ –0.5V: –75ppm ref. to frequency @ Vc = –2.5V

Contextual Info: 2SK1085-M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-III SE R IE S • Outline Drawings ■ Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■A pplications