SIEMENS 800 169 O Search Results

Contextual Info: 32E D • 623b320 QDlblSl T « S I P NPN Silicon RF Transistor o , .t-. BFQ 29P SIEMENS/ SPCLi SEMICONDS _ • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. £ CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: 3SE D • flS3t.33Q 0 0 1 7 0 1 ^ S m S I P NPN Silicon RF Transistor T "2 l-f 7 _ SIE M E N S / SPCL-. SEMICONDS _ BFR • For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 to 30 mA. S CECC-type available: CECC 50002/256.

BFQ 58

Contextual Info: SIEM ENS NPN Silicon RF Transistor BFQ 29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. S CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions!

BFT65

Abstract: transistor bft65 f451 61 SIEMENS 25813
Contextual Info: SIEMENS BFT 65 NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFT 65 Marking BFT 65 Pin Configuration

Contextual Info: 32E D • 023b3SQ Q017027 H H S I P NPN Silicon RF Transistor —» 0 1 . 1 7 BFR93P SIEMENS/ SPCLn SEMICONDS ' ' _ • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: SIEMENS BFR 93P NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. £ CECC-type available: C E C C 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!

N48 630

Abstract: N48 250 B65669-E6-X22 B65531D160A48 B65611-N250-G48 B65661-T400-A48 Siemens N48 Siemens B65541 siemens N26 core P 18 x 11 B65532-B-T2
Contextual Info: p Cores Example o f an assembly set J Adjusting screw drivef for assembly only >v Adjusting screw Yoke Core Coil former Insulating washer 1 Core Threaded sleeve (glued-in) Insulating washer 2 Terminal carrier Qidmonc Matsushita Components 77 P Cores M ounting dim ensions of the assem bly set (mm)

Contextual Info: 32E D • Ô S 3 b 3 2 Q Q ü l 7 QSb 0 H S I P . N P N Silicon RF Transistor BFS 17P S I E M E N S / SPCL-, S E M I C O N D S r ~ 31 _ • For broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. 6 CECC-type available: CECC 50002/262.

Contextual Info: Snap-In Capacitors LL Grade B 41 503 B 43 503 For professional switch-mode power supplies Operation at temperatures up to 105 °C Construction • • • • • • • Charge-discharge proof, polar Aluminum case, fully insulated Snap-in solder pins to hold component in place on PC-board

siemens KS 630 S

Contextual Info: SIEMENS SIPMOS Power Transistors BUZ 12 BUZ 12 A • N channel • Enhancement mode • Avalanche-rated Type Vos I d To ^ D S on Package1) Ordering Code BUZ 12 50 V 42 A 65 *C 0.028 Û TO-220 AB C67078-S1331-A2 BUZ 12 A 50 V 42 A 44 'C 0.035 Q TO-220 AB

MMIC "SOT 89" marking

Abstract: marking HLEH Siemens MMIC MMIC marking code GA
Contextual Info: SIEM EN S CF 750 GaAs MMIC Datasheet * Biased Dual Gate GaAs FET * For frequencies from 400 MHz to 3 GHz * Mixer and amplifier applications in handheld equipment * Low power consumption, 2mA operating current typ. * Operating voltage range: 3 to 6V * Ion-implanted planar structure

MMIC marking CODE cf

Abstract: ma com 4 pin mmic A7560
Contextual Info: SIEMENS CF 750 GaAs MMIC D a t a s h e e t * Biased Dual Gate G a A s FET * For frequencies from 400 M Hz to 3 GHz * Mixer and amplifier applications in handheld equipment * Low power consumption, 2mA operating current typ. * Operating voltage range: 3 to 6V

Contextual Info: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: 32E D m Ô23b320 OGlb^flS S WÊ SIP NPN Silicon RF Transistor SIEMENS/ SP C Li SEMICONDS BFR35AP _ • For broadband amplifiers up to 2 GHz and fast non­ saturated switches at collector currents from 0.5 to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!

B41283 capacitor

Abstract: siemens b41283 B41283-A7227-T B41010-C5478-T B41283-B5227-T B43050D2476T B41010-B4108-T B41010-C5108-T B41283 B41283-B5107-T
Contextual Info: A lum inum Electrolytic C apacitors Capacitor with axial leads General-purpose grade Standard version for universal application A! case with insulating sleeve Welded term inals ensure reliable contacting Operation up to 105 ‘C " perm issible Rated voltage

10007

Abstract: capacitor 560 pF capacitor
Contextual Info: PTF 10007 GOLDMOS Field Effect Transistor 35 Watts, 1.0 GHz Description The PTF 10007 is a 35 Watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and gold metallization

BSM15GD120D

Abstract: 14V-12 vm305171 C160 QD45
Contextual Info: bOE D • ä23SbOS 0Q45Û00 'ibT « S I E G SIEMENS SIEMENS AKTIEN6ESELLSCHAF ~ r ^ ¿ 2 3 ' ~ 0 ’7 IGBT Module Preliminary Data BSM15GD120D VCE = 1200 V / c = 6 x 25 A at T c = 25 C / c = 6 x 15 A at r c = 80"C • Power module • 3-phase full bridge • Including fast free-wheel diodes

SIEMENS crystal filter

Abstract: SDA3202 XN3 marking xn13
Contextual Info: SIEM EN S GHz PLL with I 2C Bus and Four Chip Addresses Preliminary Data SDA 3302 Bipolar 1C Features • • • • • • • • 1 chip system for MPU control I2C bus 4 programmable chip addresses Short rise time for fast channel switch operations and improved loop stability

BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8

Contextual Info: - 1 ! 2SC » • 023SbOS 0004701 I H S I E 6 u‘ NPN Silicon RF Broadband Transistor SIEMENS AKTIENfiESELLSCHAF . D T~3/~13 BFT 12 —1 BFT 12 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to

CLY32

Abstract: CLY32-00 CLY32-05 CLY32-10
Contextual Info: CLY32 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 6 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application

BC5471

Abstract: BC547E BC 548 NPN relay 876 N 2C S BC5461 BC2371 BC516 548 BC550 bc4151 TLC 5491
Contextual Info: SIEMENS/ SPCL-. SEMIC ON DS Application Type NPN = N PNP = P 2TE D • epitaxial = E planar = PL suitable complementary transistors fl23b350 O D l b m b ■ T-'^-Ol Max. ratings Vc b o VCEO VfeBO le r, Plot flth JA [l/CES] V V V mA c mW K/W BC1671>N BC1681)N

B85111-A-B33

Abstract: B85111-A-B14 B85111-A-B16
Contextual Info: B85111-A-B Feed-Through Capacitors Rated voltage Y capacitors with external thread M 12 x 0,75 Rated current 440 V 250 V~ 16 A Coaxial feed-through capacitors as per V D E 0565-1. Clearance and creepage distance: > 4 mm. Dim ensions in mm Type /l - 3 /2 - 1 .5

Contextual Info: S IE M E N S CLY32 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 6 GHz • Hermetically sealed microwave power package • Low thermal resistance for