A23SBQS Search Results

Q62702-C327

Abstract: Q62702-C327-V2 bcy77 K1754 C327 Q62702-C327-V1 Q62702-C327-V3 78-IX Q60203-Y78-H BCY792
Contextual Info: 5SC D • a23SbQS 0Q0432S 7 « S I E G r PNP Silicon Planar Transistors _ SIEMENS AKTIENGESELLSCHAF . BCY77 25C 04325 D ;_ B£ I ? S BCY79 BCY 77, BCY 78, and BCY 79 are epitaxial PNP silicon planar transistors in TO 18 cases 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors are

1453a

Contextual Info: bOE D • /S235bQ5 O O t ' m ' i 21 3 « S I E S SIEMENS SIEMENS AKTIENGESELLSCHAF " p n ^ - o s r - io Single PNP Operational Amplifiers TAE 1453 TAF 1453 Features Bipolar IC • • • • • PNP input Supply voltage range between 3 V and 36 V Low current consumption, 0.25 mA typ.

Contextual Info: 5SC D m 023SbQS Q004312 ì IS I E G NPN Silicon Planar Transistor BCY6 6 7 -1 7 -2 .4 SIEMENS AKTIEN6ESELLSCHAF BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for

buz 90 af

Contextual Info: ÖÖD D • ÔSBSbQS 0014ä2fl b m s i E G 880 14828 D BUZ 88 ' T ~ 3 Cf ~ / 3 S I E M E N S A K T I E N G E S E L L S C H A F -Main ratings N-Channel Drain-source voltage Continuous drain current Drain-source on-resistance Description Case «>s I0 = 800 V

Contextual Info: SIEMENS Extended Line Card Interface Controller ELIC 1 PEB 20550 PEF 20550 Features Switching EPIC®-1 • Non-blocking switch for 32 digital (e.g. ISDN) or 64 voice subscribers - Bandwidth 16, 32, or 64 kbit/s - Two consecutive 64-bit/s channels can be

BRY 300

Abstract: BRY 100 BRY 55 200 BRY 55 A HS 817 VDR Siemens BRy55 siemens thyristors bry65 BRY 21
Contextual Info: 2SC D • flSBSbQS QQQ47bR T ■ S I E 6 r . 1 C3L U t lO T a -fZ _ . 2 o -// Silicon Miniature Thyristors ~ BRY 55/30. - S I E M E N S A K T IE N G E S E L L S C H A F _BRY SS/3_00 These diffused silicon thyristors in TO 92 plastic package 10 A 3 DIN 41868} are

S0014

Abstract: C67078-A1701-A2
Contextual Info: I aaD D • ö 2 3 5 b os 88D Gomsia 14918 D r o ? m s i z G -^ / 3 BUZ 214 SIEMENS AKTIENGESELLSCHAF _ Main ratings N-Channel Draln-source voltage yBS => 500 V Continuous drain current /0 = 7A Draln-source on-reslstance /7DS on = 0,8 £2

AF239

Abstract: transistor h5c AF 239 0406H F239 Q60106-X239 A23Sb05 WTV4 AAO-4A
Contextual Info: ESC D • ÔEBSbQS QQOMQbb R PNP Germanium RF Transistor ISIEû 25C 04066 0 AF 239 r-3 t- ¿>7 SIEMENS AKTIENGESELLSCHAF - for UHF input stages up to 900 MHz AF 239 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.

Contextual Info: Ô235h05 DOTfiflTfl b3S SIEMENS 8/16 K bit 1024/2048 x 8 bit Serial C M O S E E P R O M s, I 2C Syn ch ro n o u s 2-W ire Bus SLx 2 4C 08 /1 6 Preliminary Features • Data EEPROM internally organized as 1024/2048 bytes and 64/128 pages x 16 bytes • Low power CMOS

kds 9a

Abstract: C67078-A1609-A2 D880
Contextual Info: ÛÔD D • ÔSBSbOS 0014020 b H S I E 6 880 14828 D T ~ 3 Cî ~ / 3 BUZ 88 SIEMENS AKTIENGESELLSCHAF -Main ratings N-Channel = 800 V Drain-source voltage VDa = 4,3 A Continuous drain current Io Drain-source on-resistance ^D S on = 2,0 Q Description SIPMOS, N-channel, enhancement mode

Contextual Info: SIEMENS Memory Time Switch Large MTSL PEB 2047 PEB 2047-16 Preliminary Data 1 CMOS IC Features • Non-blocking tim e/space switch for 2048-, 4096-, 8192- or 16 384-kbit/s PCM systems • Different modes programm able for input and output separately • Configurable for a 4096-kHz, 8192-kHz or 16 384-kHz

VPT05155

Abstract: buz90 SiEMENS PM 350 98 C67078-S1321-A2 s34 diode transistor buz 90 GP-051
Contextual Info: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 90 Vds 600 V 10 ^bS on Package Ordering Code 4.5 A 1.6Í2 TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values

A1012

Abstract: Siemens S35 BUZ83A C67078-A1012-A3
Contextual Info: aûD » • aa35bQ5 o o m a io 88D 14810 D « sieù 7 “ ' 3 i? V / . B UZ 8 3 A SIEMENS AKTIENfiESELLSCHAF-Main ratings N-Channel Draln-source voltage Voa Continuous drain current Io Draln-source on-reslstance ^DS on 800 V 3,4 A 3,0 n

D965

Abstract: b098 bd98 d965 hfe BD976 BD980 Q62702-D963 Q62702-D965 Q62702-D967 QQQ4430
Contextual Info: 2SC » • 0235bDS Q0DMM2T fl « S I E G ^ PNP Silicon Darlington Transistors BD 976 BD 978 SIEMENS AKTIEN GE SEL LSC HA F 04429 ßD 98Q BD 976, BD 978, and BD 9 8 0 are epitaxial PNP silicon planar darlington transistors in plastic package similar to TO 202. These darlington transistors are designed for relay

Contextual Info: SIEMENS BFR 93P NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. £ CECC-type available: C E C C 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!

TRANSISTOR BFW 11

Abstract: bfw 10 transistor GPA 76 transistor 2sc 546 transistor bfw 83
Contextual Info: I ESC D • 053SbOS 0004734 2 ■ S I E û ! NPN Silicon RF Broadband Transistor BFW 93 design SIEMENS AKTIENÔESELLSCHAF Not for new CAI - - BFW 93 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance, similar to TO 119 50 B 3 DIN 41867 . The transistor is particularly suitable for use

Contextual Info: SIEM EN S Four Channel Codec Filter SICOFP-4 PEB 2465 Preliminary Data 1.1 CMOS Features • Single chip CODEC and FILTER to handle four COor PABX-channels • Specification according to relevant CCITT, EIA and LSSGR recommendations • Digital signal processing technique

RXTNB 2

Contextual Info: PXB 4220 SIEM ENS 1 1.1 1.2 1.3 1.4 1.5 1.6 O v e rv ie w .7 Features. 9

71c464

Abstract: LT 5248 Goldstar TV diagram HYB514256 SDA5231 siemens DRAM HYB514256 ST10011 HA-C6 sda 5243 HA-C10
Contextual Info: S1E D m fl235b05 004417D TIT « S I E G SIEM ENS SIEMENS AKTXENGESELLSCHAF Video Processor SPA 5248 Preliminary Data MOS 1C Features • I2C bus interface with complete direct access to the memory area. • Uses 64 Kx4 and 256 Kx4 dynamic RAM’s • Can store 32 or 128 teletext pages and acquire

Q4431

Contextual Info: 2SC » • û235bQS 000442*1 fl ■ SIEficÄ_., PNP Silicon Darlington Transistors BO 976 BD 978 SIEMENS AKTIENGESELLSCHAF 0 ^ 2 9 ßD 980 B D 976, BD 978, and BD 9 8 0 are epitaxial PNP silicon planar darlington transistors in plastic package similar to TO 202. These darlington transistors are designed for relay

C 548 B

Abstract: B549C BC650 C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B C547B TRANSISTOR BC 550 c transistor c 548
Contextual Info: asc D • fi 23S hü S Q Q Q m S Q T M S I E G _ T - 2~ 9 ~ Z / NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENGESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 550 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and

Contextual Info: aûD » • aa35bQ5 o o m a i o 88 D 14810 « sieù D . BUZ83A SIEMENS AKTIENfiESELLSCHAF-Main ratings N-Channel Draln-source voltage Vos Continuous drain current Io Draln-source on-reslstance ^DS on 800 V 3,4 A 3,0 n Description SIPMOS, N-channel, enhancement mode

Contextual Info: SIEMENS BUZ 385 SIPMOS Power Transistor • N channel • Enhancement mode V’ICfc'58 2 é 3 • FREDFET Pirn Pin 2 G Type BUZ 385 Vds 500 V 1D 9A ^DS on 0.8 Q Pin 3 D S Package Ordering Code TO-218AA C67078-A3210-A2 Maximum Ratings Parameter Symbol Drain source voltage

Contextual Info: SIEM ENS PEB 2096 Table of Contents Page 1 1.1 1.2 1.3 1.4 1.5 O ve rvie w . 3 F e a tu re s .7