FL23SFE Search Results
FL23SFE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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fn521
Abstract: 24C164 Q67100-H3232 Q67100-H3500 Q67100-H3501 Q67100-H3505 Q67100-H3506
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235b05 24C164 23SbD5 fn521 24C164 Q67100-H3232 Q67100-H3500 Q67100-H3501 Q67100-H3505 Q67100-H3506 | |
buz 90 afContextual Info: ÖÖD D • ÔSBSbQS 0014ä2fl b m s i E G 880 14828 D BUZ 88 ' T ~ 3 Cf ~ / 3 S I E M E N S A K T I E N G E S E L L S C H A F -Main ratings N-Channel Drain-source voltage Continuous drain current Drain-source on-resistance Description Case «>s I0 = 800 V |
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C67078-A1609-A2 fl23Sfe buz 90 af | |
C67078-A1103-A2
Abstract: V103 DIN 41872 kbs 005
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2f-13 C67078-A1103-A2 fl235bQ5 C67078-A1103-A2 V103 DIN 41872 kbs 005 | |
Contextual Info: SIEM ENS Audio Ringing Codec Filter Featuring Speakerphone Function ARCOFI -SP PSB 2165 CMOS 1C Preliminary Data 1.1 Features • Applications in digital terminal equipment featuring voice functions • Digital signal processing performs all CO D EC functions |
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P-LCC-28-R P-DIP-28 fi235b> | |
d880Contextual Info: flñD D • flS3Sfc.0S O O m ^ a b <1 « S I E G 88D 14936 D . f * BUZ 220 SIEMENS AK TI EN GE SE LLS C HA F Main ratings N-Channel Draln-source voltage Continuous drain current Draln-source on-reslstance Description Case Vos ^DS Ofl 800 V 6.5 A 1.5 í l |
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235b05 d880 | |
FP 310 L 100-75Contextual Info: ,•— Infineon technologies FP 310 L 100 Contactless Potentiometer Version 2.0 Features • Devoid of friction and abrasion at contact point • No electrical contact noise • Insensitive to contamination, moisture ingression, corrosion and vibration • Low operating torque |
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013M3bb FP 310 L 100-75 | |
smd transistor A1t
Abstract: SMD a1T Transistor transistor SMD 33g TRANSISTOR SMD MARKING CODE 3t1 A1t smd transistor TRANSISTOR A1t smd diode A1T A1T TRANSISTOR
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OT-223 67000-S300 E6327 S35bQ5 SQT-89 B535bQ5 D13377Ã B235bG5 smd transistor A1t SMD a1T Transistor transistor SMD 33g TRANSISTOR SMD MARKING CODE 3t1 A1t smd transistor TRANSISTOR A1t smd diode A1T A1T TRANSISTOR | |
Contextual Info: SIEMENS BFG 196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1,5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • f j = 7.5GHz F = 1.5 dB at 900MHz |
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900MHz BFG196 Q62702-F1292 OT-223 fl235bG5 fl235b05 D1217Ã |