BSM15GD120D Search Results

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

E3224

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

E3224

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

E3224

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung

Contextual Info: BSM15GD120D Transistors Three-Phase Bridge IGBT Power Module Isolated Case Y/N Circuits Per Package1 V(BR)CES (V)1.2k V(BR)GES (V) I(C) Max. (A)15 Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case0.8

BSM15GD120D

Abstract: 14V-12 vm305171 C160 QD45
Contextual Info: bOE D • ä23SbOS 0Q45Û00 'ibT « S I E G SIEMENS SIEMENS AKTIEN6ESELLSCHAF ~ r ^ ¿ 2 3 ' ~ 0 ’7 IGBT Module Preliminary Data BSM15GD120D VCE = 1200 V / c = 6 x 25 A at T c = 25 C / c = 6 x 15 A at r c = 80"C • Power module • 3-phase full bridge • Including fast free-wheel diodes

E3224

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

BSM15GD120DLCE3224

Abstract: E3224
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

E3224

Abstract: IC chip 555 SIGC25T120CL
Contextual Info: SIGC25T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC25T120CL VCE ICn 1200V 15A This chip is used for:

E3224

Abstract: SIGC25T120CL
Contextual Info: Preliminary SIGC25T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC25T120CL VCE ICn 1200V 15A This chip is used for:

E3224

Abstract: SIGC25T120CL
Contextual Info: Preliminary SIGC25T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC25T120CL VCE ICn 1200V 15A This chip is used for:

BT diode

Abstract: ECONOPACK mounting instructions bsm 25 gd 1200 n2 bsm 75 gd 120 n2 bsm 50 gd 120 n2 calculation of IGBT snubber siemens igbt BSM 200 GA 120 BSM15GD120DN2 diode bym 26 siemens igbt BSM 100
Contextual Info: Technische Angaben Technical Information SIEMENS 1 Übersicht IGBT-Module 1 O verview IG BT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V,

BSM15GD120D

Contextual Info: SIEMENS B SM 15 G D 120 D IG B T Module Preliminary Data VCE = 1200 V I c = 6 x 25 A at Tc = 25 "C I c = 6 x 1 5 A at r o = 80" C • Power module • 3-phase full bridge • Including fast free-wheel diodes • Package with insulated metal base plate • Package outlines/Circuit diagram: 31’

Contextual Info: Preliminary SIGC25T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC25T120CL VCE ICn 1200V 15A This chip is used for:

thyristor Q 720 To220

Abstract: siemens bsm200ga120dn2 bup transistor BSM50GD120DN2 BSM15GD siemens igbt BSM100GB120DN2 BSM30GD60DN2 BSM25GD120DN2 BSM20GD60DN2
Contextual Info: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Mario Feldvoss ● Sven Konrad ● Thomas Laska Second-generation IGBTs: The mighty midgets Contemporary power electronics applications call for smaller, lighter and more rugged components. They must also consume less energy, have a wider dynamic

FS20R06XE3

Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
Contextual Info: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors

641B

Abstract: BSM15GD120DN2 C67076-A2504-A
Contextual Info: BSM 15 GD 120 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 15 GD 120 DN2 BSM 15 GD120DN2E3224 IC Package Ordering Code 1200V 25A ECONOPACK 2 C67076-A2504-A67

Contextual Info: e u p e c T e c h n i s c h e In f o r m a t io n / T e c h n ic a l In f o r m a t io n ¡GBT-Modules B S M 15 G D 1 2 0 D L C E3224 vorläufige Daten preliminary data H öchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical

bsm25gp120 b2

Abstract: FF300R12KE3 BSM50GD120DN2E3226 FZ1600R12KF4 FZ1200R16KF4 FF400R33KF2 BSM100GB60DLC BSM50GD60DLC FZ600R12KE3S FF600R12KE3
Contextual Info: IGBT High Power Modules 1200 VCES 1200 VCES Type * Dual modules IH1/4 IH7 Single modules Standard 2. Generation FF400R12KF4 FF600R12KF4 FF800R12KF4 Low Loss 2. Generation FF400R12KL4C FF600R12KL4C FF800R12KL4C IGBT3 ◆ FF600R12KE3 ◆ FF800R12KE3 ◆ FF1200R12KE3

bsm 25 gd 1200 n2

Abstract: bsm 75 gd 120 n2 siemens mosfet BSM 50 siemens igbt bsm 50 gd 120 n2 Thyristor Tabelle BSM15GD BSM15GD120DN 250068 BSM15GD120DN2
Contextual Info: Technische Angaben Technical Information 1 Übersicht IGBT-Module 1 Overview IGBT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V, 1200 V und 1700 V und im Strombereich

bsm150gd120dn2

Abstract: bsm200gd120dn2 ECONOPACK BSM20GD60DN2 BSM30GD60DN2 BSM25GD120DN2 BSM100GD120DN2 BSM50GD120DN2 BSM10GD120DN2 BSM10GD60DN2
Contextual Info: APPLICATIONS POWER SEMICONDUCTORS Mario Feldvoss ● Andreas Karl IGBT modules of the second generation: Econopacks shrink frequency converters Siemens has developed technically superior, but low-cost packages for second-generation IGBTs in the power range from

FS450R12KE3 S1

Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
Contextual Info: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.

BSM25GP120 b2

Abstract: BSM15GP120 b2 BSM50GD120DN2E3226 FS10R06VL4_B2 BSM35GP120 F4-150R12KS4 FS10R06VL4 BSM30GD60DLCE3224 FZ1200R16KF4 BSM15GD120DN2E3224
Contextual Info: kuka-2003-inhalt.qxd 17.04.2003 10:33 Uhr Seite 7 EasyPIM 600 V-1200 V Type VCES V Low Loss 2. Generation ◆ FB6R06VL4 ◆ FB10R06VL4 FB10R06KL4 FB10R06KL4G FB10R06KL4G_B1 FP10R06KL4 FP10R06KL4_B3 FB15R06KL4 FB15R06KL4_B1 FP15R06KL4 FB20R06KL4 FB20R06KL4_B1

bsm15gd120dlc

Contextual Info: SIGC25T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC25T120CL VCE ICn 1200V 15A This chip is used for: