BSM15GD Search Results

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

E3224

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

E3224

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

E3224

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung

Contextual Info: BSM15GD120D Transistors Three-Phase Bridge IGBT Power Module Isolated Case Y/N Circuits Per Package1 V(BR)CES (V)1.2k V(BR)GES (V) I(C) Max. (A)15 Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case0.8

BSM15GD120D

Abstract: 14V-12 vm305171 C160 QD45
Contextual Info: bOE D • ä23SbOS 0Q45Û00 'ibT « S I E G SIEMENS SIEMENS AKTIEN6ESELLSCHAF ~ r ^ ¿ 2 3 ' ~ 0 ’7 IGBT Module Preliminary Data BSM15GD120D VCE = 1200 V / c = 6 x 25 A at T c = 25 C / c = 6 x 15 A at r c = 80"C • Power module • 3-phase full bridge • Including fast free-wheel diodes

E3224

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

BSM15GD100D

Abstract: C160 004S7 VM305171
Contextual Info: bGE D • fl235bG5 0DMS712 Tb3 ■ SIEG SIEMENS SIENENS AKTIENûESELLSCHAF ~TïJ3rC7 IGBT Module BSM15GD100D Preliminary Data V CE = 1000 V = 6 x 25 A at Tc = / c = 6 x 15 A at T c = 80 ‘C Ic • • • • • 25 C Power m odule 3-phase full bridge Including fast free-wheel diodes

BSM15GD120DLCE3224

Abstract: E3224
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

BSM15GD100D

Contextual Info: BSM15GD100D Transistors Three-Phase Bridge IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)1.0k V(BR)GES (V)20 I(C) Max. (A)15 Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case1.3

E3224

Abstract: IC chip 555 SIGC25T120CL
Contextual Info: SIGC25T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC25T120CL VCE ICn 1200V 15A This chip is used for:

E3224

Abstract: SIGC25T120CL
Contextual Info: Preliminary SIGC25T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC25T120CL VCE ICn 1200V 15A This chip is used for:

E3224

Abstract: SIGC25T120CL
Contextual Info: Preliminary SIGC25T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC25T120CL VCE ICn 1200V 15A This chip is used for:

BT diode

Abstract: ECONOPACK mounting instructions bsm 25 gd 1200 n2 bsm 75 gd 120 n2 bsm 50 gd 120 n2 calculation of IGBT snubber siemens igbt BSM 200 GA 120 BSM15GD120DN2 diode bym 26 siemens igbt BSM 100
Contextual Info: Technische Angaben Technical Information SIEMENS 1 Übersicht IGBT-Module 1 O verview IG BT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V,

Contextual Info: Preliminary SIGC25T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC25T120CL VCE ICn 1200V 15A This chip is used for:

Eupec BSM25GD120DN2E3224

Abstract: BSM50GD120DN2E3226 EUPEC BSM50G*120DN2 BSM400GA170DLS BSM25GD120DN2E BSM20GP60 BSM25GD120DN2E3224 2902 BSM10GP120 BSM35GD120DLCE3224
Contextual Info: MARKETING NEWS Datum: 2001-01-19 Seite 1 von 1 Document No.: MN2001-02 Dear colleagues, please be notified that Toshiba has withdrawn some products. To offer the costumer an exactly technical alternative solution or an matchable technical alternative we built up the following checklist.

thyristor Q 720 To220

Abstract: siemens bsm200ga120dn2 bup transistor BSM50GD120DN2 BSM15GD siemens igbt BSM100GB120DN2 BSM30GD60DN2 BSM25GD120DN2 BSM20GD60DN2
Contextual Info: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Mario Feldvoss ● Sven Konrad ● Thomas Laska Second-generation IGBTs: The mighty midgets Contemporary power electronics applications call for smaller, lighter and more rugged components. They must also consume less energy, have a wider dynamic

siemens igbt bsm 150 gd 120d

Abstract: siemens igbt BSM 15 gd 120d 15GD 120D2 BSM15GD120
Contextual Info: SIEMENS BSM 15 GD 120 02 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate BSM 15 GD 120 D2 111 Type 1200V 25A Package Ordering Code SIXPACK 1 C67076-A2504-A17 Maximum Ratings

BSM15GD100D

Abstract: diode bridge 15G
Contextual Info: SIEMENS B S M 15G D 100D IG B T M o d u le Preliminary Data V CE = 1000 V / c = 6 x 25 A at T c = 25 C / c = 6 x 15 A at r c = 80 C • • • • • Power module 3-phase full bridge Including fast free-wheel diodes Package with insulated metal base plate

FS20R06XE3

Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
Contextual Info: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors

641B

Abstract: BSM15GD120DN2 C67076-A2504-A
Contextual Info: BSM 15 GD 120 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 15 GD 120 DN2 BSM 15 GD120DN2E3224 IC Package Ordering Code 1200V 25A ECONOPACK 2 C67076-A2504-A67

BSM20GP60

Abstract: BSM10GD60DL BSM15GD BSM150GB60DN2 BSM10GP60 BSM15GP60 BSM30GP60 BSM50GD60DN2 BSM150GD60DN2 BSM400GB60DN2
Contextual Info: European Power Semiconducctor and Electronics Company GmbH + Co. KG 600V IGBT modules reach new levels of efficiency for power electronics applications. By Andreas Karl, 1998 Existing and newly evolving markets and applications for power electronics are challenging electronics manufacturers

Contextual Info: e u p e c T e c h n i s c h e In f o r m a t io n / T e c h n ic a l In f o r m a t io n ¡GBT-Modules B S M 15 G D 1 2 0 D L C E3224 vorläufige Daten preliminary data H öchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical

bsm25gp120 b2

Abstract: FF300R12KE3 BSM50GD120DN2E3226 FZ1600R12KF4 FZ1200R16KF4 FF400R33KF2 BSM100GB60DLC BSM50GD60DLC FZ600R12KE3S FF600R12KE3
Contextual Info: IGBT High Power Modules 1200 VCES 1200 VCES Type * Dual modules IH1/4 IH7 Single modules Standard 2. Generation FF400R12KF4 FF600R12KF4 FF800R12KF4 Low Loss 2. Generation FF400R12KL4C FF600R12KL4C FF800R12KL4C IGBT3 ◆ FF600R12KE3 ◆ FF800R12KE3 ◆ FF1200R12KE3