004S7 Search Results

Contextual Info: bOE D • fl53SbOS 004S71b 34b ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF SIMOPAC Module V DS ID BSM 191 F = 1000 V =28 A R ds on = 0 .4 2 £2 • • • • • • • Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate

siemens bsm 284 f

Abstract: BSM284F V103 diode dSS 16
Contextual Info: ti□ E ]> • fl23Sh05 004S7SÔ ATS « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF ^ - 2 3 - 0 7 BSM 284 F SIM O PAC Module VDS / D = 800 V = 2 X 20 A ^ DS on = 0.48 i ì • Power module • Half-bridge • FREDFET • N channel • Enhancement mode • Package with insulated metal base piate

HD15303

Contextual Info: HD 153035F 56-Mbps Data Channel Processor # H ITA CH I _ Under Development Description The HD153035F is a 56 Mbps 1-7 ENDEC data separator with built-in read pulse detector, active filter, frequency synthesizer and synchronizer developed for use in magnetic disk drives.

Contextual Info: HARRIS SEMICOND SECTOR 5ÖE D iU HARRIS W SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRL430 D, R, H • 43D2271 004S 7GD ^23 « H A S 2N7281D, 2N7281R 2N7281H Radiation Hardened N-Channel Power MOSFETs December 1992 Features • 2A, 500V, RDS(on) - 2.500

Contextual Info: HARRIS SEMICON] SECTOR SfiE D • M3QEE71 DDMS772 GIT B H A S 2N7305D, 2N7305H 2N7305H HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK460 D, R, H) Radiation Hardened N-Channel Power MOSFETs Decem ber 1992 Features • 17A, 500V, RDS{on) x 0.400»

Contextual Info: HARRIS SENICOND SECTOR 30 5ÔE D HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK260 D, R, H • 4 3 0 2 27 1 0 0 4 5 7 b 2 17G H H A S 2N7301D, 2N73U1H 2N7301H Radiation Hardened N-Channel Power MOSFETs December 1992 T & f- iS

IRFP350

Abstract: IRFP350FI Transistor IRFP350 THOMSON
Contextual Info: 7^237 *57 0QMS73T TS? SGTH SGS-mOMSON IRFP350 IRFP350FI R Æ O œ o & tlû ïïm r e S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IR F P 3 5 0 IR F P 3 5 0 F I V dss 40 0 V 40 0 V R dS oii Id < 0 .3 £2 < 0 .3 a 16 A 10 A TYPICAL FtDS(on) = 0.21 £2

HD15303

Abstract: HD153035F MAGNETIC HEAD fiter 27 mhz vfo
Contextual Info: HD153035F 56-Mbps Data Channel Processor H IT A C H I Under Development Description The HD153035F is a 56 Mbps 1-7 ENDEC data separator with built-in read pulse detector, active filter, frequency synthesizer and synchronizer developed for use in magnetic disk drives. In read mode the

on 5295 transistor

Abstract: fr91a BFR91A transistor bfr91a to92 fr91a TO-92 BFR91A 993 395 pnp npn transistor ai 757 TRANSISTOR fr91a NPN/TRANSISTOR 187
Contextual Info: Philips Sem iconductors JZ - 3 /- I Z Product specification - ^ NPN 6 GHz wideband transistor PHILIPS INTERNATIONAL BFR91A 711Dfl2b D L m 5 7 C H 5bE 57 B • P H IN PINNING FEATURES DESCRIPTION PIN • Low noise • Low intermodulation distortion • High power gain

Contextual Info: ADSP-21060/62 SHARC Preliminary Data Sheet November 1994 For current information contact Analog Devices at 617 461-3881 SUM M ARY • High-Performance Signal Processor for Speech, Sound, Graphics, and Im aging Applications • Super Harvard Architecture— Four Independent Buses for Dual Data, Instructions, and I/O

K2040

Contextual Info: bOE D • flE35b05 DD457M4 200 ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF r = 5 3 - o 7 SIMOPAC Module V DS = 4 0 0 V / □ = 2 x R D S o n = 0 . 1 • • • • • • • 4 5 BSM 244 F A £2 Power module Half-bridge FREDFET N channel Enhancement mode

BSM15GD100D

Abstract: C160 004S7 VM305171
Contextual Info: bGE D • fl235bG5 0DMS712 Tb3 ■ SIEG SIEMENS SIENENS AKTIENûESELLSCHAF ~TïJ3rC7 IGBT Module BSM15GD100D Preliminary Data V CE = 1000 V = 6 x 25 A at Tc = / c = 6 x 15 A at T c = 80 ‘C Ic • • • • • 25 C Power m odule 3-phase full bridge Including fast free-wheel diodes

Contextual Info: b427£2S 0 0 4 2 7 3 2 L.T1 «INECE NEC Electronics Inc. fiPD78002 Family fiPD78001 B/002B/P014 8 B i t > K-Series Microcontrollers General Purpose September 1993 Description The fiPD78001B, pPD78002B, and juPD78P014* are members of the K-Series of m icrocontrollers. The

Contextual Info: 7^2^537 0GM5700 0^2 • SGTH _ SGS-THOMSON IRF820FI IRF822/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V dss RDS on Id IRF820 IRF820FI 500 V 500 V < 3 n < 3 n 3 A IRF822 IRF822FI 500 V 500 V <4Q < 4 n ■ ■ ■ ■

Contextual Info: HARRIS SEniCOND A R Sf i E SECTOR Cm H U U S E M I C O N D U C T O R R IS REGISTRATION PENDING Currently Available as FRS9130 D, R, H December 1992 . - D • M3 Q2 S 7 1 D D 4 5 7 AE Tb^ HHAS 2N7309D, 2N7309R 2N7309H - Radiation Hardened P-Channel Power MOSFETs

A1765-2

Contextual Info: HARRIS SEMICOND SECTOR SflE » fJ SHARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF250 D, R, H IHAS M302271 QQMS737 T1S 2N7294D, 2N7294R 2N7294H Radiation Hardened N-Channel Power MOSFETs December 1992 Package '- “P 3 V Features

BFR95

Abstract: 1 Fp 33 transistor bfr95 philips QDHS773 D2 144 transistor
Contextual Info: Product specification Philips Semiconductors r^ 3 3 -o s NPN 3.5 GHz wideband transistor DESCRIPTION 711062b QDHS773 H76 M P H I N SbE D PHILIPS INTERNATIONAL BFR95 PINNING NPN resistance-stabilized transistor in a SOT5 TO-39 metal envelope, with collector connected to the case.

Contextual Info: HARRIS SEMICOND SECTOR 5ÖE D HARRIS S E M I C O N JD U C T 0 R REGISTRATION PENDING Currently Available as FRK264 D, R, H • 43G 2271 □DHS7b? 7S2 H H A S 2N7303D, 2N7303R 2N7303H Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features