SI544 Search Results

Contextual Info: Si5446DU www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a RDS(on) () MAX. 30 0.0064 at VGS = 10 V 25 0.0070 at VGS = 6 V 25 0.0085 at VGS = 4.5 V 25 • TrenchFET Power MOSFET • Thermally enhanced PowerPAK®

marking code BC

Abstract: Si5445DC
Contextual Info: Si5445DC New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.035 @ VGS = –4.5 V "7.1 0.047 @ VGS = –2.5 V "6.2 0.062 @ VGS = –1.8 V "5.7 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BC XX

74055

Abstract: transistor 74055 Si5441DC Si5441DC-T1 Si5441DC-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si5441BDC vs. Si5441DC Description: P-Channel, 2.5 V G-S MOSFET Package: 1206-8 ChipFET Pin Out: Identical Part Number Replacements: Si5441BDC-T1-E3 Replaces Si5441DC-T1-E3 Si5441BDC-T1 Replaces Si5441DC-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

SI5445DC-T1

Abstract: 1206 8 ChipFET Si5445BDC Si5445DC
Contextual Info: Specification Comparison Vishay Siliconix Si5445BDC vs. Si5445DC Description: P-Channel, 1.8 V G-S MOSFET Package: 1206-8 ChipFET Pin Out: Identical Part Number Replacements: Si5445BDC-T1-E3 Replaces Si5445DC-T1-E3 Si5445BDC-T1 Replaces Si5445DC-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

1206-8

Contextual Info: Si5441BDC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.045 @ VGS = −4.5 V −6.1 0.052 @ VGS = −3.6 V −5.7 0.080 @ VGS = −2.5 V −4.6 D TrenchFETr Power MOSFET Qg (Typ) 11.5

W 1.4852

Abstract: 9952 9962 mosfet AN609
Contextual Info: Si5441BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

71055

Abstract: MAX 71055 D 71055 Si5441DC Si5441DC-T1
Contextual Info: Si5441DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.055 @ VGS = −4.5 V −5.3 0.06 @ VGS = −3.6 V −5.1 0.083 @ VGS = −2.5 V −4.3 D TrenchFETr Power MOSFET D 2.5-V Rated Qg (Typ) Pb-free

49468

Abstract: AN609 Si5443DC
Contextual Info: Si5443DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si5447DC

Contextual Info: SPICE Device Model Si5447DC Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si5443DC

Contextual Info: SPICE Device Model Si5443DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si5441DC

Abstract: Si5441DC-T1
Contextual Info: Si5441DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.055 @ VGS = −4.5 V −5.3 0.06 @ VGS = −3.6 V −5.1 0.083 @ VGS = −2.5 V −4.3 D TrenchFETr Power MOSFET D 2.5-V Rated Qg (Typ) Pb-free

VISHAY MARKING BM

Abstract: Si5445BDC
Contextual Info: Si5445BDC Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.033 at VGS = - 4.5 V - 7.1 0.043 at VGS = - 2.5 V - 6.2 0.060 at VGS = - 1.8 V - 5.3 Qg (Typ.) 14 • Halogen-free According to IEC 61249-2-21

Contextual Info: SPICE Device Model Si5440DC www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Si5441DC

Abstract: a12s
Contextual Info: SPICE Device Model Si5441DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si5445BDC Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.033 at VGS = - 4.5 V - 7.1 0.043 at VGS = - 2.5 V - 6.2 0.060 at VGS = - 1.8 V - 5.3 Qg (Typ.) 14 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si5445BDC New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 FEATURES rDS(on) (W) ID (A) 0.033 @ VGS = −4.5 V −7.1 0.043 @ VGS = −2.5 V −6.2 0.060 @ VGS = −1.8 V −5.3 D TrenchFETr Power MOSFET Qg (Typ) 14 1206-8 ChipFETr

Contextual Info: Si5443DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (Ω) ID (A) 0.065 @ VGS = -4.5 V 4.9 0.074 @ VGS = -3.6 V 4.6 0.110 @ VGS = -2.5 V 3.8 S 1206-8 ChipFETt 1 D D G D D D D Marking Code G BB XX S Lot Traceability

Contextual Info: Si5441BDC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.045 @ VGS = −4.5 V −6.1 0.052 @ VGS = −3.6 V −5.7 0.080 @ VGS = −2.5 V −4.6 D TrenchFETr Power MOSFET Qg (Typ) 11.5

Si5445BDC

Contextual Info: Si5445BDC New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 FEATURES rDS(on) (W) ID (A) 0.033 @ VGS = −4.5 V −7.1 0.043 @ VGS = −2.5 V −6.2 0.060 @ VGS = −1.8 V −5.3 D TrenchFETr Power MOSFET Qg (Typ) 14 1206-8 ChipFETr

Contextual Info: Si5442DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. (A)a ID 0.0100 at VGS = 4.5 V 25 0.0115 at VGS = 2.5 V 25 0.0135 at VGS = 1.8 V 25 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package

Si5443DC

Contextual Info: Si5443DC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "4.9 0.074 @ VGS = –3.6 V "4.6 0.110 @ VGS = –2.5 V "3.8 S 1206-8 ChipFET 1 D D G D D D D Marking Code G BB XX

Si5449DC

Contextual Info: SPICE Device Model Si5449DC P-Channel 30-V D-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse

Contextual Info: Si5441BDC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.045 @ VGS = −4.5 V −6.1 0.052 @ VGS = −3.6 V −5.7 0.080 @ VGS = −2.5 V −4.6 D TrenchFETr Power MOSFET Qg (Typ) 11.5

AN811

Contextual Info: Si5441DC Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.055 at VGS = - 4.5 V - 5.3 0.06 at VGS = - 3.6 V - 5.1 0.083 at VGS = - 2.5 V - 4.3 Qg (Typ.) 11 • Halogen-free According to IEC 61249-2-21