SI5443DC Search Results
SI5443DC Datasheets (7)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| Si5443DC | Vishay Intertechnology | P-Channel 2.5-V (G-S) MOSFET | Original | 77.28KB | 4 | ||
| SI5443DC | Vishay Siliconix | P-Channel 2.5-V (G-S) MOSFET | Original | 77.28KB | 4 | ||
| SI5443DC | Vishay Siliconix | P-Channel 2.5-V (G-S) MOSFET | Original | 102.56KB | 4 | ||
| Si5443DC SPICE Device Model | Vishay | P-Channel 2.5-V (G-S) MOSFET | Original | 196.43KB | 3 | ||
| SI5443DC-T1 | Vishay Intertechnology | P-Channel 2.5-V (G-S) MOSFET | Original | 77.28KB | 4 | ||
| SI5443DC-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 3.6A 1206-8 | Original | 9 | |||
| SI5443DC-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 3.6A 1206-8 | Original | 9 |
SI5443DC Price and Stock
Vishay Intertechnologies SI5443DC-T1-GE3MOSFETs 20V 4.9A 2.5W 65mohm @ 4.5V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI5443DC-T1-GE3 |
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Vishay Siliconix SI5443DC-T1SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3.6A I(D), 1-ELEMENT, P-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI5443DC-T1 | 2,340 |
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Buy Now | |||||||
| SI5443DC-T1 | 147 |
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Buy Now | ||||||||
Vishay Intertechnologies SI5443DC-T1SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3.6A I(D), 1-ELEMENT, P-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI5443DC-T1 | 139 |
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SI5443DC Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
49468
Abstract: AN609 Si5443DC
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Original |
si5443dcan60912-jun-0749468 | |
Si5443DCContextual Info: SPICE Device Model Si5443DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si5443dc18-jul-08 | |
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Contextual Info: Si5443DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (Ω) ID (A) 0.065 @ VGS = -4.5 V 4.9 0.074 @ VGS = -3.6 V 4.6 0.110 @ VGS = -2.5 V 3.8 S 1206-8 ChipFETt 1 D D G D D D D Marking Code G BB XX S Lot Traceability |
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si5443dcsi5443dc-t108-apr-05 | |
Si5443DCContextual Info: Si5443DC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "4.9 0.074 @ VGS = –3.6 V "4.6 0.110 @ VGS = –2.5 V "3.8 S 1206-8 ChipFET 1 D D G D D D D Marking Code G BB XX |
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si5443dcs-99362--rev22-nov-99 | |
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Contextual Info: Si5443DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V ± 4.9 0.074 at VGS = - 3.6 V ± 4.6 0.110 at VGS = - 2.5 V ± 3.8 • Halogen-free According to IEC 61249-2-21 Available |
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si5443dcsi5443dc-t1-e3si5443dc-t1-ge32002/95/ec+3 | |
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Contextual Info: Si5443DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V ± 4.9 0.074 at VGS = - 3.6 V ± 4.6 0.110 at VGS = - 2.5 V ± 3.8 • Halogen-free According to IEC 61249-2-21 Available |
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si5443dcsi5443dc-t1-e3si5443dc-t1-ge32011/65/eu+2 | |
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Contextual Info: Si5443DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (Ω) ID (A) 0.065 @ VGS = -4.5 V 4.9 0.074 @ VGS = -3.6 V 4.6 0.110 @ VGS = -2.5 V 3.8 S 1206-8 ChipFETt 1 D D G D D D D Marking Code G BB XX S Lot Traceability |
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si5443dcsi5443dc-t118-jul-08 | |
Si5443DC
Abstract: SI5443DC-T1-E3
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Original |
si5443dcsi5443dc-t1-e3si5443dc-t1-ge318-jul-08 | |
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Contextual Info: Si5443DC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "4.9 0.074 @ VGS = –3.6 V "4.6 0.110 @ VGS = –2.5 V "3.8 S 1206-8 ChipFET 1 D D G D D D D Marking Code G BB XX |
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si5443dcs-99362--rev22-nov-99 | |
Si5443DC
Abstract: Si5443DC-T1 s-12068 33
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Original |
si5443dcsi5443dc-t1s-21251--rev05-aug-02+1 | |
Si5443DCContextual Info: SPICE Device Model Si5443DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
si5443dc27-mar-03 | |
Si5443DCContextual Info: SPICE Device Model Si5443DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si5443dcs-52525rev12-dec-05 | |
VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
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si4831dysi4833dysi4852dysi4816dy+14 | |
GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
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si9165si9169600-matssop-20+12 | |
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