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    SI5443DC Search Results

    SI5443DC Datasheets (7)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    Si5443DC
    Vishay Intertechnology P-Channel 2.5-V (G-S) MOSFET Original PDF 77.28KB 4
    SI5443DC
    Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET Original PDF 77.28KB 4
    SI5443DC
    Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET Original PDF 102.56KB 4
    Si5443DC SPICE Device Model
    Vishay P-Channel 2.5-V (G-S) MOSFET Original PDF 196.43KB 3
    SI5443DC-T1
    Vishay Intertechnology P-Channel 2.5-V (G-S) MOSFET Original PDF 77.28KB 4
    SI5443DC-T1-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 3.6A 1206-8 Original PDF 9
    SI5443DC-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 3.6A 1206-8 Original PDF 9
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    SI5443DC Price and Stock

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    Vishay Intertechnologies SI5443DC-T1-GE3

    MOSFETs 20V 4.9A 2.5W 65mohm @ 4.5V
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    Mouser Electronics SI5443DC-T1-GE3
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    • 10000 $0.56
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    Vishay Siliconix SI5443DC-T1

    SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3.6A I(D), 1-ELEMENT, P-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components () SI5443DC-T1 2,340
    • 1 $1.33
    • 10 $1.33
    • 100 $1.33
    • 1000 $0.35
    • 10000 $0.33
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    SI5443DC-T1 147
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    Vishay Intertechnologies SI5443DC-T1

    SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3.6A I(D), 1-ELEMENT, P-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI5443DC-T1 139
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    SI5443DC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    49468

    Abstract: AN609 Si5443DC
    Contextual Info: Si5443DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    si5443dcan60912-jun-0749468 PDF

    Si5443DC

    Contextual Info: SPICE Device Model Si5443DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    si5443dc18-jul-08 PDF

    Contextual Info: Si5443DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (Ω) ID (A) 0.065 @ VGS = -4.5 V 4.9 0.074 @ VGS = -3.6 V 4.6 0.110 @ VGS = -2.5 V 3.8 S 1206-8 ChipFETt 1 D D G D D D D Marking Code G BB XX S Lot Traceability


    Original
    si5443dcsi5443dc-t108-apr-05 PDF

    Si5443DC

    Contextual Info: Si5443DC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "4.9 0.074 @ VGS = –3.6 V "4.6 0.110 @ VGS = –2.5 V "3.8 S 1206-8 ChipFET 1 D D G D D D D Marking Code G BB XX


    Original
    si5443dcs-99362--rev22-nov-99 PDF

    Contextual Info: Si5443DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V ± 4.9 0.074 at VGS = - 3.6 V ± 4.6 0.110 at VGS = - 2.5 V ± 3.8 • Halogen-free According to IEC 61249-2-21 Available


    Original
    si5443dcsi5443dc-t1-e3si5443dc-t1-ge32002/95/ec+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: Si5443DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V ± 4.9 0.074 at VGS = - 3.6 V ± 4.6 0.110 at VGS = - 2.5 V ± 3.8 • Halogen-free According to IEC 61249-2-21 Available


    Original
    si5443dcsi5443dc-t1-e3si5443dc-t1-ge32011/65/eu+22002/95/ec12-mar-12 PDF

    Contextual Info: Si5443DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (Ω) ID (A) 0.065 @ VGS = -4.5 V 4.9 0.074 @ VGS = -3.6 V 4.6 0.110 @ VGS = -2.5 V 3.8 S 1206-8 ChipFETt 1 D D G D D D D Marking Code G BB XX S Lot Traceability


    Original
    si5443dcsi5443dc-t118-jul-08 PDF

    Si5443DC

    Abstract: SI5443DC-T1-E3
    Contextual Info: Si5443DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V ± 4.9 0.074 at VGS = - 3.6 V ± 4.6 0.110 at VGS = - 2.5 V ± 3.8 • Halogen-free According to IEC 61249-2-21 Available


    Original
    si5443dcsi5443dc-t1-e3si5443dc-t1-ge318-jul-08 PDF

    Contextual Info: Si5443DC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "4.9 0.074 @ VGS = –3.6 V "4.6 0.110 @ VGS = –2.5 V "3.8 S 1206-8 ChipFET 1 D D G D D D D Marking Code G BB XX


    Original
    si5443dcs-99362--rev22-nov-99 PDF

    Si5443DC

    Abstract: Si5443DC-T1 s-12068 33
    Contextual Info: Si5443DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (Ω) ID (A) 0.065 @ VGS = -4.5 V 4.9 0.074 @ VGS = -3.6 V 4.6 0.110 @ VGS = -2.5 V 3.8 S 1206-8 ChipFETt 1 D D G D D D D Marking Code G BB XX S Lot Traceability


    Original
    si5443dcsi5443dc-t1s-21251--rev05-aug-02+1s-12068 33 PDF

    Si5443DC

    Contextual Info: SPICE Device Model Si5443DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    si5443dc27-mar-03 PDF

    Si5443DC

    Contextual Info: SPICE Device Model Si5443DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    si5443dcs-52525rev12-dec-05 PDF

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original
    si4831dysi4833dysi4852dysi4816dy+1410singlevn50300lvn50300tot-23vn66afdvn10klsmosfet bs250si4730sup85n03-04psi4835dysi5504si3459dvsup65p06sub75p05 PDF

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original
    si9165si9169600-matssop-20+12msop-10sip1759gs 069si5902dc spice device modeltsop6 marking 312sc89-6si7705dnsi7100dnsi3865bdvsi5947dusi3861bdv1212-8 PDF