SI5445BDC Search Results

SI5445DC-T1

Abstract: 1206 8 ChipFET Si5445BDC Si5445DC
Contextual Info: Specification Comparison Vishay Siliconix Si5445BDC vs. Si5445DC Description: P-Channel, 1.8 V G-S MOSFET Package: 1206-8 ChipFET Pin Out: Identical Part Number Replacements: Si5445BDC-T1-E3 Replaces Si5445DC-T1-E3 Si5445BDC-T1 Replaces Si5445DC-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

VISHAY MARKING BM

Abstract: Si5445BDC
Contextual Info: Si5445BDC Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.033 at VGS = - 4.5 V - 7.1 0.043 at VGS = - 2.5 V - 6.2 0.060 at VGS = - 1.8 V - 5.3 Qg (Typ.) 14 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si5445BDC Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.033 at VGS = - 4.5 V - 7.1 0.043 at VGS = - 2.5 V - 6.2 0.060 at VGS = - 1.8 V - 5.3 Qg (Typ.) 14 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si5445BDC New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 FEATURES rDS(on) (W) ID (A) 0.033 @ VGS = −4.5 V −7.1 0.043 @ VGS = −2.5 V −6.2 0.060 @ VGS = −1.8 V −5.3 D TrenchFETr Power MOSFET Qg (Typ) 14 1206-8 ChipFETr

Si5445BDC

Contextual Info: Si5445BDC New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 FEATURES rDS(on) (W) ID (A) 0.033 @ VGS = −4.5 V −7.1 0.043 @ VGS = −2.5 V −6.2 0.060 @ VGS = −1.8 V −5.3 D TrenchFETr Power MOSFET Qg (Typ) 14 1206-8 ChipFETr

A2V-16

Contextual Info: Si5445BDC Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.033 at VGS = - 4.5 V - 7.1 0.043 at VGS = - 2.5 V - 6.2 0.060 at VGS = - 1.8 V - 5.3 Qg (Typ.) 14 • Halogen-free According to IEC 61249-2-21

9952

Abstract: 12460 AN609 Si5445BDC
Contextual Info: Si5445BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si5445BDC Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.033 at VGS = - 4.5 V - 7.1 0.043 at VGS = - 2.5 V - 6.2 0.060 at VGS = - 1.8 V - 5.3 Qg (Typ.) 14 • Halogen-free According to IEC 61249-2-21

Si5445BDC

Abstract: Si5445DC Si5445DC-T1
Contextual Info: Specification Comparison Vishay Siliconix Si5445BDC vs. Si5445DC Description: Package: Pin Out: P-Channel, 1.8-V G-S MOSFET 1206-8 ChipFET Identical Part Number Replacements: Si5445BDC-T1-E3 Replaces Si5445DC-T1-E3 Si5445BDC-T1-E3 Replaces Si5445DC-T1

VISHAY MARKING BM

Abstract: Si5445BDC
Contextual Info: Si5445BDC New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 FEATURES rDS(on) (W) ID (A) 0.033 @ VGS = −4.5 V −7.1 0.043 @ VGS = −2.5 V −6.2 0.060 @ VGS = −1.8 V −5.3 D TrenchFETr Power MOSFET Qg (Typ) 14 1206-8 ChipFETr

A1818

Abstract: Si5445BDC
Contextual Info: SPICE Device Model Si5445BDC Vishay Siliconix P-Channel 1.8V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si5445BDC

Contextual Info: Si5445BDC Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.033 at VGS = - 4.5 V - 7.1 0.043 at VGS = - 2.5 V - 6.2 0.060 at VGS = - 1.8 V - 5.3 Qg (Typ.) 14 • Halogen-free According to IEC 61249-2-21

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585