SI5442DU Search Results
SI5442DU Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SI5442DU-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 25A PPAK CHIPFET | Original | 9 |
SI5442DU Price and Stock
Vishay Siliconix SI5442DU-T1-GE3MOSFET N-CH 20V 25A PPAK |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI5442DU-T1-GE3 | Digi-Reel | 39,133 | 1 |
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SI5442DU-T1-GE3 | Bulk | 300 |
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Vishay Intertechnologies SI5442DU-T1-GE3Trans MOSFET N-CH 20V 12.4A 8-Pin PowerPAK ChipFET T/R - Tape and Reel (Alt: SI5442DU-T1-GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI5442DU-T1-GE3 | Reel | 32 Weeks | 3,000 |
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SI5442DU-T1-GE3 | 15,314 |
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SI5442DU-T1-GE3 | 2,790 | 29 |
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SI5442DU-T1-GE3 | Cut Strips | 2,790 | 32 Weeks | 1 |
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SI5442DU-T1-GE3 | Reel | 3,000 | 3,000 |
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SI5442DU-T1-GE3 | 17 Weeks | 3,000 |
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SI5442DU-T1-GE3 | 33 Weeks | 3,000 |
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Vishay Huntington SI5442DU-T1-GE3MOSFET N-CH 20V 25A PPAK / N-Channel 20 V 25A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount PowerPAK® ChipFet Single |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI5442DU-T1-GE3 | 29,100 |
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SI5442DU Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si5442DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. (A)a ID 0.0100 at VGS = 4.5 V 25 0.0115 at VGS = 2.5 V 25 0.0135 at VGS = 1.8 V 25 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package |
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Si5442DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si5442DU Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. (A)a ID 0.0100 at VGS = 4.5 V 25 0.0115 at VGS = 2.5 V 25 0.0135 at VGS = 1.8 V 25 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package |
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Si5442DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si5442DU Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. (A)a ID 0.0100 at VGS = 4.5 V 25 0.0115 at VGS = 2.5 V 25 0.0135 at VGS = 1.8 V 25 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package |
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Si5442DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si5442DU Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. (A)a ID 0.0100 at VGS = 4.5 V 25 0.0115 at VGS = 2.5 V 25 0.0135 at VGS = 1.8 V 25 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package |
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Si5442DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model Si5442DU www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C |
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Si5442DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
si5442
Abstract: C6025A
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Si5442DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 si5442 C6025A | |
Contextual Info: Si5442DU_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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Si5442DU AN609, 4785m 2168u 9352m 5110u 7802m 6700m 1401u 09-Jan-13 | |
Si542Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets MOSFETs – 3 W Maximum PD in Compact 3 mm x 1.8 mm Outline PowerPAK ChipFET® Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints Key Benefits • Advanced thermal performance in a compact 3 mm by 1.8 mm footprint |
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Si5936DU Si5944DU Si5999EDU Si5997DU Si5517DU VMN-PT0102-1402 Si542 |