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    SI4980DY Search Results

    SI4980DY Datasheets (7)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    Si4980DY
    Unknown Metal oxide N-channel FET, Enhancement Type Original PDF 37.06KB 4
    Si4980DY
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    Si4980DY
    Vishay Intertechnology Dual N-Channel 80-V (D-S) MOSFET Original PDF 62.62KB 4
    SI4980DY
    Vishay Siliconix Dual N-Channel 80-V (D-S) MOSFET Original PDF 62.62KB 4
    Si4980DY SPICE Device Model
    Vishay Dual N-Channel 80-V (D-S) MOSFET Original PDF 220.29KB 3
    SI4980DY-T1
    Vishay Intertechnology Dual N-Channel 80-V (D-S) MOSFET Original PDF 62.62KB 4
    Si4980DY-T1
    Vishay Siliconix Dual N-Channel 80-V (D-S) MOSFET Original PDF 37.05KB 4
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    SI4980DY Price and Stock

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    Vishay Siliconix SI4980DY-T1-E3

    MOSFET, DUAL, N-CHANNEL, 80V, 3.7A, 2W, SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SI4980DY-T1-E3 Bulk 2,500
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    • 10000 $2.12
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    Vishay Intertechnologies SI4980DYT1-E3

    Trans MOSFET N-CH 80V 3.7A 8-Pin SOIC N T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI4980DYT1-E3 7,110
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    Vishay Siliconix SI4980DY-T1

    Trans MOSFET N-CH 80V 3.7A 8-Pin SOIC N T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI4980DY-T1 895
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    Vishay Siliconix SI4980DY

    Trans MOSFET N-CH 80V 3.7A 8-Pin SOIC N
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI4980DY 30
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    Vishay Huntington SI4980DY-T1-E3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI4980DY-T1-E3 60,000
    • 1 -
    • 10 -
    • 100 $0.98
    • 1000 $0.65
    • 10000 $0.65
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    SI4980DY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Si4980DY

    Contextual Info: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.075 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original
    si4980dy2002/95/ecsi4980dy-t1-e3si4980dy-t1-ge3+32011/65/eujs709a02-oct-12 PDF

    Si4980DY

    Contextual Info: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.075 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original
    si4980dy2002/95/ecsi4980dy-t1-e3si4980dy-t1-ge3+22011/65/eu12-mar-12 PDF

    Si4980DY

    Abstract: Si4980DY-T1-E3
    Contextual Info: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.075 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original
    si4980dy2002/95/ecsi4980dy-t1-e3si4980dy-t1-ge3+111-mar-11 PDF

    Si4980DY

    Contextual Info: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.075 @ VGS = 10 V 3.7 0.095 @ VGS = 6.0 V 3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View Ordering Information: Si4980DY Si4980DY-T1 (with Tape and Reel)


    Original
    si4980dysi4980dy-t118-jul-08 PDF

    Si4980DY

    Contextual Info: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 RDS(ON) (W) ID (A) 0.075 @ VGS = 10 V "3.7 0.095 @ VGS = 6.0 V "3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original
    si4980dys-53722--rev25-aug-97 PDF

    Si4980DY

    Abstract: Si4980DY-T1
    Contextual Info: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.075 @ VGS = 10 V 3.7 0.095 @ VGS = 6.0 V 3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View Ordering Information: Si4980DY Si4980DY-T1 (with Tape and Reel)


    Original
    si4980dysi4980dy-t1s-03950--rev26-may-03 PDF

    Si4980DY

    Contextual Info: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.075 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original
    si4980dy2002/95/ecsi4980dy-t1-e3si4980dy-t1-ge3+111-mar-11 PDF

    Si4980DY

    Abstract: Si4980DY-T1
    Contextual Info: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.075 @ VGS = 10 V 3.7 0.095 @ VGS = 6.0 V 3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View Ordering Information: Si4980DY Si4980DY-T1 (with Tape and Reel)


    Original
    si4980dysi4980dy-t108-apr-05 PDF

    Si4980DY

    Contextual Info: Si4980DY Dual N-Channel 80-V Rated MOSFET Product Summary VDS V 80 rDS(on) (W) ID (A) 0.075 @ VGS = 10 V "3.7 0.095 @ VGS = 6.0 V "3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original
    si4980dys-49460--rev17-dec-95 PDF

    AN609

    Abstract: Si4980DY 68117
    Contextual Info: Si4980DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    si4980dyan60912-jun-0768117 PDF

    Si4980DY

    Contextual Info: SPICE Device Model Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    si4980dy18-jul-08 PDF

    Si4980DY

    Abstract: 71014
    Contextual Info: SPICE Device Model Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    si4980dys-51890rev12-sep-0571014 PDF

    Si4980DY

    Contextual Info: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.075 @ VGS = 10 V "3.7 0.095 @ VGS = 6.0 V "3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original
    si4980dys-5694423-nov-98 PDF

    Si4980DY

    Contextual Info: Si4980DY Dual N-Channel 80-V Rated MOSFET Product Summary VDS V 80 rDS(on) (W) ID (A) 0.075 @ VGS = 10 V "3.7 0.095 @ VGS = 6.0 V "3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original
    si4980dys-53722--rev25-aug-97 PDF

    Si4980DY

    Abstract: 71014
    Contextual Info: \\\ SPICE Device Model Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    si4980dy0-to-10v25-mar-0271014 PDF

    Si4980DY

    Abstract: Si4980DY-T1-E3
    Contextual Info: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.075 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original
    si4980dy2002/95/ecsi4980dy-t1-e3si4980dy-t1-ge3+118-jul-08 PDF

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


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    an607si9137ssop-28si9910+12si9912si991310-oct-0271917level logic mosfet transistor so-8offline switchmodesi9110siliconix an607an707si4406dypowerpak so-8si2301ds PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original
    gp-20fsq510 equivalentbta12 6008bta16 6008+7zigbee interface with avr atmega16precision triac control thermostatthyristor t 558 f eupecgw 5819 diodetransistor a564a564 transistorbsm25gp120 b2 PDF

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original
    si4831dysi4833dysi4852dysi4816dy+1410singlevn50300lvn50300tot-23vn66afdvn10klsmosfet bs250si4730sup85n03-04psi4835dysi5504si3459dvsup65p06sub75p05 PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


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    2n70002n70022sj3772sj378+162sj3802sj4012sj4022sj4072sj4122sj419yta630mtw14p20bss125mtaj30n06hd2sk2837 equivalentsmu10p05smp60n06 replacementste180n10rfh75n05eirfd620 PDF

    ixfh26n60q

    Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
    Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY


    OCR Scan
    si4466dysi4966dysi9925dysi9942dy+162sk1388t0220abirf7319irf7413irf7455irl2203nixfh26n60q2sk23332sk2761irf1405buz345bss89irfp250np9nb60irfp260n2sk2671 PDF

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Contextual Info: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


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    sip41109sip41110sip4111175/2a+10q406 transistorsi9120equivalent q406q406sum65n20-30si3456bdv spice device modelsud*50n025si4304dy0038 tsopsi2325ds PDF

    Contextual Info: Tem ic SÌ4980DY S e m i c o n d u c t o r s Dual N-Channel 80-V Rated MOSFET Product Summary V d s V 80 rDS(on) ( ß ) I d (A) 0.075 @ VGS = 10 V ±3.7 0.095 @ VGS = 6.0 V ±3.2 po'«0 SO-8 «J Top View N-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)


    OCR Scan
    4980dys-49460--rev17-dec-95 PDF

    rtd pt100 interface to 8051

    Abstract: 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm
    Contextual Info: INDEX Order Code Description _ 102-271 794-740 102-246 794-752 101-930 102-283 101-886 101-953 _ _ 688-137 688-149 _ _ 597-387 705-536 473-728 473-753 473-730 473-741 473-881 _ _ _ 690-648 690-703 690-636 791-180 _ 791-805 _ 101-564 101-540 101-552 101-515


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    opa340paads7816p12-bit200khz+15opa2337paads7822pina125uaopa680uopa547frtd pt100 interface to 805124v 20a siemens battery chargerlm2560smd 58a transistor 6-pinpic 16f84 pwm circuitscr control light intensity using 80518051 microwave ovendesign of fm transmitter final year projectproject pic 16f84 pwmwhite led" 5mm PDF