SI4980DY Search Results
SI4980DY Datasheets (7)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| Si4980DY | Unknown | Metal oxide N-channel FET, Enhancement Type | Original | 37.06KB | 4 | ||
| Si4980DY | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| Si4980DY | Vishay Intertechnology | Dual N-Channel 80-V (D-S) MOSFET | Original | 62.62KB | 4 | ||
| SI4980DY | Vishay Siliconix | Dual N-Channel 80-V (D-S) MOSFET | Original | 62.62KB | 4 | ||
| Si4980DY SPICE Device Model | Vishay | Dual N-Channel 80-V (D-S) MOSFET | Original | 220.29KB | 3 | ||
| SI4980DY-T1 | Vishay Intertechnology | Dual N-Channel 80-V (D-S) MOSFET | Original | 62.62KB | 4 | ||
| Si4980DY-T1 | Vishay Siliconix | Dual N-Channel 80-V (D-S) MOSFET | Original | 37.05KB | 4 |
SI4980DY Price and Stock
Vishay Siliconix SI4980DY-T1-E3MOSFET, DUAL, N-CHANNEL, 80V, 3.7A, 2W, SO-8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4980DY-T1-E3 | Bulk | 2,500 |
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Get Quote | ||||||
Vishay Intertechnologies SI4980DYT1-E3Trans MOSFET N-CH 80V 3.7A 8-Pin SOIC N T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4980DYT1-E3 | 7,110 |
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Vishay Siliconix SI4980DY-T1Trans MOSFET N-CH 80V 3.7A 8-Pin SOIC N T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4980DY-T1 | 895 |
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Vishay Siliconix SI4980DYTrans MOSFET N-CH 80V 3.7A 8-Pin SOIC N |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4980DY | 30 |
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Vishay Huntington SI4980DY-T1-E3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4980DY-T1-E3 | 60,000 |
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Buy Now | |||||||
SI4980DY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
Si4980DYContextual Info: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.075 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC |
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si4980dy2002/95/ecsi4980dy-t1-e3si4980dy-t1-ge3+3 | |
Si4980DYContextual Info: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.075 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC |
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si4980dy2002/95/ecsi4980dy-t1-e3si4980dy-t1-ge3+2 | |
Si4980DY
Abstract: Si4980DY-T1-E3
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si4980dy2002/95/ecsi4980dy-t1-e3si4980dy-t1-ge3+1 | |
Si4980DYContextual Info: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.075 @ VGS = 10 V 3.7 0.095 @ VGS = 6.0 V 3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View Ordering Information: Si4980DY Si4980DY-T1 (with Tape and Reel) |
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si4980dysi4980dy-t118-jul-08 | |
Si4980DYContextual Info: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 RDS(ON) (W) ID (A) 0.075 @ VGS = 10 V "3.7 0.095 @ VGS = 6.0 V "3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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si4980dys-53722--rev25-aug-97 | |
Si4980DY
Abstract: Si4980DY-T1
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si4980dysi4980dy-t1s-03950--rev26-may-03 | |
Si4980DYContextual Info: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.075 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC |
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si4980dy2002/95/ecsi4980dy-t1-e3si4980dy-t1-ge3+1 | |
Si4980DY
Abstract: Si4980DY-T1
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si4980dysi4980dy-t108-apr-05 | |
Si4980DYContextual Info: Si4980DY Dual N-Channel 80-V Rated MOSFET Product Summary VDS V 80 rDS(on) (W) ID (A) 0.075 @ VGS = 10 V "3.7 0.095 @ VGS = 6.0 V "3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) |
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si4980dys-49460--rev17-dec-95 | |
AN609
Abstract: Si4980DY 68117
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si4980dyan60912-jun-0768117 | |
Si4980DYContextual Info: SPICE Device Model Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si4980dy18-jul-08 | |
Si4980DY
Abstract: 71014
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Original |
si4980dys-51890rev12-sep-0571014 | |
Si4980DYContextual Info: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.075 @ VGS = 10 V "3.7 0.095 @ VGS = 6.0 V "3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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si4980dys-5694423-nov-98 | |
Si4980DYContextual Info: Si4980DY Dual N-Channel 80-V Rated MOSFET Product Summary VDS V 80 rDS(on) (W) ID (A) 0.075 @ VGS = 10 V "3.7 0.095 @ VGS = 6.0 V "3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) |
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si4980dys-53722--rev25-aug-97 | |
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Si4980DY
Abstract: 71014
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si4980dy0-to-10v25-mar-0271014 | |
Si4980DY
Abstract: Si4980DY-T1-E3
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si4980dy2002/95/ecsi4980dy-t1-e3si4980dy-t1-ge3+1 | |
71917
Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
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an607si9137ssop-28si9910+12 | |
FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
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gp-20fsq510 equivalentbta12 6008bta16 6008+7 | |
VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
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si4831dysi4833dysi4852dysi4816dy+14 | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
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2n70002n70022sj3772sj378+16 | |
ixfh26n60q
Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
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OCR Scan |
si4466dysi4966dysi9925dysi9942dy+16 | |
q406 transistor
Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
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sip41109sip41110sip4111175/2a+10 | |
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Contextual Info: Tem ic SÌ4980DY S e m i c o n d u c t o r s Dual N-Channel 80-V Rated MOSFET Product Summary V d s V 80 rDS(on) ( ß ) I d (A) 0.075 @ VGS = 10 V ±3.7 0.095 @ VGS = 6.0 V ±3.2 po'«0 SO-8 «J Top View N-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted) |
OCR Scan |
4980dys-49460--rev17-dec-95 | |
rtd pt100 interface to 8051
Abstract: 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm
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opa340paads7816p12-bit200khz+15 | |