SI4953 Search Results
SI4953 Datasheets (13)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| Si4953ADY | Vishay Intertechnology | Dual P-Channel 30-V (D-S) MOSFET | Original | 72.56KB | 4 | ||
| SI4953ADY | Vishay Siliconix | MOSFETs | Original | 54.71KB | 4 | ||
| Si4953ADY SPICE Device Model | Vishay | Dual P-Channel 30-V (D-S) MOSFET | Original | 204.28KB | 3 | ||
| SI4953ADY-T1 | Vishay Intertechnology | Dual P-Channel 30-V (D-S) MOSFET | Original | 72.56KB | 4 | ||
| SI4953ADY-T1-E3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 30V 3.7A 8-SOIC | Original | 8 | |||
| SI4953ADY-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 30V 3.7A 8-SOIC | Original | 8 | |||
| SI4953DY | Fairchild Semiconductor | Dual P-Channel Enhancement Mode MOSFET | Original | 428.57KB | 6 | ||
| SI4953DY | Fairchild Semiconductor | Dual P-Channel Enhancement Mode MOSFET | Original | 252.49KB | 3 | ||
| Si4953DY | Fairchild Semiconductor | Dual P-Channel Enhancement Mode MOSFET | Original | 410.64KB | 6 | ||
| Si4953DY | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| SI4953DY | Vishay Telefunken | Dual P-channel 30-v(d-s) Mosfet | Original | 40.97KB | 4 | ||
| SI4953DY_NL | Fairchild Semiconductor | Dual P-Channel Logic Level PowerTrench MOSFET | Original | 252.49KB | 3 | ||
| Si4953DY-T1 | Vishay Siliconix | Dual P-Channel 30-V(D-S) MOSFET | Original | 40.98KB | 4 |
SI4953 Price and Stock
FAIRCHILD SI4953DYSI4953DY |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4953DY | 2,500 | 373 |
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Buy Now | ||||||
onsemi SI4953DYTransistor MOSFET Array Dual P-Channel 30V 4.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4953DY) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4953DY | Tape & Reel | 2,500 |
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Get Quote | ||||||
Vishay Siliconix SI4953ADY-T1-E3MOSFET 2P-CH 30V 3.7A 8-SOIC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4953ADY-T1-E3 | Bulk | 2,500 |
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Get Quote | ||||||
Fluke Calibration GLD-OFP-200-SI (4953235)1 YR GOLD SUPPORT, OFP-200-SI |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GLD-OFP-200-SI (4953235) | Bulk | 4 Weeks | 1 |
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Get Quote | |||||
Fluke Calibration GLD3-OFP-200-SI (4953339)3 YR GOLD SUPPORT, OFP-200-SI |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GLD3-OFP-200-SI (4953339) | Bulk | 4 Weeks | 1 |
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Get Quote | |||||
SI4953 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si4953ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.053 at VGS = - 10 V - 4.9 0.090 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs |
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si4953ady2002/95/ecsi4953ady-t1-e3si4953ady-t1-ge3+2 | |
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Contextual Info: Si4953DY Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching |
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si4953dy | |
Si64
Abstract: 51361 Si4435DY Si4953DY Si6435DQ Si9435DY Si94
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si9435dysi4435dysi4953dysi6435dq+5 | |
0248
Abstract: AN609 Si4953ADY 279011
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si4953adyan60919-mar-070248+1 | |
Si4953ADY
Abstract: Si4953ADY SPICE Device Model
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si4953adys-60073rev23-jan-06si4953ady spice device model | |
Si4435DY
Abstract: Si4953DY Si6435DQ Si9430DY
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si9430dysi4435dysi4953dysi6435dq+2 | |
Si4953ADYContextual Info: SPICE Device Model Si4953ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si4953ady0-to-10v12-mar-02 | |
SI4953ADYContextual Info: Si4953ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.053 at VGS = - 10 V - 4.9 0.090 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs |
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si4953ady2002/95/ecsi4953ady-t1-e3si4953ady-t1-ge3+2 | |
Si9947DY
Abstract: Si4947DY Si4953DY Si6955DQ si6955
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si9947dysi4947dysi4953dysi6955dq+3 | |
Si4435DY
Abstract: Si4953DY Si6435DQ Si9435DY
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si9435dysi4435dysi4953dysi6435dq+2 | |
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Contextual Info: Temic Si4953DY Semiconductors Dual P-Channel 30-V D-S Rated MOSFET Product Sum m ary VDS(V) 30 r DS(on) (£2) I d (A) 0.053 @ VGs = -10 V ±4.9 0.095 @ VGs = -4.5 V ±3.6 s2 9 Si o SO-8 6 Di 6 Di P-Channel MOSFET 6 6 d2 d2 P-Channel MOSFET Absolute M axim um Ratings (Ta = 25 °C Unless Otherwise Noted) |
OCR Scan |
si4953dys-4953406-oct-97dd17flflt | |
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Contextual Info: Si4953ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.053 at VGS = - 10 V - 4.9 0.090 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs |
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si4953ady2002/95/ecsi4953ady-t1-e3si4953ady-t1-ge3+3 | |
Si4953ADYContextual Info: Si4953ADY New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.053 @ VGS = –10 V –4.9 0.090 @ VGS = –4.5 V –3.7 –30 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 D2 P-Channel MOSFET |
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si4953ady08-apr-05 | |
Si4953DYContextual Info: Si4953DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.053 @ VGS = –10 V "4.9 0.095 @ VGS = –4.5 V "3.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET |
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si4953dys-47958--rev15-apr-96 | |
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Si4435DY
Abstract: Si4953DY Si6435DQ Si9435DY
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si9435dysi4435dysi4953dysi6435dq+2 | |
S-49534
Abstract: Si4953DY
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si4953dys-49534--rev06-oct-97s-49534 | |
Si4435DY
Abstract: Si4953DY Si6435DQ Si9430DY
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si9430dysi4435dysi4953dysi6435dq+2 | |
Si4953ADYContextual Info: SPICE Device Model Si4953ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si4953ady18-jul-08 | |
SI4953ADYContextual Info: Si4953ADY New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.053 @ VGS = –10 V "4.9 0.090 @ VGS = –4.5 V "3.7 –30 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 D2 P-Channel MOSFET |
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si4953adys-999343--rev22-nov-99 | |
Si4953ADY
Abstract: Si4953ADY-T1-E3 Si4953ADY-T1-GE3
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si4953ady2002/95/ecsi4953ady-t1-e3si4953ady-t1-ge3+1 | |
Si4435DY
Abstract: Si4953DY Si6435DQ Si9435DY 70513 51361
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si9435dysi4435dysi4953dysi6435dq+4 | |
Si4953DYContextual Info: Si4953DY* Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching |
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si4953dy | |
Si4953DYContextual Info: Si4953DY Siliconix Dual PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -30 rDS(on) (W) ID (A) 0.053 @ VGS = -10 V "4.9 0.095 @ VGS = -4.5 V "3.6 S1 S2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2 D1 D1 PĆChannel MOSFET D2 D2 PĆChannel MOSFET |
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si4953dys42234rev | |
SI9947DY
Abstract: Si4947DY Si4953DY Si6955DQ
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si9947dysi4947dysi4953dysi6955dq+2 | |