SI4953 Search Results

SI4953 Datasheets (13)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
Si4953ADY	Vishay Intertechnology	Dual P-Channel 30-V (D-S) MOSFET	Original	PDF	72.56KB	4
SI4953ADY	Vishay Siliconix	MOSFETs	Original	PDF	54.71KB	4
Si4953ADY SPICE Device Model	Vishay	Dual P-Channel 30-V (D-S) MOSFET	Original	PDF	204.28KB	3
SI4953ADY-T1	Vishay Intertechnology	Dual P-Channel 30-V (D-S) MOSFET	Original	PDF	72.56KB	4
SI4953ADY-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 30V 3.7A 8-SOIC	Original	PDF		8
SI4953ADY-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 30V 3.7A 8-SOIC	Original	PDF		8
SI4953DY	Fairchild Semiconductor	Dual P-Channel Enhancement Mode MOSFET	Original	PDF	428.57KB	6
SI4953DY	Fairchild Semiconductor	Dual P-Channel Enhancement Mode MOSFET	Original	PDF	252.49KB	3
Si4953DY	Fairchild Semiconductor	Dual P-Channel Enhancement Mode MOSFET	Original	PDF	410.64KB	6
Si4953DY	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
SI4953DY	Vishay Telefunken	Dual P-channel 30-v(d-s) Mosfet	Original	PDF	40.97KB	4
SI4953DY_NL	Fairchild Semiconductor	Dual P-Channel Logic Level PowerTrench MOSFET	Original	PDF	252.49KB	3
Si4953DY-T1	Vishay Siliconix	Dual P-Channel 30-V(D-S) MOSFET	Original	PDF	40.98KB	4

SI4953 Price and Stock

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Rochester Electronics LLC SI4953DY MOSFET 2P-CH 30V 4.9A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4953DY	Bulk			358	1 - 10 - 100 - 1000 $0.84 10000 $0.84	Buy Now
Vishay Siliconix SI4953ADY-T1-E3 MOSFET 2P-CH 30V 3.7A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SI4953ADY-T1-E3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI4953ADY-T1-E3	Digi-Reel			1	1 $0.81 10 $0.81 100 $0.81 1000 $0.81 10000 $0.81	Buy Now
Vishay Siliconix SI4953ADY-T1-GE3 MOSFET 2P-CH 30V 3.7A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SI4953ADY-T1-GE3	Digi-Reel			1	1 $0.81 10 $0.81 100 $0.81 1000 $0.81 10000 $0.81	Buy Now
	SI4953ADY-T1-GE3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi SI4953DY Transistor MOSFET Array Dual P-Channel 30V 4.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4953DY)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI4953DY	Reel			2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Verical	SI4953DY		2,500		373	1 - 10 - 100 - 1000 $0.84 10000 $0.75	Buy Now
Vishay Intertechnologies SI4953DY-T1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI4953DY-T1		2,771			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SI4953 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Si4953ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.053 at VGS = - 10 V - 4.9 0.090 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	Si4953ADY 2002/95/EC Si4953ADY-T1-E3 Si4953ADY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: Si4953DY Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching	Original	Si4953DY	PDF
Si64 Abstract: 51361 Si4435DY Si4953DY Si6435DQ Si9435DY Si94 Contextual Info: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S	Original	Si9435DY Si4435DY Si4953DY Si6435DQ S-51361--Rev. 18-Dec-96 Si64 51361 Si94	PDF
0248 Abstract: AN609 Si4953ADY 279011 Contextual Info: Si4953ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4953ADY AN609 19-Mar-07 0248 279011	PDF
Si4953ADY Abstract: Si4953ADY SPICE Device Model Contextual Info: SPICE Device Model Si4953ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4953ADY S-60073Rev. 23-Jan-06 Si4953ADY SPICE Device Model	PDF
Si4435DY Abstract: Si4953DY Si6435DQ Si9430DY Contextual Info: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S	Original	Si9430DY Si4435DY Si4953DY Si6435DQ S-51360--Rev. 18-Dec-96	PDF
Si4953ADY Contextual Info: SPICE Device Model Si4953ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4953ADY 0-to-10V 12-Mar-02	PDF
SI4953ADY Contextual Info: Si4953ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.053 at VGS = - 10 V - 4.9 0.090 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	Si4953ADY 2002/95/EC Si4953ADY-T1-E3 Si4953ADY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Si9947DY Abstract: Si4947DY Si4953DY Si6955DQ si6955 Contextual Info: Si9947DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –10 V "3.5 0.19 @ VGS = –4.5 V "2.5 Recommended upgrade: Si4947DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6955DQ	Original	Si9947DY Si4947DY Si4953DY Si6955DQ S-47958--Rev. 15-Apr-96 si6955	PDF
Si4435DY Abstract: Si4953DY Si6435DQ Si9435DY Contextual Info: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ	Original	Si9435DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96	PDF
Contextual Info: Temic Si4953DY Semiconductors Dual P-Channel 30-V D-S Rated MOSFET Product Sum m ary VDS(V) 30 r DS(on) (£2) I d (A) 0.053 @ VGs = -10 V ±4.9 0.095 @ VGs = -4.5 V ±3.6 s2 9 Si o SO-8 6 Di 6 Di P-Channel MOSFET 6 6 d2 d2 P-Channel MOSFET Absolute M axim um Ratings (Ta = 25 °C Unless Otherwise Noted)	OCR Scan	Si4953DY S-49534â 06-Oct-97 DD17flflT	PDF
Contextual Info: Si4953ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.053 at VGS = - 10 V - 4.9 0.090 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	Si4953ADY 2002/95/EC Si4953ADY-T1-E3 Si4953ADY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si4953ADY Contextual Info: Si4953ADY New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.053 @ VGS = –10 V –4.9 0.090 @ VGS = –4.5 V –3.7 –30 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 D2 P-Channel MOSFET	Original	Si4953ADY 08-Apr-05	PDF
Si4953DY Contextual Info: Si4953DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.053 @ VGS = –10 V "4.9 0.095 @ VGS = –4.5 V "3.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET	Original	Si4953DY S-47958--Rev. 15-Apr-96	PDF

Si4435DY Abstract: Si4953DY Si6435DQ Si9435DY Contextual Info: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ	Original	Si9435DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96	PDF
S-49534 Abstract: Si4953DY Contextual Info: Si4953DY Dual P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.053 @ VGS = –10 V "4.9 0.095 @ VGS = –4.5 V "3.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET	Original	Si4953DY S-49534--Rev. 06-Oct-97 S-49534	PDF
Si4435DY Abstract: Si4953DY Si6435DQ Si9430DY Contextual Info: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S	Original	Si9430DY Si4435DY Si4953DY Si6435DQ S-51360--Rev. 18-Dec-96	PDF
Si4953ADY Contextual Info: SPICE Device Model Si4953ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4953ADY 18-Jul-08	PDF
SI4953ADY Contextual Info: Si4953ADY New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.053 @ VGS = –10 V "4.9 0.090 @ VGS = –4.5 V "3.7 –30 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 D2 P-Channel MOSFET	Original	Si4953ADY S-999343--Rev. 22-Nov-99	PDF
Si4953ADY Abstract: Si4953ADY-T1-E3 Si4953ADY-T1-GE3 Contextual Info: Si4953ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.053 at VGS = - 10 V - 4.9 0.090 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	Si4953ADY 2002/95/EC Si4953ADY-T1-E3 Si4953ADY-T1-GE3 11-Mar-11	PDF
Si4435DY Abstract: Si4953DY Si6435DQ Si9435DY 70513 51361 Contextual Info: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S	Original	Si9435DY Si4435DY Si4953DY Si6435DQ S-51361--Rev. 18-Dec-96 70513 51361	PDF
Si4953DY Contextual Info: Si4953DY* Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching	Original	Si4953DY	PDF
Si4953DY Contextual Info: Si4953DY Siliconix Dual PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -30 rDS(on) (W) ID (A) 0.053 @ VGS = -10 V "4.9 0.095 @ VGS = -4.5 V "3.6 S1 S2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2 D1 D1 PĆChannel MOSFET D2 D2 PĆChannel MOSFET	Original	Si4953DY S42234Rev.	PDF
SI9947DY Abstract: Si4947DY Si4953DY Si6955DQ Contextual Info: Si9947DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –10 V "3.5 0.19 @ VGS = –4.5 V "2.5 Recommended upgrade: Si4947DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6955DQ	Original	Si9947DY Si4947DY Si4953DY Si6955DQ S-47958--Rev. 15-Apr-96	PDF

SI4953 Search Results

SI4953 Datasheets (13)

SI4953 Price and Stock

Rochester Electronics LLC SI4953DY

Vishay Siliconix SI4953ADY-T1-E3

Vishay Siliconix SI4953ADY-T1-GE3

onsemi SI4953DY

Vishay Intertechnologies SI4953DY-T1

SI4953 Datasheets Context Search

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