SI48 Search Results

SI48 Datasheets (416)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI4800	NXP Semiconductors	N-channel TrenchMOS logic level FET	Original	PDF	91.22KB	12
Si4800	Philips Semiconductors	N-Channel Enhancement Mode Field-Effect Transistor	Original	PDF	98.86KB	13
SI4800	Philips Semiconductors	N-channel enhancement mode field-effect transistor	Original	PDF	98.86KB	13
SI4800,518	Philips Semiconductors	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 9A SOT96-1	Original	PDF		12
SI4800BDY	Vishay Siliconix	MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:6.5A; Current, Idm pulse:40A; Power, Pd:1.3W; Resistance, Rds on:0.0185R; SMD:1; Charge, gate p	Original	PDF	98.71KB	6
SI4800BDY	Vishay Siliconix	MOSFETs	Original	PDF	56.64KB	5
Si4800BDY SPICE Device Model	Vishay	N-Channel Reduced Qg, Fast Switching MOSFET	Original	PDF	184.84KB	3
SI4800BDY-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.5A 8-SOIC	Original	PDF		9
SI4800BDY-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.5A 8-SOIC	Original	PDF		9
Si4800DY	Vishay Intertechnology	N-Channel Reducded Q g , Fast Switching MOSFET	Original	PDF	68.04KB	4
SI4800DY	Vishay Telefunken	N-Channel 30-V (D-S) MOSFET	Original	PDF	41.71KB	4
Si4800DY SPICE Device Model	Vishay	N-Channel Reduced Qg, Fast Switching MOSFET	Original	PDF	206.08KB	3
SI4800DY-T1	Vishay Intertechnology	N-Channel Reducded Q g , Fast Switching MOSFET	Original	PDF	68.04KB	4
Si4802DY	Unknown	Metal oxide N-channel FET, Enhancement Type	Original	PDF	42.05KB	4

Si4802DY	Vishay Intertechnology	N-Channel 30-V (D-S) MOSFET	Original	PDF	69.3KB	4
SI4802DY	Vishay Siliconix	MOSFETs	Original	PDF	58.99KB	4
SI4802DY-T1	Vishay Intertechnology	N-Channel 30-V (D-S) MOSFET	Original	PDF	69.3KB	4
SI4804BDY	Vishay Siliconix	MOSFET, DUAL NN SO-8MOSFET, DUAL NN SO-8; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:7.5A; Current, Idm pulse:30A; Power, Pd:1.1W; Resistance, Rds on:0.022R; SMD:1;	Original	PDF	98.71KB	6
Si4804BDY	Vishay Siliconix	Dual N-Channel, 30-V (D-S) MOSFET Specification Comparison	Original	PDF	30.27KB	1
SI4804BDY	Vishay Siliconix	MOSFETs	Original	PDF	61.51KB	5

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SI48 Price and Stock

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Skyworks Solutions Inc SI4844-A10-GUR RF Receiver AM/FM/SW 24-Pin SSOP T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	SI4844-A10-GUR		112,305		7	1 - 10 $0.85 100 $0.85 1000 $0.85 10000 $0.85	Buy Now
Arrow Electronics	SI4844-A10-GUR		112,305	12 Weeks	1	1 $0.85 10 $0.85 100 $0.85 1000 $0.85 10000 $0.85	Buy Now
Skyworks Solutions Inc SI4820-A10-CU RF Receiver AM/FM 3.3V 24-Pin SSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	SI4820-A10-CU		20,496		181	1 - 10 - 100 - 1000 $1.86 10000 $1.75	Buy Now
Rochester Electronics	SI4820-A10-CU		20,496		1	1 - 10 - 100 $1.66 1000 $1.49 10000 $1.40	Buy Now
Skyworks Solutions Inc SI4836-A10-GSR RF Receiver AM/FM/SW 2.5V/3.3V 16-Pin SOIC T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	SI4836-A10-GSR		7,500		2,500	1 - 10 - 100 - 1000 - 10000 $1.11	Buy Now
Richardson RFPD	SI4836-A10-GSR				10,000	1 - 10 - 100 $2.40 1000 $2.40 10000 $2.40	Buy Now
FAIRCHILD SI4822DY SI4822DY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	SI4822DY		7,022		665	1 - 10 - 100 - 1000 $0.52 10000 $0.46	Buy Now
Skyworks Solutions Inc SI4825-A10-CSR RF Receiver AM/FM/SW 2.5V/3.3V 16-Pin SOIC T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	SI4825-A10-CSR		2,500		163	1 - 10 - 100 - 1000 $2.08 10000 $1.95	Buy Now
Rochester Electronics	SI4825-A10-CSR		2,500		1	1 - 10 - 100 $1.85 1000 $1.66 10000 $1.56	Buy Now
Richardson RFPD	SI4825-A10-CSR				10,000	1 - 10 - 100 $2.23 1000 $2.23 10000 $2.23	Buy Now

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SI48 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized	Original	si4804bdy 2002/95/ec si4804bdy-t1-e3 si4804bdy-t1-ge3 +22011/65/eu 12-mar-12	PDF
SI4850EY-t1g Abstract: si4850 Contextual Info: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	si4850ey 2002/95/ec si4850ey-t1-e3 si4850ey-t1-ge3 +42011/65/eu 12-mar-12 si4850ey-t1g si4850	PDF
si4838 Contextual Info: Si4838DY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 25 0.004 at VGS = 2.5 V 20 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated	Original	si4838dy si4838dy-t1-e3 si4838dy-t1-ge3 2011/65/eu +32002/95/ec 12-mar-12 si4838	PDF
Si4842DY Abstract: S-02445 Contextual Info: Si4842DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	si4842dy s-02445--rev 06-nov-00 s-02445	PDF
2sc9018 Contextual Info: AN738 Si4825/36-A A NTENNA , S CHEMATIC , L AYOUT AND D E S I G N G UIDEL INES 1. Introduction This document provides general Si4825/36-A design and AM/FM/SW antenna selection guidelines, including schematic, BOM and PCB layout. All users should follow the Si4825/36-A design guidelines presented in Section 2	Original	an738 si4825/36-a si4825 si4836 +12sc9018	PDF
Si4816BDY Abstract: Si4816BDY-T1-E3 Contextual Info: Si4816BDY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.0185 at VGS = 10 V 6.8 0.0225 at VGS = 4.5 V 6.0 0.0115 at VGS = 10 V 11.4 0.016 at VGS = 4.5 V	Original	si4816bdy 08-apr-05 si4816bdy-t1-e3	PDF
Si4866DY Abstract: Si4866DY-T1-E3 Contextual Info: Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 17 0.008 at VGS = 2.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs	Original	si4866dy si4866dy-t1-e3 si4866dy-t1-ge3 11-mar-11	PDF
Si4800BDY-T1-E3 Abstract: Si4800BDY Si4800BDY-T1-GE3 Contextual Info: Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.0185 at VGS = 10 V 9 0.030 at VGS = 4.5 V 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET	Original	si4800bdy si4800bdy-t1-e3 si4800bdy-t1-ge3 11-mar-11	PDF
Si4816DY Abstract: Si4816DY-T1-E3 Contextual Info: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 6.3 0.030 at VGS = 4.5 V 5.4 0.013 at VGS = 10 V 10 0.0185 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21	Original	si4816dy 2002/95/ec 11-mar-11 si4816dy-t1-e3	PDF
Si4888DY Abstract: Si4888DY-T1-E3 Si4888DY-T1-GE3 Contextual Info: Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.007 at VGS = 10 V 16 0.010 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET	Original	si4888dy si4888dy-t1-e3 si4888dy-t1-ge3 11-mar-11	PDF
Si4840DY Abstract: Si4840DY-T1-E3 Si4840DY-T1-GE3 US2050 Contextual Info: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 ID (A) 0.009 at VGS = 10 V 14 0.012 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	si4840dy 2002/95/ec si4840dy-t1-e3 si4840dy-t1-ge3 +211-mar-11 us2050	PDF
Contextual Info: SPICE Device Model Si4804DY Dual N-Channel 30-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse	Original	si4804dy	PDF
si4829 Contextual Info: Si4829DY Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.215 at VGS = - 4.5 V -2 0.320 at VGS = - 2.5 V -2 Qg (Typ.) 2.6 nC SCHOTTKY PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21	Original	si4829dy 2002/95/ec si4829dy-t1-e3 18-jul-08 +1si4829	PDF
SI4823DY Contextual Info: SPICE Device Model Si4823DY Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	si4823dy 18-jul-08	PDF

Contextual Info: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	si4840bdy 2002/95/ec si4840bdy-t1-e3 si4840bdy-t1-ge3 +32011/65/eu js709a 02-oct-12	PDF
Si4862DY Contextual Info: Si4862DY New Product Vishay Siliconix N-Channel 16-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D Low 3.3-mW rDS(on) D Low Gate Resistance PRODUCT SUMMARY VDS (V) 16 rDS(on) (W) ID (A) 0.0033 @ VGS = 4.5 V 25 0.0055 @ VGS = 2.5 V 20 APPLICATIONS	Original	si4862dy s-03596--rev 07-may-01	PDF
Si4804CDY Abstract: Si4804BDY-T1-E3 Si4804BDY Si4804CDY-T1-GE3 Contextual Info: Specification Comparison Vishay Siliconix Si4804CDY vs. Si4804BDY Description: Package: Pin Out: Dual N-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4804CDY-T1-GE3 replaces Si4804BDY-T1-E3 Si4804CDY-T1-GE3 replaces Si4804BDY-T1-E3	Original	si4804cdy si4804bdy si4804cdy-t1-ge3 si4804bdy-t1-e3 +120-jul-09	PDF
Si4818DY Contextual Info: Si4818DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.0155 @ VGS = 10 V 9.5 0.0205 @ VGS = 4.5 V 8.2 SCHOTTKY PRODUCT SUMMARY	Original	si4818dy s-00042--rev 24-jan-00	PDF
71142 a Abstract: 71142 D Si4886DY Contextual Info: Si4886DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.010 @ VGS = 10 V 13 0.0135 @ VGS = 4.5 V 11 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	si4886dy 08-apr-05 71142 a 71142 d	PDF
S99-041 Contextual Info: Si4884DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S	Original	si4884dy s99-041--rev 04-oct-99 s99-041	PDF
Contextual Info: Si4810DY Vishay Siliconix N-Channel 30-V D-S MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V "10 0.020 @ VGS = 4.5 V "8 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A	Original	si4810dy s-56946--rev 23-nov-98	PDF
Si4866BDY Abstract: 71342 Contextual Info: New Product Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0053 at VGS = 4.5 V 21.5 0.006 at VGS = 2.5 V 20.2 0.0074 at VGS = 1.8 V 18.2 VDS (V) 12 Qg (Typ) 29.5 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	si4866bdy si4866bdy-t1-e3 08-apr-05 71342	PDF
si4833a Abstract: SI4833ADY Contextual Info: Si4833ADY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A)a 0.072 at VGS = - 10 V - 4.6 0.110 at VGS = - 4.5 V - 3.4 Qg (Typ) • LITTLE FOOT Plus Power MOSFET RoHS - 4.6 COMPLIANT	Original	si4833ady si4833ady-t1-e3 s-60428-rev 20-mar-06 +1si4833a	PDF
Si4884DY Abstract: Si4884DY-T1 Contextual Info: Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V 12 0.0165 @ VGS = 4.5 V 10 D D D D SO-8 S S S G 8 D 2 7 D 3 6 D 4 5 D 1 G N-Channel MOSFET Top View Ordering Information: Si4884DY	Original	si4884dy si4884dy-t1 08-apr-05	PDF

SI48 Search Results

SI48 Datasheets (416)

SI48 Price and Stock

Skyworks Solutions Inc SI4844-A10-GUR

Skyworks Solutions Inc SI4820-A10-CU

Skyworks Solutions Inc SI4836-A10-GSR

FAIRCHILD SI4822DY

Skyworks Solutions Inc SI4825-A10-CSR

SI48 Datasheets Context Search

SI4850EY-t1g

si4838

Si4842DY

2sc9018

Si4816BDY

Si4866DY

Si4800BDY-T1-E3

Si4816DY

Si4888DY

Si4840DY

si4829

SI4823DY

Si4862DY

Si4804CDY

Si4818DY

71142 a

S99-041

Si4866BDY

si4833a

Si4884DY