Si4842DY
Abstract: S-02445
Contextual Info: Si4842DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si4842BDY
Abstract: Si4842DY Si4842DY-T1-E3 Si4842BDY-T1-E3 Si4842DY-T1
Contextual Info: Specification Comparison Vishay Siliconix Si4842BDY vs. Si4842DY Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4842BDY-T1-E3 Replaces Si4842DY-T1-E3 Si4842BDY-T1-E3 Replaces Si4842DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
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Si4842DY
Abstract: Si4842DY-T1 Si4842DY-T1-E3
Contextual Info: Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (Ω) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View Ordering Information: Si4842DY
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si4842dysi4842dy-t1si4842dy--e3si4842dy-t1-e3+118-jul-08
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Si4842DY
Contextual Info: Si4842DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si4842DY
Contextual Info: SPICE Device Model Si4842DY N-Channel 30-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse
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si4842dysub-circu10 |
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S-41576-Rev
Abstract: Si4842DY Si4842DY-T1 Si4842DY-T1-E3
Contextual Info: Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (Ω) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View Ordering Information: Si4842DY
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si4842dysi4842dy-t1si4842dy--e3si4842dy-t1-e3+208-apr-05s-41576-rev
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Si4842DY
Abstract: NC1036 71482
Contextual Info: \\\ SPICE Device Model Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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si4842dy0-to-10v19-feb-02nc1036+171482
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Si4842DY-T1-E3
Abstract: Si4842DY Si4842DY-T1
Contextual Info: Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (Ω) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View Ordering Information: Si4842DY
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si4842dysi4842dy-t1si4842dy--e3si4842dy-t1-e3+2s-41576--rev23-aug-04
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AN609
Abstract: Si4842DY
Contextual Info: Si4842DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4842DY
Abstract: Si4842DY-T1
Contextual Info: Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View Ordering Information: Si4842DY
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fr9220
Abstract: DPA426
Contextual Info: DPA423-426 DPA-Switch Family Highly Integrated DC-DC Converter ICs for Distributed Power Architectures Product Highlights VO Highly Integrated Solution • Eliminates 20-50 external components–saves space, cost • Integrates 200 V high frequency MOSFET, PWM control
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CT7343
Abstract: m7 sod123 6111T P8208 MT718 MMSZ470 MMSZ47 pe-68386 78m13 "Power over LAN"
Contextual Info: SC4810B/E High Performance Current Mode PWM Controller with Complementary Output, Programmable Delay POWER MANAGEMENT Description Features The SC4810B/E is a 16 pin BICMOS primary side PWM controller for use in Isolated DC-DC and off-line switching
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sc4810b/emlpq-16ct7343m7 sod123+86111tp8208mt718mmsz470mmsz47pe-6838678m13power over lan
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R0805
Abstract: mosfet 4456 sot23-123
Contextual Info: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description Features The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and
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CT7343
Abstract: pa016 SC1302
Contextual Info: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description PRELIMINARY Features The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and
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LX1671
Abstract: LX1673 Si4842DY fet cross reference 5a2 zener diode
Contextual Info: LX1673 PRODUCT DESIGN GUIDE AN20 LX1673 PR0DUCT DESIGN GUIDE I N T E G R A T E D Copyright 2000 Rev. 0.2, 2002-09-12 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX1673
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71917
Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller
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an607si9137ssop-28si9910+12si9912si991310-oct-0271917level logic mosfet transistor so-8offline switchmodesi9110siliconix an607an707si4406dypowerpak so-8si2301ds
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170M
Abstract: IRF7811A Si4364DY Si4416DY Si4420DY Si4842DY Si4880DY in-line switch
Contextual Info: Presented at PCIM Conference, May 14-16, 2002, Nuremburg, Germany Ultra-High Cell Density TrenchFET Devices: Obtaining the Critical Balance of Switching Performance Versus On-Resistance and Its Associated Impact on Device Selection Guy Moxey: Vishay Siliconix, Bracknell, UK
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5a6 zener diode
Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
Contextual Info: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical
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si4418dy130mohmsi4420bdysi6928dq+1235mohmsi6954adq53mohmsip2800sum47n10-24l24mohm5a6 zener diodedual mosfet dipdiode zener 6.2v 1w10v zener diode5a6 smd sot23dg9415
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mosfet 4456
Abstract: R0805 C31 MARKING CODE SO8 CT7343 4456 so8 SC4910A SC4201 1N4148WS SC4910AITSTRT SC4910B
Contextual Info: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description Features The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and
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AMD64
Abstract: LX1677 LX1677-CLQ LX1677-CLQT LX1677-CPW
Contextual Info: LX1677 I N T E G R A T E D AMD64 Processor VRM Controller P R O D U C T S P RELIMINARY D ATA S HEET KEY FEATURES DESCRIPTION maximizing regulator response. A true differential input amplifier is used for remote voltage sensing at the processor core. A VID code generator provides an
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C0603C102K8RAC
Abstract: IRF7811W IRF7822 JMK325BJ226MN LMK316BJ475ML LMK325BJ106MN MAX1954 kemet capacitor 1nF 0603 capacitor 1nF 0603 N4 SOT23
Contextual Info: Maxim > App Notes > POWER-SUPPLY CIRCUITS Nov 11, 2002 Keywords: graphics chip, high current, Nvidea, ATI, processor power APPLICATION NOTE 1781 Graphics Chip Supply Delivers 1.65V at 26A Abstract: Game boxes are using more powerful processors to provide more realistic and complex graphics and
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max1954300khz100ncmax1954eub+13com/an1781an1781app1781appnote1781c0603c102k8racirf7811wirf7822jmk325bj226mnlmk316bj475mllmk325bj106mnkemet capacitor 1nf 0603capacitor 1nf 0603n4 sot23
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CT7343
Abstract: R0805 sot23-123 10K ohms 0805 package 4910a 4431 mosfet r51 c/4 P8208T SC4910 SC4910A
Contextual Info: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description PRELIMINARY Features K K K K K K K K K K K K The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and
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sc4910a/b8208t31414rtps2829+13tps2829dbvrtssop-20sc4911ct7343r0805sot23-12310k ohms 0805 package4910a4431 mosfetr51 c/4p8208tsc4910sc4910a
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5a2 zener diode
Abstract: AN19 LX1671 LX1672 Si4842DY
Contextual Info: LX1672 PRODUCT DESIGN GUIDE AN19 LX1672 PR0DUCT DESIGN GUIDE Protected by US Patents: 6,285,571 & 6,292,378 I N T E G R A T E D Copyright 2000 Rev. 0.2a, 2006-03-08 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
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mosfet 4456
Abstract: p94a marking U6 SOD123 GRM55RR
Contextual Info: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description PRELIMINARY Features The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and
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