SI PNP EPITAXIAL PLANAR DARLINGTON Search Results

equivalent of TIP122

Contextual Info: TIP125 . TIP127 TIP125 . TIP127 Si-Epitaxial Planar Darlington Power Transistors Si-Epitaxial Planar Darlington-Leistungs-Transistoren PNP PNP Version 2006-10-17 4 Max. power dissipation with cooling Max. Verlustleistung mit Kühlung 3.8 3 ±0.2 Type Typ

equivalent of TIP122

Abstract: TIP120 equivalent TIP127 TIP127 equivalent tip127 data TIP120 TIP122 TIP125 TIP126
Contextual Info: TIP125 . TIP127 TIP125 . TIP127 Si-Epitaxial Planar Darlington Power Transistors Si-Epitaxial Planar Darlington-Leistungs-Transistoren PNP PNP Version 2006-10-17 Max. power dissipation with cooling Max. Verlustleistung mit Kühlung 4 3 3.8 Type Typ 13.2

Contextual Info: SANKEN E L E C T R I C CO LTD SSE D SLA4340 • 7 cn ü 7 4 1 0001254 =134 « S A K J Silicon NPN Triple Diffused Planar Darlington Silicon PNP Epitaxial Planar Darlington ■M axim um Ratings Item rra=2 5 o Symbol PNP SIÄÄf Collector-to-B ase Voltage VCBO

2SB750

Abstract: 2SD836 2SD836A 2SB750A uips
Contextual Info: 2SB750, 2SB750A 2SB750, 2SB750A v i; u > P N P x t =¥"> r J i s y i ' - j - B ? - V > k > Si PNP Epitaxial Planar Darlington U nit I mm 10.5 + 0.5 Bffl, X - i -y-31 > / P o w e r Amplifier, Switching 2SD836, 2SD836A ¿: n > 7° U > > ^ U / Complementary Pair

L2505

Contextual Info: h "7 > y7 > $ / T 2SB1344 ransistors 2SB 1344 PNP y <J □ > h 7 > y X 2 11?$* V Epitaxial Planar PNP Silicon Transistor Darlington 1£i§>Jfc£2j*Sli!ffl/L o w Freq. Power Amp. • 1) h -> fS < S c T 'h F E ? - ' ) > 2) • - 3) ' K - * • I 5 ¡4 0 /D im e n s io n s (U n it: mm)

2SB1181F5

Contextual Info: h z 7 > y X - $ t / T ransistors 2 S B 1 1 8 2 S B 1 1 8 2 S B 1 181 /2 S B 1 1 8 1 F5 Freq. Power Amp. 1 F 5 Epitaxial Planar PNP Silicon Darlington Transistors • V c e o = —8 0 V , h7 > y Z $ PNP 1 Dimensions Unit : mm lc = — 1A 2) h FEC0 iJ - 7 iJ t -(

Contextual Info: BS E D SANKE N E L E C T R I C CO LT» 6010 7^0741 OOOllflfl 073 « S A K J Silicon NPN Triple Diffused Planar Darlington Silicon PNP Epitaxial Planar Darlington •Maximum Ratings Item Ta=25-0 Symbol NPN PNP Unit C ollector-to-B ase Voltage VCBO 60 -6 0

2SB1272

Contextual Info: K =j > y 7. $ /Transistors 2SB1272 2SB1272 PNP > V □ > b 7 > 'J 7 s $ X Epitaxial Planar PNP Silicon Transistor Darlington 1£Jil>j£S^iS,liffl/Low Freq. Power Amp. • ÿH fi’+ iiE I/'D im e n s io n s (Unit : mm) • ft* V -U 1) >V h FE r 2) $ > ! * - $ • < * - KP*3*to

2SB1359

Abstract: 2sd2039
Contextual Info: h "7 > y X $ / J ransistors 2SB1359 2SB1359 PNP v U =l> h 7 > y * $ I ?-v> h>mm Epitaxial Planar PNP Silicon Transistor (Darlington) ffiJ§>j£1i:fri£lll! ffl/L o w Freq. Power Amp. ^•ffi^ ä O /D im e n s io n s (U n it: mm) ? - ‘j > D hFE * '' ^ o

sc3144

Abstract: 2SA1258 2SC3144 TI309
Contextual Info: Ordering number: EN 1058D 2SA1258/2SC3144 PNP/NPN Epitaxial Planar Silicon Darlington Transistor 60V/3A for High-Speed Drivers Applications Features • High Pp. • High switching speed. • WideASO. : 2SA1258 Absolute M aximum R atings at Ta = 25°C

2SA936

Contextual Info: S ÿ > y X $ /Transistors 9 Q “ A Q 1 R w 2SA936 1 1- * * ty T l/y°ly~ ^ pnp v •;=i u > s > h? > ¡HiiHl & Z ' f High Gain Amp. & Switching Epitaxial Planar PNP Silicon Darlington Transistor • ÿ f ff i^ jiS I /D im e n s io n s U nit : mm) • tt*

2sa525

Abstract: CA3036 2n1613 replacement CK727 D16P4 NS6205
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2SB1474F5

Abstract: 2SB147
Contextual Info: h7 > V O C D $ /Transistors 4 4 7 4 C 2SB1474F5 C i t : ^ ^ '> 7 ^ U - t ^ P N P y |J = i > h 7 > y ^ ^ Epitaxial Planar PNP Silicon Transistor Darlington ffilM l^Jiltnffl/Low Freq. Power Amp. Wfö^äslSI/Dimensions (Unit : mm) • fc * 1) # - v > b hFE ^ ¡ a i- 'o

2SB1551

Contextual Info: h 7 > y Z. £ /Transistors 2SB1551 2SB1551 i e * * y 7 \>11/ •-tM PNP y 'J □ > h7 > y 7, $ ? - >J> h>i Epitaxial Planar PNP Silicon Transistor (Darlington) Freq. Power Amp. Tt'âEI/'Dim ensions (Unit : mm) • « ft 1) 3* - U > h h FE 4.5 ± 0.2 2) K rtK c

2SB1550

Contextual Info: h ÿ > 'S /'Transistors 2SB1550 2SB1550 Epitaxial Planar PNP Silicon Transistor Darlington Freq. Power Amp. • M i r fiiE l/ D im e n s io n s (Unit : mm) 9 — U > S >i£t&bT hFE A 'iS '- 'o 1) 2) * - 4.5± 0.2 KF*3»o ¿3,6±0.2 3 ) ^ - i 5 7 o i • Features

d2494

Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
Contextual Info: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in

NS1000 n

Abstract: CA3036 BVCEO-90V 2CY38 transistor A431 2n1613 replacement A431 UD1001 NS1862 QD401-78
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2SB852K

Abstract: T146 T147 a194
Contextual Info: h ~7 > 2SB852K /Transistors 2SB 852K x t r $ * '> 7 ^ y U “ t ! P N P y y 3 > K 7 > y X $ Epitaxial Planar PNP Silicon Transistor Darlington Gain Amp. * ^ M ^ S iH / 'D im e n s io n s (U nit: mm) 1) h > S « T S h Fe T * S o 2 ) B E r S K C t i 4 k Q 0 g % £ r t f t Q i& j£ $

Contextual Info: 2SB1286 h "7 > y ^ ^ / T ransistors O C D 4 O Q C f c O D l a i h?$* y - r J i ' ' 7 i ' - J m B P N P y ,J 3 > b 7 > y Z $ O O Epitaxial Planar PNP Silicon Transistor Darlington f f i S Ä S ä i l f i f f l / L o w Freq. Power Amp. • • ii-ffM ü ia /D im e n s io n s (Unit : mm)

transistor OE 4k

Contextual Info: 2SB1183F5 h ~7 > v Z . $ / T ransistors O C D 4 f c w D l O O A 1 O O C R r O • Wft 1 * - > ;> h > « « ) Epitaxial Planar PNP Silicon Transistor (Darlington) Freq. Power Amp. • wf?\rì£|3|/'Diinensions (Unit : mm) IJ ^ h > iii^ cT iS h F E T i> 5 o

marking ML5

Abstract: 2SB977 2SB977A 2SC1547 2SD893 PG-25 ML5 marking 2SB970 2SD893A IS020
Contextual Info: PANASONIC INDL/ELEK-CSEfll} 7EC V | ^ 3 5 0 5 4 □GD1GD4 7 | ~ h ^ ^ T / 5 ? _ *_ 2SB970 2SB970 '> ij zj > PNP öl tf £ '> t Ji/Z?I s - j - f î t / S i PNP Epitaxial Planar fSISEEiÜ^jittififfl/AF Output Amplifier

2SB902

Abstract: 2SB938 2SB937 2SB937A 2SB938A 2SD1260 2SD1260A 2SD1261 2SD1261A Scans-00138099
Contextual Info: PANASONIC INDL/ELEKiSEMI} 75C I> | b*i35flSM h^>S>7/9 6 | * 2SB902 2SB902 '> ij □ y P N P i l f ^ y y \s~7\s— - y i & / Si P N P Epitaxial Planar —iSiiiH iffl/G eneral Amplifier • 1# M /F e a tu r e s • x. I • 3 L- ? ? ■J)L i •■/ i't&fD'ffiffi VCK sat) A 'tlt'.'o/Low V ,h(SBl)

TIL78

Abstract: 2SA124 SMT102 2sa123 2sa155 AF101 2N534 MA520 maa 550 TF65
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2SA1555

Abstract: 2SA790 hFE-20
Contextual Info: 40E ROHM CO LTD T> 7020^*1 m 000537b /'Transistors 2SA790/2SA1555 • ” 2 | i e ■ " ^ ^ '> T ^ 7 V - ^ P N P '> S A 1 5 5 5 U = i > — ""” ^ - ,; > - 7 ^ 3 7 - 2 ^ b > Gain Amp. & Switching "J 2 2 EÎRHM Epitaxial Planar PNP Silicon Darlington Transistors