2SB147 Search Results

2SB1470

Abstract: 2SD2222
Contextual Info: Power Transistors 2SD2222 Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB1470 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO 160 V Collector to emitter voltage VCEO 160 V

New Jersey Semiconductor

Contextual Info: 'j£ti£iJ ^zmi-Conductoi Lpioduati, One. U C/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SB1477 • -^ DESCRIPTION ^ • Collector-Emitter Breakdown Voltage: V(BR)CEo=-100V(Min.)

La 7676

Abstract: La 7676 data sheet marking b42 TC-2353 transistor B42 2SB1475 B44 transistor marking B44 marking B43 TRANSISTOR
Contextual Info: DATA SHEET SILICON TRANSISTOR ELECTRON DEVICE 2SB1475 PIMP SILICON EPITAXIALTRANSISTOR AUDIO FREQUENCY AMPLIFIER DESCRIPTION 2SB1475 is designed fo r audio frequency amplifier and switching application, especially in VCR cameras and headphone stereos. FEATURES

2SB1470

Abstract: 2SD2222 IC7A TO-3PL
Contextual Info: Inchange Semiconductor Product Specification 2SB1470 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD2222 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification

Contextual Info: Transistor 2SB1473 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to2SD2225 Unit: mm 1.05 2.5±0.1 ±0.05 0.8 ● ● High collector to emitter voltage VCEO. Satisfactory linearity of forward current transfer ratio hFE.

B948A

Abstract: 2SA1284 2SA1757 2SA1636 2SA1444 2SA1462 2sa1307 2SA1637 2SB793 nec 1441
Contextual Info: m s T y p e No. a s Manuf. H i# SANYO 1423 / Z. * 2SA 1424 / M 2SA1669 2 SA 1425 ^ 2SA B H T O SHIBA NEC RN2002 AN 1 A 4 M B ÎL HITACHI U ± il FU J ITSU & T MATSUSHITA h m MITSUBISHI □ — A ROHM DTA114ES UN41Í1 2SA1245 * 2 2SA1768 2SB1473 2SA1284 2SB1 1 3 0 M

Contextual Info: 2SB1474F5 b y > S s 7 s $ / Transistors * - • ; > h > * * Epitaxial Planar PNP Silicon Transistor (Darlington) itt^jitt'ISffl/Low Freq. Power Amp. 1 Tt'iiHl/Dimensions (Unit: mm) 1) 5 f - U > h > & & T ' hFE 2) 3) a. - x • I 5 - j ^ IS U lfiS trtJ S o

2SB1470

Abstract: 2SD2222
Contextual Info: Power Transistors 2SB1470 Silicon PNP triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SD2222 5.0±0.3 3.0 (10.0) (6.0) (2.0) (4.0) 20.0±0.5 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

2SB1473

Abstract: 2SD2225
Contextual Info: Transistor 2SD2225 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1473 Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.65 max. 14.5±0.5 ● High collector to emitter voltage VCEO of 120V. Optimum for low-frequency driver amplification.

2SB1471

Abstract: 2SD2223
Contextual Info: Ordering num ber: EN 3365 r 2SB1471/2SD2223 No.3365 PN P/N PN E pitaxial P la n ar Silicon T ransistors Driver Applications A p p lic a tio n s • Motor drivers, prin ter ham m er drivers, relay drivers,voltage regulator control F e a tu re s •Suitable for sets whose height is restricted

2SB1474

Abstract: doide
Contextual Info: 2SB1474 Transistor Power Transistor -80V, -4A 2SB1474 •Features 1) Darlington connection for a high hre. 2) Built-in resistor between base and emitter. 3) Built-in damper doide. •External dimensions (Units: mm) •Absolute maximum ratings (Ta=25°C)

Contextual Info: 2SB1474 Transistor Power Transistor −80V, −4A 2SB1474 Symbol Limits Unit Collector-base voltage Collector-emitter voltage VCBO VCEO -80 -80 V V Emitter-base voltage VEBO -7 -4 -6 V A(DC) W Collector current IC Collector power dissipation PC Junction temperature

2SB1472

Abstract: 2SD2224
Contextual Info: Ordering number:EN3366 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1472/2SD2224 Driver Applications Applications Package Dimensions • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit:mm 2049B [2SB1472/2SD2224] Features

2SB1470

Abstract: 2SD2222
Contextual Info: Power Transistors 2SB1470 Silicon PNP triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SD2222 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO −160 V Collector to emitter voltage VCEO −160

transistor B42

Abstract: smd transistor b44 b42 smd transistor B42 350 MARKING SMD PNP TRANSISTOR 2a B44 transistor marking b42 marking B44 b42 transistor B43 marking
Contextual Info: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SB1475 Features Super miniature package. High DC current IC DC =500mA max. Low VCE(sat): VCE(sat)=-60mV at -100mA 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

3B14

Abstract: 2SB1472 2SD2224 SD22 33663 rr23
Contextual Info: 3366 Ordering n u m b e r:EN 2SB1472/2SD2224 No.3366 PNP/NPN Epitaxial Planar Silicon Transistors D river A pplications A p p licatio n s • Motor drivers, printer ham mer drivers, relay drivers,voltage regulator control F e a tu re s •Suitable for sets whose height is restricted

d400

Abstract: 2SB1342 transistors D400 2SB1474 2SD1933
Contextual Info: Transistors 2SB1474 / 2SB1342 2SD1933 94S-181-B400 (94L-906-D400) 298

Contextual Info: 2SB1477 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

Contextual Info: 2SB1474 / 2SB1342 2SD1933 Transistors Power Transistor —80V, —3A 2SB1474 / 2SB1342 I •A b s o lu te maximum ratings (T a = 2 5 t:) •F e a tu re s 1) 2) 3) 4) Darlington connection for a high hre. Built-in resistor between base and em itter. Built-in dam per doide.

2SD2222

Abstract: 2SB1470
Contextual Info: Product Specification www.jmnic.com 2SD2222 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SB1470 ・High forward current transfer ratio hFE ・Low saturation voltage VCE sat ・DARLINGTON APPLICATIONS ・For power amplification

marking b42

Contextual Info: Product specification 2SB1475 Features Super miniature package. High DC current IC DC =500mA max. Low VCE(sat): VCE(sat)=-60mV at -100mA 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO

2SB1470

Abstract: 2SD2222
Contextual Info: SavantIC Semiconductor Product Specification 2SD2222 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SB1470 ·High DC current gain ·Low saturation voltage VCE sat ·DARLINGTON APPLICATIONS ·For power amplification PINNING

2SB1478

Abstract: 2SD2237
Contextual Info: SavantIC Semiconductor Product Specification 2SB1478 Silicon PNP Power Transistors DESCRIPTION •With TO-247 package ·Complement to type 2SD2237 ·High DC current gain ·DARLINGTON APPLICATIONS ·For use in power linear and switching applications PINNING

2SB1474

Contextual Info: 2SB1474 Transistor Power Transistor −80V, −4A 2SB1474 Unit −80 −80 V V Emitter-base voltage VEBO −7 −4 −6 V A(DC) 1 W W (Tc=25˚C) Collector current IC Collector power dissipation PC A Junction temperature Tj 10 150 Storage temperature Tstg