SELECTRONIC Search Results

Contextual Info: -S? SELECTRONICS AMSUNG K M 6 4 B 1001 262,144 WORD X 4 Bit APRIL 1992 GENERAL DESCRIPTION FEATURES The KM64B1001 is a 1,048,576-bit high­ speed static random access memory organized as 262,144 words by 4 bit. The device is fabricated using Samsung's advanced BiCMOS process and designed for

Contextual Info: KM44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 4 C 1 0 0 0 A S L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications

A82c50

Contextual Info: ASYNCHRONOUS COMMUNICATION ELEMENT KS82C50A DESCRIPTION FEATURES Single C hip UART/BRG DC to 10 MHz Operation DC to 625K Baud Crystal o r External Clock Input On C hip Baud Rate Generator 1 to 65535 Divisor Generates 16x Clock Prioritized Interrupt Mode

PICSTART-16B

Abstract: PSIM 6.0 user manual milford serial lcd 16C64 ZIF socket 18pin CONNECTOR 16C71 16C84 PIC16C64 PIC16C71 PIC16C84
Contextual Info: Introduction Thank you for purchasing Parallax PIC development tools. We’ve done our best to ensure that our tools are easy-to-use and complete. As of November, 1994, we offer eight products for PIC development: • PIC16Cxx Assembler • PIC16Cxx Software Simulator

Contextual Info: KM41C16100 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 1 6 1 0 0 is a high speed C M OS 1 6 ,7 7 7 ,2 1 6 X 1 Dynam ic Random A ccess M em ory. Its design is optim ized fo r high perform ance applications

Contextual Info: SERIAL COMMUNICATION CONTROLLER KS85C30 Preliminary PRODUCTFEATURES PRODUCT OVERVIEW • 6,8, and 10 MHz operation • Low power CMOS • Pin compatible to NMOS versions • High speed-2.5M bit/sec channels • Two independent, full-duplex channels, each with

Contextual Info: SAMSUNG ELECTRONICS INC MMBTM10 _ 42E D B 7 ^ 4 1 4 2 0GÜT0S3 G H S f l G K NPN EPITAXIAL SILICO N TRANSISTO R VHF/UHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Vcao 30 25 3 350 150 357 V V V mW °C °C/W Collector-Base Voltage

Contextual Info: PRELIMINARY KM93CS56/KM93CS66 CMOS EEPROM 2K /4 K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Single 5 volt supply • Write protection with memory pointer • Low power consumption — Active: 3 mA TTL — Standby: 100 pA (TTL)

Contextual Info: 42E » JH SAMSUNG ELECTRONICS INC KM75C103A 7U_4'1.M2 _00].Ji5bS 3 M S M G K CMOS PROGRAMMABLE FLAG FIFO :%-zs P r o g r a m m a b le - F la g s , 2 K X 9 F IF O FEATURES DESCRIPTION • Flrst-ln-Flrst-Out Dual Port Memory —2 K x 9 Organization • Very High Speed independent of depth/width

KM6264BL-10

Abstract: samsung CMOS SRAM KMM591000 KM75C01 KM75C01AP80 KM75C03AJ-50 KM6264BL7 KM75C01AP-20 KM75C01AP-25 KM75C01AP-80
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAIM »¡SAMSUNG Electronics 11 MEMORY ICs »SElectronics SAMSUNG FUNCTION GUIDE MEMORY ICS sgSAMSUNG Electronics FUNCTION GUIDE 13 MEMORY ICs FUNCTION GUIDE *: N ew Product f: P relim inary P roduct f t : U nder D evelopm ent

SMO-14

Abstract: SLG 2016 D 2SK26 2N42 N4 TAM 2N425 marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426
Contextual Info: MIL-S-19500A1B EL See Section6 MILITARYSPECIFICATION SEMICONDUCTORDEVICE,TRANSISTOR,PNP, GERMANIUM,SWITCHING TYPSS 2N425,2Nb26, 2N42? 1. SCOPS 131 w.-. This specificationcovers the detail requirementsfor germanium PNP,“transietora for use in low-power switchingapplication

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

Contextual Info: M AY 2007 - T H IS D R A W IN G B E C A M E T H E P R O P E R T Y OF W IN C H E S T E R E L E C T R O N IC S C O R P O R A T IO N , W ALLIN G FO RD , CT 06492 . IT E M REQ *D 1 * 1 2 D E S C R IP T IO N ^ PART 7 9 5 -1 3 -9 SHEET 2 OF 2 REVI8I0N8 NO.-

LG crt monitor 15 inch circuit diagram

Abstract: KDA0476CN-66 KDAQ476 KDA0476PL-66 lg crt monitor circuit diagram lg crt monitor rgb cable samsung crt monitor circuit diagram samsung crt monitor rgb cable KDA0476 RS-170
Contextual Info: CM O S R A M D A C s Preliminary KDA0471/0476/0478 FEATURES Triple 6 or 8-bit High Performance D-to-A Converters 50, 66, 80,100 and 120 MHz Operation Personal System/2 Compatible "Snow-Free" Operation 256 Word Color Palette SRAM 15 x 18 Overlay Palette SRAM KDA0471

KM428C128

Abstract: 428C128 256X8 CMOS RAM 428-C KM428C128-6
Contextual Info: r PRELIMINARY v KM428C128 CMOS VIDEO RAM 1 28K X 8 Bit CMOS Video RAM FEATURES • Dual port Architecture 128K x 8 bits RAM port 256 x 8 bits SAM port • Performance - Speed Parameter RAM access tim e tRAc RAM access tim e (tcAc) RAM cycle tim e (tRc)

Contextual Info: DRAM MODULES KMM5321000AV/AVG 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM532100QAV is a 1M bitsx32 Dynamic RAM high density memory module. The Samsung KMM5321000AV consist of eight CMOS 1M x4 bit DRAMs in 20-pin SOJ package mounted on a 72-pin

Contextual Info: KM75C102A CMOS PROGRAMMABLE FLAG FIFO Programmable-Flags, 1 KX9 FIFO FEATURES DESCRIPTION • First-In-First-Out Dual Port Memory — 1K x 9 Organization • Very High Speed independent of depth/width —30ns Cycle Time • Two Fully configurable Almost Full and Almost

MC7810C

Contextual Info: MC78XXC/AC/I LINEAR INTEGRATED CIRCUIT 3-TERMINAL 1A POSITIVE VOLTAGE REGULATORS The MC78XX/MC78XXA series o f three-term inal positive re gulato rs are available in the T0-220 package and w ith several fixe d o u tp u t voltages, m aking it useful in a w ide range o f a p p lica tio n s. These re gulato rs can

Contextual Info: KF347/A LINEAR INTEGRATED CIRCUIT QUAD JFET INPUT OPERATIONAL AMPLIFIERS The KF347 is a high speed quad JFET input operation­ al amplifiers. This feature high impedance, wide band­ width, high slew rate, and low input offset and bias currents. The KF347 may be used in circuits requiring

AEG PS 431 relay manual

Abstract: AEG PS 431 relay protocol caterpillar cat data link ford eec V relay AEG PS 431 LM304 HD9063 Murphy Controller TTD
Contextual Info: an Enovation Controls Brand an Enovation Controls Brand ECONTROLS, INC 5311 South 122nd East Avenue Tulsa, Oklahoma 74146 USA Phone: +1 918 317 4100 Fax: +1 918 317 4266 E-mail: sales@fwmurphy.com Website: www.fwmurphy.com 5757 Farinon Drive San Antonio, Texas 78249 USA

KM44C4100-6

Abstract: xnxx KM44C4100-7 km44c4100 taa 723 KM44C4100-8 dram 4mx4
Contextual Info: KM44C4100 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page M ode FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e ra nge: The Samsung K M 4 4 C 4 1 0 0 is a high speed CMOS 4 , 1 9 4 ,3 0 4 X 4 Dynam ic Random A ccess M em ory. Its design is optim ized for high perform ance applications

41C256

Abstract: KM41C256P KM41C256-8 KM41C256 KM41C256-7 KM41C256Z KM41C256J KM41C256-10 41C256-
Contextual Info: CMOS DRAM KM41C256 256Kx 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C256 is a CMOS high speed 262,144 bit x 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

KMM5916000

Contextual Info: KMM5916000/T DRAM MODULES 16 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5916000/T is a 16M bit x 9 Dynamic RAM high density memory module. The Samsung KMM5916000/T consist of nine KM41C16000rr DRAMs

KM44C256AP

Abstract: KM44C256AJ samsung hv capacitor KM44C256A-8 KM44C256A-10 KM44C256A KM44C256A-12
Contextual Info: SAMSUNG SEMICONDUCTOR INC E3E D 7=^4145 OOQfilbO 7 KM44C256A CMOS DRAM 2 5 6 K x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tfUC KM44C256A- 8 80ns tcAc 20ns tRC 150ns KM44C256A-10 100ns 25ns 180ns KM44C256A-12