SE 115N Search Results

A2918SW

Abstract: SLA7020M SMA7029M diode ry 10 A SE005N 2-Phase Stepper Motor Driver sla7021m
Contextual Info: Error Amplifier ICs SE series Absolute Maximurrr Ratings TjfpeM o ^óflw ^or-Q round VoSage Collector Current V kso(V) lo(mA) SE 005N Electrical Characteristics Ta«-25'C * Operating Temperature T o p (C : 1 Remarks Output Defection VòRage V-(V> 12 5 .0 ± 0.1

SE 130N

Abstract: datasheet se 110n SE005N se 115n se 135n 1-30N 070N datasheet SE 125N SE 135 015N
Contextual Info: •Error Amplifier ICs SE series Absolute Maximum Ratings (Ta=25°C) Part No. Collector-Ground Voltage Collector Current VCGO (V) Ic (mA) SE005N Operating Temperature TOP (°C) 12 Electrical Characteristics (Ta=25°C) Output Detection Voltage VS (V) Remarks

DIODES marking 2a1

Abstract: 1N3064 500KHZ WaCS
Contextual Info: SG55236/SG55236A 5IL1D3N LINEAR INTEG RATED C IR C U ITS DUAL SEN SE AMPLIFIER/DATA REGISTERS D E S C R IP T IO N FEATURES The SG55236/SG55236A is a monolithic, dual channel, high speed sense amplifier with independently controlled data registers. The input section

"Digital Delay Line"

Abstract: 100NS 25NS 40NS 55NS 0451008
Contextual Info: BEL FUSE INC ^ ¿ Ë | 1351453 0000442 T | T-V7-/7 /defining a degree of excellence DIGITAL DELAY LINE SE R IE S 0451 ECL 10K PROGRAMMABLE LOGIC DELAY MODULE 4 BIT TECHNICAL INFORMATION TEST CONDITIONS Logic 1 — 0.9 Volts Logic O -1 .8 Volts Rise Time 20% to 8 0 % 2.0 Nsec

TC51832A

Abstract: 256X128X8 TC51832AP 1832A
Contextual Info: TOSHIBA TC51832AP/ASP/AF-70/85/10 TC51832APL/ASPL/AFL-70/85/10 SILICON GATE CMOS 32,768 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1832 A P is a 2 5 6 K bit high speed C M O S p se udo static RAM organized as 3 2 ,7 6 8 w o rd s by 8 bits. The TC 51832A P utilizes

TC518512

Abstract: transistor dk qq
Contextual Info: TOSHIBA TC518512PiyFiyFn/niL-70 DR /80(DK)/10(DK) SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description T h e T C 5 1 8 5 1 2 P L is a 4 M bit high speed C M O S p se udo static RAM organized as 52 4,28 8 w o rd s by 8 bits. The TC 5 1851 2P L utilizes

2.2K resistor

Abstract: cha 9935 grayhill relay 70 metal detector using 555 timer panasonic 614 battery panasonic EEU capacitor series date codes RLink schematic 74C04 GR-1089-CORE LE79R79
Contextual Info: Le71HE0040J Le79R79/R100/R101 Evaluation Board User’s Guide Revision F, Version 2 October 2, 2007 Document Number: 080255 For more information about all Zarlink products visit our Web Site at www.zarlink.com Information re lating to p roducts a nd services f urnished herein by Z arlink Se miconductor I nc. or i ts su bsidiaries c ollectively “Zarlink” is b elieved t o be rel iable.

2SK1796

Abstract: 2SK1804 2SK1713 2SK1784 2SK1794 2SK1772 2SK1773 2SK1774 2SK1775 2SK1785
Contextual Info: - 122 - f m £ tt ffl £ æ m i \ V * * K V js * m * Se 3 Vg s * X I* X P d /P c h (V) * * (A) a * (W) I gss (max) (A) Vg s (V) Ä (min) (max) Vd s (A) (V) (A) ft ft ä t ff) (max) V d s (V) (V) (V) (Ta=25tî) 1 Í S m (min) (S) Id (A) Vd s % ? (V) Id

TC518512

Abstract: LT/SG3527A
Contextual Info: TOSHIBA T C 5 1 8 5 1 2 P iy F L /F T L A R L - 7 0 L 'I /8 0 ( L T ) /1 0 q _ ,'I) SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description T h e T C 5 1 8 5 1 2 P L is a 4 M bit high speed C M O S p se udo static RAM organized as 5 2 4,28 8 w o rd s by 8 bits. The T C 5 1 85 12P L utilizes

Contextual Info: TOSHIBA T C 5 l8 5 1 2 F L / n , / F T I , / T R L 7 0 L V / 8 0 L V / l0 L V SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1 8 5 1 2 P L is a 4M bit high speed C M O S p se udo sta tic RAM organized as 5 2 4 ,2 8 8 w o rd s b y 8 bits. T h e T C 5 1 8 5 1 2P L

ha 1457 w

Abstract: MAGNETICA neodymium magnet HA 1166
Contextual Info: LOW FREQUENCY.FH8 Fri Apr 19 14:48:33 2002 Pagina 2 115Nd/W -Pro- LOW FREQUENCY This 15" long excursion, lightweight bass loudspeaker has been specifically designed to deliver high impact bass response, with exceptional high power handling capacity 400w RMS . The magnet structure incorporates a powerful neodymium magnet, reducing the total mass of the unit to

18G400

Abstract: subwoofer 600w 10G200 resistencia hilo bobinado 12K200 12LX60 15G400 15K200 15LX60 18G50
Contextual Info: LOW FREQUENCY.FH8 Fri Apr 19 14:48:33 2002 Pagina 1 21L50 -Pro- LOW FREQUENCY This 21" bass loudspeaker has been specifically designed to deliver high impact bass response, with exceptional high power handling capacity. It incorporates an edgewound copper ribbon voice coil 4"_ diameter and powerful, vented magnet structure. The result is an incredibly highly

LFX125B-03F256C

Abstract: LFX1200EB-04F900I pin out lfx1200eb-04f900i LFX1200EB LFX125B-03FN256C LFX125EB-05F256C LFX125B-04F256C LFX125B-05FN256C LFX125B-03F516C LFX500EB
Contextual Info: ispXPGA Device Datasheet June 2010 Select Devices Discontinued! Product Change Notifications PCNs have been issued to discontinue select devices in this data sheet. The original datasheet pages have not been modified and do not reflect those changes. Please refer to the table below for reference PCN and current product status.

lx64ev-3f100c

Abstract: LX64V-3F100C 3F100 5f208c LX64V-3FN100 LX64EB-5F100C LX128EV-5FN208I LX128EV-5FN208C LX64B-3FN100C LX64B-5F100C
Contextual Info: ispGDX2 Device Datasheet June 2010 Select Devices Discontinued! Product Change Notifications PCNs #09-10 has been issued to discontinue select devices in this data sheet. The original datasheet pages have not been modified and do not reflect those changes.

TC518128CFL

Contextual Info: INTEGRATED TOSHIBA TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC518128CFL/CFWL/CFTL-70V, -80V DATA SILICON GATE CM O S TENTATIVE 131,072 W O R D S X 8 BIT CM O S PSEUDO STATIC RAM DESCRIPTION The TC518128C-V Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072

feme a 001 24

Abstract: IC338 feme EFCH EN470 DIP32 LC338128M LC33864M LC33864P lc3381
Contextual Info: Ordering number : EN fcc4701 CMOS LSI LC33864P, M, PL, ML-70/80/10 i SA\YO 512 K 65536 words x 8 bits Pseudo-SRAM "S, Preliminary Overview Package D im ^ é lo n f”^ T he L C 33864 series is com posed o f pseudo static R A M unit: m m that operate on a single 5 V pow er supply and is organized

Contextual Info: Ordering number : EN fcc4701 CMOS LSI LC33864P, M, PL, ML-70/80/10 i SA\YO 512 K 65536 words x 8 bits Pseudo-SRAM "S, Preliminary Overview Package D im ^ é lo n f”^ T he L C 33864 series is com posed o f pseudo static R A M unit: m m that operate on a single 5 V pow er supply and is organized

toshiba C366

Abstract: toshiba C380
Contextual Info: TOSHIBA TC524262 TC524265 t a r g e t s il ic o n g a t e c m o s 262,144 WORDS x 16 BITS MULTIPORT DRAM DESCRIPTION The TC524262/265 is a 4M bit CMOS multiport memory equipped with a 262,144-words by 16-bits dynamic random access memory RAM port and a 512-words by 16-bits static serial access memory (SAM)

Contextual Info: TOSHIBA TC524262 TC524265 t a r g e t s il ic o n g a t e c m o s 262,144 WORDS x 16 BITS MULTIPORT DRAM DESCRIPTION The TC524262/265 is a 4M bit CM OS m ultiport m emory equipped with a 262,144-words by 16-bits dynam ic random access m emory RAM port and a 512-words by 16-bits static serial access m emory (SAM)

m925

Abstract: TC514256BJ tc51256t
Contextual Info: 262,144 WORDS x9 BIT DYNAMIC RAM PRELIMINARY MODULE DESCRIPTION The THM 92500BS is a 262,144 words by 9 bits dynamic RAM module which assembled 2 pcs of T C 514256BJ and lpcs of TC51256T on the printed circuit board. The THM 92500BS is optimized for application to the systems which are required high density and large capacity such a s main memory of

Contextual Info: TOSHIBA =10=17240 O D S M T M b 264 • T 0 S 2 TOSHIBA L 0 6 I C / M E M 0 R Y tR E SILICON GATE CMOS 262,144 WORDS x 16 BITS MULTIPORT DRAM TC524262 TC524265 D t a r g e t DESCRIPTION The TC524262/265 is a 4M bit CMOS multiport memory equipped with a 262,144-words by 16-bits

Contextual Info: • DDBMñññ ÖSE ■ T O S E " . TOSHIBA LOGIC/riEMORY » TC524162 TC524165 b'iE SILICON GATE CMOS 262,144 WORDS x 16 BITS MULTIPORT DRAM t a r g e t DESCRIPTION The TC524162/165 is a 4M bit CMOS multiport memory equipped with a 262,144-words by 16-bits

Contextual Info: TOSHIBA TC524162 TC524165 t a r g e t s il ic o n g a t e c m o s 262,144 WORDS x 16 BITS MULTIPORT DRAM DESCRIPTION The TC524162/I65 is a 4M bit CM OS multiport m em ory equipped with a 262,144-words by 16-bits dynam ic random access memory RAM port and a 512-words by 16-bits static serial access m em ory (SAM)

Contextual Info: TOSHIBA TC524162 TC524165 t a r g e t s il ic o n g a t e c m o s 262,144 WORDS x 16 BITS MULTIPORT DRAM DESCRIPTION The TC524162/165 is a 4M bit CM OS m ultiport m em ory equipped with a 262,144-words by 16-bits dynam ic random access m emory RAM port and a 512-words by 16-bits static serial access m emory (SAM)