SDT5556 Search Results

TO114

Abstract: SDT55456 SDT55460 SDT55556 SDT55560 SDT55956 SDT55960 ic 6250 DSASW0036862
Contextual Info: Device Type VCEO hFE V Min/Max @ IC (A) SDT55456 SDT55460 SDT55556 SDT55560 SDT55956 SDT55960 250 300 250 300 250 300 10/50 10/50 10/50 10/50 10/50 10/50 40.0 40.0 40.0 40.0 40.0 40.0 VCE (sat) @ IC (A) Max (V) 0.80 0.80 0.80 0.80 0.80 0.80 35.0 35.0 35.0

SDT423

Contextual Info: _ 8 3686 02 SO LITRON D EV IC ES INC_ 95D 02758 SOLITRON DEVICES INC T5 D — T"“- 3 3 - 0 / Ïm F | ù3bflbD2 00D57SA S | T i - t^WÊÊÊFBlË • P L A N A R P O W ER TR A N S IS TO R S % 5m O < M M DEVICE TYPE hpE MIN/MAX @ ic A

2N4863

Abstract: SDT5501 SDT5556 PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT 300V 0.5A NPN transistor
Contextual Info: -Æittron PKOOdJXgTr ÄTÄ1L©( MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER Devices, Inc. NPN EPITAXIAL PLANAR POWER TRANSISTOR* (FORMERLY 91 CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available)

2NS604

Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75

Solitron

Abstract: Solitron Transistor
Contextual Info: 8368602 SOLITRON .DEVICES INC SOLITRON DEVICES INC _ 95D 02823 D T ~ JJ-/JT "TS DE |fl3bflbOE 0002053 M [D yj tF ©ÄTTÄ[L®( VERY HIGH VOLTAGE, FAST SWITCHING CH IP NUM BER Devices. Inc. N PN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* CONTACT METALLIZATION

Contextual Info: 8368602 SOL ITRON D E V I C E S INC 95D 02869 D 7 S0LITR0N DEVICES INC tF>[Ri lS [ü)©ir ©^1TML Q)(g] M EDIUM TO HIGH VO LTA G E, FAST SW ITCHIN G CHIP NUMBER Devices, Inc N P N EPITAXIAL PLANAR POWER TRANSISTOR* * (FORMERLY 91) CONTACT METALLIZATION B ase and emitter: > 30,000 A Aluminum

2N6960

Abstract: TO114 SDT96302 SDT96303 2N4002 2N5678 2N421 2N6742 2N6884 SDT8756
Contextual Info: n? SOLITRON DEVICES 95D 0277 3 INC S0LITR0N DEVICES INC TS D T - 3 3 - O Z D f F | fl3bflbDS 0002773 1 |~ [ ^ m © ^ © M ^ y o © P L A N A R P O W E R T R A N S IS T O R S Devices, Inc. @ 1] MOW? Ic A) *T MIN (MHz) PT MAX (W) CASE TYPE CHIP TYPE 1.50

Contextual Info: C ra lp Ü J © ir VERY HIGH VOLTAGE, HIGH CURRENT o n tr a n Devices. Inc. CHIP NUM BER IMPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 50.000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)

Contextual Info: Devices. Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER IMPIM EPITAXIAL PLANAR POWER TRANSISTOR* FORMERLY 91 CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)

SDT5554

Abstract: SDT5502 2N3774 SDT5053 SDT5054 SDT5055 SDT5056 SDT5501 SDT5503 SDT5504
Contextual Info: 13 SILICON POWER TRANSISTORS SATURATIO N VO LTAG ES @ CURREISJT G A IN <°> V O V CBO Vi> CASE TYPE >” TYPE NUMBER V EBO hFE M IN . [ M A X. V V CE V I *C A V CE s V BE(s) V I V *C A I *B A 2 AMP SILIC O N NPN SDT5053 SDT5054 SDT5055 TO-46 TO-46 TO-46 225

SDT5055

Abstract: SDT5001 SDT5052 SDT5505 Datasheet SDT5554 SDT5010 SDT5513 2N2150 2N2151 2N3788
Contextual Info: hFE V Device VCEO @ IC A CE (sat) @ IC (A) Type (V) Min/Max Max (V) 2N2150 80 20/60 1.0 1.25 1.0 2N2151 80 40/120 1.0 1.25 1.0 2N3788 325 20/180 0.5 1.00 1.5 2N3917 40 30/120 1.0 1.20 1.0 2N3918 40 100/300 1.0 1.20 1.0 2N4300 80 30/120 1.0 0.50 0.2 2N4862

SDT423

Abstract: 2N3021 2N5076 2N5666 SDT5055 2N2150 2N2151 2N3788 2N3917 2N3918
Contextual Info: m |p tu)©Tr ©Aim ® i_ B-2 VCE sat) @ MAX (V) ic (A) IT MIN (MHz) Pj MAX (W) CASE TYPE CHIP TYPE 2N2150 2N2I51 2N3788 2N3917 2N3918 80 80 325 40 40 20/60 40/120 20/180 30/120 100/300 1.0 1.0 0.5 1.0 1.0 1.25 1.25 1.00 1.20 1.20 1.0 1.0 1.5 1.0 1.0