SCHOTTKY DIODE TO220 Search Results
SCHOTTKY DIODE TO220 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| CUHS15S40 |
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Schottky Barrier Diode (SBD), 40 V, 1.5 A, US2H | Datasheet | ||
| CUHS20F30 |
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Schottky Barrier Diode (SBD), 30 V, 2 A, US2H | Datasheet | ||
| CUHS15S60 |
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Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H | Datasheet | ||
| CLS10F40 |
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Schottky Barrier Diode (SBD), 40 V, 1 A, CL2E | Datasheet | ||
| CUHS20F60 |
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Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H | Datasheet |
SCHOTTKY DIODE TO220 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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SD-46 Diode
Abstract: Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006
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5V/10A) 500ns, SD-46 Diode Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006 | |
diode
Abstract: SC-46 schottky diode 60V 5A CB803-03 ERA81-004 ERA82-004 ERA83-004 ERA83-006 ERA84-009 ERB81-004
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5V/10A) diode SC-46 schottky diode 60V 5A CB803-03 ERA81-004 ERA82-004 ERA83-004 ERA83-006 ERA84-009 ERB81-004 | |
ultra low forward voltage schottky diode
Abstract: diode Schottky diode low voltage high current SC-46 ERA81-004 ERA82-004 ERA83-004 ERA83-006 ERA84-009 ERB81-004
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5V/10A) ultra low forward voltage schottky diode diode Schottky diode low voltage high current SC-46 ERA81-004 ERA82-004 ERA83-004 ERA83-006 ERA84-009 ERB81-004 | |
c81 004
Abstract: Diode C81 004 Schottky diode low voltage high current C81 diode diode color code diode "Power Diode" 20A schottky diode 60V 5A SC-46 ERA81-004
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5V/10A) c81 004 Diode C81 004 Schottky diode low voltage high current C81 diode diode color code diode "Power Diode" 20A schottky diode 60V 5A SC-46 ERA81-004 | |
schottky diode 60V 5A
Abstract: 30A high speed diode Schottky Diode 20V 5A Schottky diode high reverse voltage marking code 1A diode Schottky Diode 40V 2A Schottky Barrier 3A diode schottky code 10 SCHOTTKY BARRIER DIODE ERG81-004
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5V/10A) 500ns, schottky diode 60V 5A 30A high speed diode Schottky Diode 20V 5A Schottky diode high reverse voltage marking code 1A diode Schottky Diode 40V 2A Schottky Barrier 3A diode schottky code 10 SCHOTTKY BARRIER DIODE ERG81-004 | |
diode b81
Abstract: b81 004 Diode erb81-004 b81 diode diode color code ERB81-004 SC-46 ERA81-004 ERA83-006 ERA84-009
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5V/10A) diode b81 b81 004 Diode erb81-004 b81 diode diode color code ERB81-004 SC-46 ERA81-004 ERA83-006 ERA84-009 | |
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Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC6H065 O-220AC O-220AC STPSC6H065D STPSC6H065DI STPSC6H065B-TR STPSC6H065G-TR DocID023247 | |
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Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC4H065 O-220AC O-220AC STPSC4H065D STPSC4H065DI DocID023598 | |
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Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC6H065 O-220AC STPSC6H065D STPSC6H065G-TR DocID023247 | |
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Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC10H065 O-220AC STPSC10H065D STPSC10H065G-TR DocID023604 | |
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Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC10H065 O-220AC O-220AC STPSC10H065D STPSC10H065DI STPSC10H065B-TR STPSC10H065G-TR DocID023604 | |
D05S60
Abstract: Q67040S4644 SDT05S60
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SDT05S60 P-TO220-2-2. D05S60 Q67040S4644 D05S60 Q67040S4644 SDT05S60 | |
Schottky diode TO220
Abstract: SDT08S60 6260 thermal infineon 6260 Single Schottky diode TO-220 Q67040S4647
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SDT08S60 P-TO220-2-2. D08S60 Q67040S4647 Schottky diode TO220 SDT08S60 6260 thermal infineon 6260 Single Schottky diode TO-220 Q67040S4647 | |
SDT10S60Contextual Info: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery |
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SDT10S60 P-TO220-2-2. D10S60 Q67040S4643 SDT10S60 | |
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Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC8H065 O-220AC O-220AC STPSC8H065D STPSC8H065DI STPSC8H065B-TR STPSC8H065G-TR DocID023603 | |
d06s60
Abstract: diode schottky 600v T-1228 SDB06S60 SDP06S60 smd diode marking code UJ
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SDB06S60 P-TO220-3 Q67040-S4370 D06S60 d06s60 diode schottky 600v T-1228 SDB06S60 SDP06S60 smd diode marking code UJ | |
smd diode marking code UJ
Abstract: Q67040-S4370
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SDB06S60 P-TO220-3 D06S60 Q67040-S4370 smd diode marking code UJ Q67040-S4370 | |
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Contextual Info: STPSC10H065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC10H065-Y DocID026618 | |
D04S60
Abstract: P-TO252 Q67040-S4368 Q67040-S4369 Q67040-S4445 SDD04S60 SDP04S60 SDT04S60 SCHOTTKY 4A 600V
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SDP04S60, SDD04S60 SDT04S60 P-TO220-2-2. P-TO252-3-1. P-TO220-3-1. SDP04S60 Q67040-S4369 D04S60 D04S60 P-TO252 Q67040-S4368 Q67040-S4369 Q67040-S4445 SDD04S60 SDP04S60 SDT04S60 SCHOTTKY 4A 600V | |
d06s60
Abstract: T-1228 to220 pcb footprint SDB06S60 SDP06S60 SDT06S60
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SDP06S60, SDB06S60 SDT06S60 P-TO220-2-2. P-TO220-3 P-TO220-3-1. SDP06S60 Q67040-S4371 D06S60 d06s60 T-1228 to220 pcb footprint SDB06S60 SDP06S60 SDT06S60 | |
d02s60
Abstract: D02S60C SDT02S60 D02S P-TO220-2-2
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SDT02S60 P-TO220-2-2. Q67040-S4511 D02S60 d02s60 D02S60C SDT02S60 D02S P-TO220-2-2 | |
d02s60c
Abstract: Infineon power diffusion process Schottky diode TO220 ThinQ JESD22 d02s60
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IDV02S60C IDVxxS60C O220FullPAK d02s60c Infineon power diffusion process Schottky diode TO220 ThinQ JESD22 d02s60 | |
IDV03S60C
Abstract: Infineon power diffusion process Schottky diode TO220 JESD22
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IDV03S60C IDVxxS60C O220FullPAK IDV03S60C Infineon power diffusion process Schottky diode TO220 JESD22 | |
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Contextual Info: SiC Silicon Carbide Diode 2nd Generation thinQ! 2nd Generation thinQ!™ SiC Schottky Diode IDV02S60C Data Sheet Rev. 2.0, 2010-05-31 Final Industrial & Multimarket 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV02S60C Description The second generation of Infineon SiC Schottky diodes has emerged over the |
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IDV02S60C IDVxxS60C O220FullPAK | |