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    D04S60 Price and Stock

    Samtec Inc

    Samtec Inc FFMD-04-S-60.00-01

    Cable Assembly Ribbon 1.524m 8 POS IDC HDR - Bulk (Alt: FFMD-04-S-60.00-01)
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    Avnet Americas FFMD-04-S-60.00-01 Bulk 6 Weeks, 1 Days 1
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    Mouser Electronics FFMD-04-S-60.00-01
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    Sager FFMD-04-S-60.00-01 1
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    TME FFMD-04-S-60.00-01 1
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    Master Electronics FFMD-04-S-60.00-01
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    Samtec Inc HCMD-04-S-60.00-02-S

    Cable Assembly Flat Ribbon 28AWG 1.524m 8 Position IDC Connector Plug - Bulk (Alt: HCMD-04-S-60.00-02-S)
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    Avnet Americas HCMD-04-S-60.00-02-S Bulk 1 Weeks, 6 Days 1
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    Mouser Electronics HCMD-04-S-60.00-02-S
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    Sager HCMD-04-S-60.00-02-S 1
    • 1 $19.54
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    Samtec Inc IDMD-04-S-60.00-G-ST8

    - Bulk (Alt: IDMD-04-S-60.00-G-ST8)
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    Avnet Americas IDMD-04-S-60.00-G-ST8 Bulk 2 Weeks, 2 Days 1
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    Mouser Electronics IDMD-04-S-60.00-G-ST8
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    Sager IDMD-04-S-60.00-G-ST8 1
    • 1 $15.59
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    Samtec Inc TCSD-04-S-60.00-01-N

    - Bulk (Alt: TCSD-04-S-60.00-01-N)
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    Avnet Americas TCSD-04-S-60.00-01-N Bulk 1 Weeks, 6 Days 1
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    Mouser Electronics TCSD-04-S-60.00-01-N
    • 1 $14.29
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    Newark TCSD-04-S-60.00-01-N Bulk 1
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    Sager TCSD-04-S-60.00-01-N 1
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    Master Electronics TCSD-04-S-60.00-01-N
    • 1 -
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    Samtec Inc IDSD-04-S-60.00-ST8

    - Bulk (Alt: IDSD-04-S-60.00-ST8)
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    Avnet Americas IDSD-04-S-60.00-ST8 Bulk 2 Weeks 1
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    Mouser Electronics IDSD-04-S-60.00-ST8
    • 1 $15.16
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    Newark IDSD-04-S-60.00-ST8 Bulk 1
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    Sager IDSD-04-S-60.00-ST8 1
    • 1 $15.28
    • 10 $14.18
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    Find more D04S60 price and stock on Findchips.com

    D04S60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    smd diode marking f4

    Abstract: idd04
    Contextual Info: D04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features VDC 600 • Switching behavior benchmark Qc 8 nC • No reverse recovery/ No forward recovery IF 4 A • Revolutionary semiconductor material - Silicon Carbide V • No temperature influence on the switching behavior


    Original     		idd04s60c20ma2pg-to252smd diode marking f4+1idd04 PDF

    PG-TO252-3-1

    Contextual Info: SDP04S60, D04S60 SDT04S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery


    Original     		sdp04s60sdd04s60sdt04s60pg-to220-2-2+3p-to252-3-p-to220-3pg-to252-3-1 PDF

    D04S60

    Abstract: d04s6
    Contextual Info: SDP04S60, D04S60 SDT04S60 Preliminary data Silicon Carbide Schottky Diode  Worlds first 600V Schottky diode Product Summary V VRRM 600  Revolutionary semiconductor material - Silicon Carbide  Switching behavior benchmark Qc 13 nC  No reverse recovery


    Original     		sdp04s60sdd04s60sdt04s60p-to220-2-2+4p-to252-3-1p-to220-3-1d04s60d04s6 PDF

    Contextual Info: SDP04S60 D04S60 Preliminary data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery IF


    Original     		sdp04s60sdd04s60p-to252-3-1p-to220-3-1+2q67040-s4369d04s60 PDF

    Contextual Info: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV04S60C Data Sheet Rev. 2.0, 2010-01-08 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV04S60C Description


    Original     		idv04s60cidvxxs60co220fullpak PDF

    D04S60

    Abstract: P-TO252 Q67040-S4368 Q67040-S4369 Q67040-S4445 SDD04S60 SDP04S60 SDT04S60 SCHOTTKY 4A 600V
    Contextual Info: SDP04S60, D04S60 SDT04S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery


    Original     		sdp04s60sdd04s60sdt04s60p-to220-2-2+8p-to252-3-1p-to220-3-1q67040-s4369d04s60p-to252q67040-s4368q67040-s4445schottky 4a 600v PDF

    Contextual Info: IDH04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 8 nC IF 4 A • No temperature influence on the switching behavior


    Original     		idh04s60cpg-to220-2d04s60c PDF

    d04s60c

    Abstract: IDT04S60C JESD22 D04S60
    Contextual Info: IDT04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 8 nC IF 4 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		idt04s60cpg-to220-2-2d04s60cjesd22+1d04s60 PDF

    D04S60C

    Abstract: IDT04S60C JESD22 PG-TO220-2-2
    Contextual Info: IDT04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 8 nC IF 4 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		idt04s60cpg-to220-2-2d04s60cjesd22 PDF

    D04S60

    Abstract: to220 pcb footprint smd schottky diode marking 321 Schottky diode TO220 diode schottky 600v D04S60C TO252-3 material case SDP04S60 P-TO252 PG-TO252-3-1
    Contextual Info: SDP04S60, D04S60 SDT04S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery


    Original     		sdp04s60sdd04s60sdt04s60pg-to220-2-2+12p-to252p-to220p-to220-3q67040-s4369d04s60to220 pcb footprintsmd schottky diode marking 321schottky diode to220diode schottky 600vd04s60cto252-3 material casepg-to252-3-1 PDF

    D04S60C

    Abstract: IDH04S60C JESD22
    Contextual Info: IDH04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 8 nC IF 4 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		idh04s60cpg-to220-2d04s60cjesd22 PDF

    D04S60C

    Abstract: TO252-3 material case to252-3-11 IDD04S60C infineon msl DIODE smd marking Ag TO252 rthjc JESD22 smd diode f4 51 D04S60
    Contextual Info: D04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 8 nC IF 4 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		idd04s60cpg-to252d04s60cto252-3 material case+7to252-3-11infineon msldiode smd marking agto252 rthjcjesd22smd diode f4 51d04s60 PDF

    D04S60C

    Abstract: diode it25
    Contextual Info: IDH04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 8 nC IF 4 A • No temperature influence on the switching behavior


    Original     		idh04s60cpg-to220-2d04s60cdiode it25 PDF

    Infineon power diffusion process

    Abstract: Schottky diode TO220 D04S60C JESD22
    Contextual Info: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV04S60C Data Sheet Rev. 2.0, 2010-01-08 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV04S60C Description


    Original     		idv04s60cidvxxs60co220fullpakinfineon power diffusion process+3schottky diode to220d04s60cjesd22 PDF

    DSA0032037

    Abstract: PG-TO252-3-1
    Contextual Info: SDP04S60, D04S60 SDT04S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery


    Original     		sdp04s60sdd04s60sdt04s60pg-to220-2-2+3pg-to252-3-1pg-to220-3-1dsa0032037 PDF

    PG-TO252-3-1

    Abstract: PG-TO-252-3-1
    Contextual Info: SDP04S60, D04S60 SDT04S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery


    Original     		sdp04s60sdd04s60sdt04s60pg-to220-2-2+3pg-to252-3-1pg-to220-3-1pg-to-252-3-1 PDF

    Contextual Info: D04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features VDC 600 • Switching behavior benchmark Qc 8 nC • No reverse recovery/ No forward recovery IF 4 A • Revolutionary semiconductor material - Silicon Carbide V • No temperature influence on the switching behavior


    Original     		idd04s60cpg-to25220ma2 PDF

    P-TO252

    Abstract: D04S60 diode schottky 600v TO252 rthjc Q67040-S4368 Q67040-S4369 SDD04S60 SDP04S60 SDT04S60
    Contextual Info: SDP04S60, D04S60 SDT04S60 Preliminary data Silicon Carbide Schottky Diode  Worlds first 600V Schottky diode Product Summary  Revolutionary semiconductor V 600 VRRM material - Silicon Carbide  Switching behavior benchmark Qc 13 nC  No reverse recovery


    Original     		sdp04s60sdd04s60sdt04s60p-to220-2-21+8p-to252-3-1p-to220-3-1q67040-s4369d04s60p-to252diode schottky 600vto252 rthjcq67040-s4368 PDF

    to220 pcb footprint

    Abstract: D04S60 P-TO252 Schottky diode TO220 d 1398 infineon 6260 TO252-3 rthjc Q67040-S4368 Q67040-S4369 Q67040-S4445
    Contextual Info: SDP04S60, D04S60 SDT04S60 Final data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery


    Original     		sdp04s60sdd04s60sdt04s60p-to220-2-2+12p-to252-3-1p-to220-3-1q67040-s4369d04s60to220 pcb footprintp-to252schottky diode to220d 1398infineon 6260to252-3 rthjcq67040-s4368q67040-s4445 PDF

    D04S60C

    Abstract: IDV04S60C
    Contextual Info: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV04S60C Data Sheet Rev. 2.0, 2010-01-08 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV04S60C Description


    Original     		idv04s60cidvxxs60co220fullpakd04s60c PDF

    D04S60

    Abstract: smd schottky diode marking 321 PG-TO252-3-1 2t -3-6-5 smd PG-TO-252-3-1 SDP04S60 SCHOTTKY 4A 600V
    Contextual Info: SDP04S60, D04S60 SDT04S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery


    Original     		sdp04s60sdd04s60sdt04s60pg-to220-2-2+9p-to252p-to220p-to220-3d04s60smd schottky diode marking 321pg-to252-3-12t -3-6-5 smdpg-to-252-3-1schottky 4a 600v PDF

    Contextual Info: IDT04S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark Qc 8 nC • No reverse recovery/ No forward recovery I F @ T C < 140°C 4 A I F @ T C < 100°C 6 A • Revolutionary semiconductor material - Silicon Carbide


    Original     		idt04s60cpg-to220-2-2 PDF

    D04S60C

    Abstract: D04S60 Q67040-S4368 Q67040-S4369 Q67040-S4445 SDD04S60 SDP04S60 SDT04S60 SCHOTTKY 4A 600V
    Contextual Info: SDP04S60, D04S60 SDT04S60 Final data Silicon Carbide Schottky Diode  Worlds first 600V Schottky diode Product Summary V VRRM 600  Revolutionary semiconductor material - Silicon Carbide  Switching behavior benchmark Qc 13 nC  No reverse recovery IF 4


    Original     		sdp04s60sdd04s60sdt04s60p-to220-2-2+8p-to252-3-1p-to220-3-1q67040-s4369d04s60d04s60cq67040-s4368q67040-s4445schottky 4a 600v PDF