SCHOTTKY DIODE 400V 15A Search Results

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

MYXDS1200-15ABS

Abstract: silicon carbide
Contextual Info: Silicon Carbide Schottky Diode 1200 Volt 15 Amp Hermetic MYXDS1200-15ABS y r a in Product Overview Features Benefits • High voltage 1200V isolation in a small package outline • Essentially no switching losses • Higher efficiency • Reduction of heat sink requirements

vogt

Abstract: fi324 Resistor R1206 vogt -sumida 200v 3A schottky 380v bcb56b C0805 100nf capacitor kmg KMG 200V
Contextual Info: Ref. Q.ty CONI 1 Variant Clamp, WECO, 2 pole, horizontal, 1.5mm2, 380V, 15A CON2 1 Clamp, WECO, 3 pole, horizontal, 1.5mm2, 380V, 15A C1 1 22pF Electrolytic capacitor, Nippon Chemi-Con, KMG 400V, 20% C2 1 10pF Electrolytic capacitor, Nippon Chemi-Con, KMG 400V, 20%

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

S11V

Abstract: Schottky diode TO220 15A 1000V 5tuz47 diode diode schottky 1000V 2a lead 5TUZ47 DO-41SS 20GWJ2CZ47 rectifier 5A 1000V DIP 1R5DL41A 20L6P45
Contextual Info: 1 NEW PRODUCTS DIGEST High-Breakdown Voltage 400V, 600V , Hlgh-Efficlency Diode (HEP) For prim ary flywheel use (600V) and secodary rectification use (400V) in com pact, high-efficiency switching pow er supplies. 5GLZ47A : V rrm = 4 0 0 V , IF(av) = 5A, trr« 5 n s

Contextual Info: S6207 Data Sheet SiC Schottky Barrier Diode Bare Die VR 650V IF 15A*1 23nC QC lFeatures lInner circuit C 1) Shorter recovery time 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type

Contextual Info: SCS215AM Data Sheet SiC Schottky Barrier Diode lOutline VR 650V IF 15A QC 23nC TO-220FM 2 (1) lFeatures lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) lPackaging specifications

SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A

Abstract: data sheet IC 7450 APT30GP60BSC T0-247 APT10SC60
Contextual Info: TYPICAL PREFORMANCE CURVES APT30GP60BSC APT30GP60BSC 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode

IC 7448

Abstract: data sheet IC 7448 7448 ic cathode drivers 7448 datasheet IC 7448 APT15GP60BSC Schottky Diode 400V 15A 7448 ic data sheet 7448 p ic T0-247
Contextual Info: TYPICAL PERFORMANCE CURVES APT15GP60BSC APT15GP60BSC 600V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

APTC80H29SCT

Contextual Info: APTC80H29SCT Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 800V RDSon = 290mW max @ Tj = 25°C ID = 15A @ Tc = 25°C Application • Motor control · Switched Mode Power Supplies · Uninterruptible Power Supplies VBUS

ucqs10a065

Abstract: UCQS20A045 UCHS10A065 ucqs UCF10A40 UCHS30A08 smps new UCHS30A12 ucqs30a045 600va
Contextual Info: •I II ■I m m .m m m 11 Low Height Profile,Low Thermel Res stance I J H 45 88 / Features • / \ V* — • g S M b C tfft Package thickness of as thin as 1.7mm for portable equipments • / N V ^ - v f f 1 # - T O - 2 6 3 L P / T O - 2 6 3 i t K T '4 0 % l i C '

APT0406

Abstract: APT0501 APT0502 APTC80H29SCTG DIODE S4 75a 75AVGS
Contextual Info: APTC80H29SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 800V RDSon = 290mΩ max @ Tj = 25°C ID = 15A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies

bridge rectifier 24V AC to 24v dc

Abstract: 1N5408 smd diodes GSIB1560
Contextual Info: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4

Contextual Info: APTC80H29SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 800V RDSon = 290m max @ Tj = 25°C ID = 15A @ Tc = 25°C Application • Motor control  Switched Mode Power Supplies  Uninterruptible Power Supplies

ntc2.5 thermistor

Abstract: ntc1.0 NTC1 Thermistor
Contextual Info: APTC80H29SCT Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 800V RDSon = 290mΩ Ω max @ Tj = 25°C ID = 15A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies

SCS215AJ

Contextual Info: SCS215AJ Data Sheet SiC Schottky Barrier Diode lOutline VR 650V IF 15A QC 23nC LPT L <TO-263AB> (1) (2) (3) (4) lFeatures lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) N / C (3) Cathode (4) Anode 3) High-speed switching possible

SCS215AM

Contextual Info: SCS215AM Data Sheet SiC Schottky Barrier Diode lOutline VR 650V IF 15A QC 23nC TO-220FM 2 (1) lFeatures lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) lPackaging specifications

Contextual Info: APTC80H29SCTG VDSS = 800V RDSon = 290mΩ max @ Tj = 25°C ID = 15A @ Tc = 25°C Full – Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VBUS CR1A CR1B Q1 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies

Contextual Info: Preliminary Technical Information IXGH48N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 48A 2.5V 38ns High Speed PT IGBT for 40 - 100kHz Switching TO-247 Symbol Test Conditions VCES TJ = 25°C to 150°C 600

mosfet 600V 30A

Abstract: IGBT 400V 100KHZ 30A APT30GS60BRDQ2 MIC4452 MOSFET 40A 600V
Contextual Info: APT30GS60BRDQ2 G APT30GS60SRDQ2(G) 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low

DIODE SMD 5050

Abstract: smd led 5050 SMD LED 5050 datasheet DO-219AB footprint SMD LED 5050 datasheet smd led smd 6 led 5050 datasheet led smd 5050 5050 SMD LED DIODE led SMD 5050 DO-219AB footprint SMD LED 5050 smd led smps ic smd 8 pin
Contextual Info: V I S H A Y I N T E R T E C H N O L O G Y, I N C . AUTOMOTIVE APPLICATIONS SOLUTIONS MARKET SEGMENT w w w. v i s h a y. c o m Automotive Applications Solutions from Vishay Intertechnology Introduction Body Electric & Comfort Electric Sensors Immobilizer & Security Systems

IXGH36N60B3C1

Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGH36N60B3C1 = = ≤ = 600V 36A 1.8V 100ns Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES

Contextual Info: APT30GS60BRDL G 600V, 30A, VCE(ON) = 2.8V Typical Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower

MOSFET welding INVERTER 200A

Abstract: Mosfet 30A 300V APT30GS60BRDL MIC4452 single phase igbt based WELDING inverter 200 amps SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A
Contextual Info: APT30GS60BRDL G 600V, 30A, VCE(ON) = 2.8V Typical Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower