SCE2 Search Results

CX06835-36

Abstract: CX06835 CX06835-16 CX06835-25 SCE214-VS CX06835-45 conexant CX06835-13 conexant CX06835-25 CX06835-15
Contextual Info: 102580A January 6, 2005 CX06835-13, CX06835-14, CX06835-15, CX06835-16, and CX06835-25 Last Time Buy Notice Products Affected: CX06835-13 SCE214-VS , CX06835-14 (SCE214-V), CX06835-15 (SCE214), CX06835-16 (SCE214), and CX06835-25 (SCD109) Conexant Systems, Inc. is committed to offering its valued customers quality products at the lowest

Contextual Info: SCE25 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current.25 @Temp (øC) (Test Condition)55’ V(RRM)(V) Rep.Pk.Rev. Voltage2.5k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.10 V(FM) Max.(V) Forward Voltage3.5 @I(FM) (A) (Test Condition).10 @Temp. (øC) (Test Condition)25’

SCE200AA160

Abstract: SCA200AA160 thyristor sanrex SCA200AA160 sanrex THYRISTOR thyristor sanrex SCE200AA isolated gate Thyristor sce200 SCA200AA80 high power thyristor Vdrm 6000
Contextual Info: SanRex Thyristor/Thyristor Thyristor/Diode SCA200AA, SCE200AA IT AV = 200A, VRRM= 800 - 1800V SanRex Thyristor/Thyristor (SCA series), Thyristor/Diode (SCE series) are designed for general purpose high voltage applications. The modules are an Isolated Industrial

Contextual Info: SCE20 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current.25 @Temp (øC) (Test Condition)55’ V(RRM)(V) Rep.Pk.Rev. Voltage2.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.10 V(FM) Max.(V) Forward Voltage3.5 @I(FM) (A) (Test Condition).10 @Temp. (øC) (Test Condition)25’

Contextual Info: SCE2 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)55ï V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)1.0 @Temp. (øC) (Test Condition)25

Contextual Info: SCE25A Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current.15 @Temp (øC) (Test Condition)55’ V(RRM)(V) Rep.Pk.Rev. Voltage2.5k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.6.0 V(FM) Max.(V) Forward Voltage6.0 @I(FM) (A) (Test Condition).10 @Temp. (øC) (Test Condition)25’

IS61LV6424

Contextual Info: ISSI IS61LV6424 64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 9, 10, 12, 15 ns • CMOS low power operation ❑ 594 mW max. operating @ 9 ns ❑ 36 mW (max.) CMOS standby • TTL compatible interface levels • Single 3.3V power supply

LM320A

Abstract: SD13 SD14 SD15 SN74LV4320A SN74LV4320AGKFR A10-A00 D07-D00 SCE1
Contextual Info: SN74LV4320A LOWĆPOWER, DUALĆSUPPLY, LEVELĆTRANSLATING CompactFlash INTERFACE WITH 16ĆBIT DATA, 11ĆBIT ADDRESS, AND 13ĆBIT CONTROL LINES SCES628 − APRIL 2005 D Member of the Texas Instruments D D D D D Ioff Supports Partial-Power-Down Mode Widebus+ Family

Contextual Info: CF4320H CompactFlash BUS-INTERFACE CHIP WITH ±15-kV ESD PROTECTION, TRANSLATION, AND CARD-DETECT CIRCUITRY www.ti.com SCES655A – APRIL 2006 – REVISED AUGUST 2006 FEATURES • • • • • • • ±15-kV Human-Body Model HBM ESD Protection on Card Side

LRS1830

Contextual Info: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1830 Stacked Chip 256M x16 Boot Block Flash and 32M (x16) SCRAM (Model No.: LRS1830) Spec No.: EL14Z046 Issue Date: January 14, 2003 sharp L R S1 8 3 0 x Handle this document carefully for it contains material protected by international copyright law.

52PTF

Contextual Info: Renesas LSIs M6MG3B/T641S16TP 67,108,864-BIT 4,194,304-WORD BY 16-BIT / 8,388,608-WORD BY 8-BIT CMOS FLASH MEMORY & 16,777,216-BIT (1,048,576-WORD BY 16-BIT / 2,097,152 -WORD BY 8-BIT) CMOS SRAM Stacked- µMCP (micro Multi Chip Package) DESCRIPTION The M6MG3B/T641S16TP is a Stacked micro Multi Chip

Contextual Info: Renesas LSIs M6MGB/T321S8TP 33,554,432-BIT 2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT CMOS 3.0V-ONLY FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT) CMOS SRAM Stacked - µ MCP (micro Multi Chip Package) Description M6MGB/T321S8TP provides for Software Lock Release

32M Nonvolatile SRAM

Contextual Info: Renesas LSIs M6MGB/T32BS4AWG 33,554,432-BIT 2,097,152-WORD BY 16-BIT CMOS FLASH MEMORY 4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM & Stacked-CSP (Chip Scale Package) Description The M6MGB/T32BS4AWG is suitable for a high performance cellular phone and a mobile PC that are required to be small

S2103

Abstract: S2104
Contextual Info: IS61LV6424 64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 9, 10, 12, 15 ns • CMOS low power operation — 594 mW max. operating @ 9 ns — 36 mW (max.) CMOS standby • TTL compatible interface levels • Single 3.3V power supply

BV725

Abstract: BV726 SKIC2001 semikron SKIC SKIC2001A u416 LM78C LM78C05ACM GL11 RESISTOR ARRAY GL11
Contextual Info: Values Units 18 V SEMIDRIVER IGBT Driver Circuit SKIC 2001 6 V Preliminary Data VDD5V + 0,3 GND - 0,3 13,5 V V V 50 – 25 . + 85 kHz °C Values Units 15 + 5 % 5+5% 9,99 . 10,01 V V V 3 15 860 mA mA ns Absolute Maximum Ratings Ta = 25 °C Symbol Term

Contextual Info: Date Aug. 8. 2001 64M x16 Flash + 8M (x16) SRAM LRS1387 sharp L R S1 3 8 7 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission

LRS1826A

Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1826A Stacked Chip 128M x16 Boot Block Flash and 32M (x16) SCRAM (Model No.: LRS1826A) Spec No.: EL147034C Issue Date: October 4,2002 sharp L R S1 8 2 9 x Handle this document carefully for it contains material protected by international copyright law.

LRS1806C

Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1806C Stacked Chip 64M x16 Boot Block Flash and 16M (x16) SCRAM (Model No.: LRS1806C) Spec No.: EL14X024 Issue Date: October 10, 2002 sharp L R S1 8 3 6 x Handle this document carefully for it contains material protected by international copyright law.

LRS13A0

Contextual Info: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LRS13A0 Stacked Chip 128M x16 Flash and 16M (x16) SRAM (Model No.: LRS13A0) Spec No.: MFM2-J14Y10A Issue Date: March 17, 2003 sharp L R S 13 A0 x Handle this document carefully for it contains material protected by international copyright law.

LRS1331B

Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1331B Stacked Chip 16M x16 Boot Block Flash and 4M (×16) SRAM (Model No.: LRS1331B) Spec No.: EL127037 Issue Date: July 6, 2000 sharp LRS1331B • Handle this document carefully for it contains material protected by international copyright law.

Contextual Info: IS61C64AH 8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION The ICSI IS61C64AH is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ICSI's • High-speed access time: 15, 20, 25 ns • Automatic power-down when chip is

ASF1

Abstract: LRS1834
Contextual Info: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1834 Stacked Chip 96M x16 Boot Block Flash and 32M (x16) SCRAM (Model No.: LRS1834) Spec No.: MFM2-J14801 Issue Date: August 29, 2002 sharp L R S1 8 3 4 x Handle this document carefully for it contains material protected by international copyright law.

Contextual Info: ISSI IS61LV3224 32K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 9, 10, 12, 15 ns • CMOS low power operation ❑ 594 mW max. operating @ 9 ns ❑ 36 mW (max.) CMOS standby • TTL compatible interface levels • Single 3.3V power supply

7c186

Abstract: CY7C185-15VC die 7C185
Contextual Info: CY7C185 CY7C186 CYPRESS SEMICONDUCTOR Features 8,192 x 8 Static R/W RAM the memory. When CEj and WE inputs are both LOW and CE2 is H IG H , data on the The CY7C185 and CY7C186 are high-per- eight data input/output pins I/Oo through 1/ formanceCMOS static RAMs organized as O7 is written into the memory location ad8192 words by 8 bits. Easy memory expan­ dressedby the address present on the address