U416 Search Results

Contextual Info: LUHEX OPTO/COMPONENTS INC 2^ D • Sblbll3 OQOObTl *! -33 OVERFLOW NUMERIC DISPLAYS SING LE DIGIT SER IES 0.43" LDF-U41XÌ Lumex Part Number Line Item Universal Common Overflow 1 LDF-U411LI 2 LDF-U412LI 3 LDF-U413LI 4 LDF-U414LI 5 LDF-U415LI 6 LDF-U416LI Ta=25°C

Contextual Info: Enhanced H IV f e m o iy S u t e r n s DM512K64DTBDM512K72DTE Multibank Burst EDOEDRAM 5 12Kb x 64/512Kb x 72 Enhanced DRAM DIMM b e . Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache

sis 962l

Abstract: 301LV 93lc468 SIS 740 sc728 RT8110 sis962l CMI9739A lc949 CMI9739
Contextual Info: 5 4 3 2 1 Power Now Clock Gen. PAGE 5 AMD Mobile Duron CPU RTC,VCC3,VCC5 PAGE 10 Sideband Bus SYSTEM POWER PAGE 22 PAGE 38 Thermal D D PAGE 2,3,4 Clock Buffer CHARGER &SELECTOR PAGE 11 PAGE 34 S2K Bus CRT North Bridge PAGE 15 BAT.LOW&OVER.T Memory Bus SiS 740

CQX 86

Abstract: U832 write-verify RaR8 81 u218 A09T
Contextual Info: DM512K64DTE/DM512K72DTE Multibank Burst EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

39-R0

Abstract: u414
Contextual Info: U400_C.qxd 14/5/03 8:28 am Page 1 Vitreous Enamelled Heavy Duty Tapewound Resistors Welwyn Components U400 Series • Very low resistance values • Choice of terminations and mounting styles • High overload capability General Information The U400 Series of resistors is particularly suitable for

Contextual Info: Enhanced DM1M64DTE/DM1M72DTE M ultibank Burst EDOEDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM IVfemoiy Suterns be. H Product Specification Features row register over a 2Kbyte-wide bus in just 18ns for an effective cache • 16Kbytes SRAM Cache Memory for 12ns Random Reads Within

U10A-14

Abstract: U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318
Contextual Info: DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

PJ 52

Abstract: U1615 U18-18 u1515 U23D-43 U176 U21-18 u1818 L115 U218
Contextual Info: Enhanced Memory Systems Inc. DM1M64DT6/DM1M72DT6 Multibank EOO EDRAM 1Mb x fflM b x 72 Enhanced DRAM DIMM Product Specification Features • l 6Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

soow

Abstract: H07RNF S2121 u3212 H07RN-F U401407CP S2229 S2116 H05V-K U4160501
Contextual Info: 540-2012:QuarkCatalogTempNew 8/23/12 12:54 PM Page 540 POWER ENCLOSURES WIRE & CABLE TEST & MEASUREMENT 3 Harmonized Hook-Up Wire, Power Cordage and Multiconductor Cable Hook-Up Wire RoHS Harmonized and CE for export and UL/CSA for domestic use. Technical Data — Temperature Rating: UL/CSA: –40°C to +105°C; <HAR>: –40°C to +70°C. Nominal Voltage: HAR/IEC: 500 V H05V-K ; 750 V (H07V-K) and UL/CSA: 300 V (H05V-K)/600 V (H07V-K). Construction — Conductor: Fine class 5 stranded

U23C-36

Contextual Info: •K p n h o n p p f V i i DM 1M64DT6/DM1M72DT6 Multibank EDOEDRAM m m * d 1 2 ra m d i m m ProductSpecification Features ■ 16Kbytes SAM Cache Memory for 12ns Random Reads Within Eght Active Pages Multi bank CSche ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

Contextual Info: Part No. D igit Com m on Anode C a th o d e BS-A411RD BS-C411RD Red A415RD C415RD Bright Red D ra w in g W ave Le n g th C o lo r Size 0.43" Com m on E le c tro -O p tic a l A b s o lu te M a x im u m P eak E m itte d Xp nm AX Typ, M ax, Iv Typ, Per Seg

Contextual Info: Vitreous Enamelled Heavy Duty Tapewound Resistors Welwyn U400 SERIES • Very low resistance values • Choice of terminations and mounting styles • High overload capability GENERAL INFORMATION Each style is available with the following choice of The U400 Series of resistors is particularly suitable

U1615

Abstract: u1515 U24A U20-16 U217 U1613 U23C-36 U16-18 U17-16 transistor BMO 123
Contextual Info: DM1M64DT6/DM1M72DT6 Multibank EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

Contextual Info: COMPONENTS / , - . . . . :i, * 'i ;»s>ewo unci Re s.isi.ors High stability and reliability Withstands repeated heat cycling without damage Very low resistance values Choice of terminations and mounting styles High overload capability GENERAL INFORMATION The U400 Series of resistors is particularly suitable for overload applications, due to the large energy absorption capability of the heavy tape element

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

u416

Abstract: u417 u413 U415 U415 tube marking code MD5
Contextual Info: Vitreous Enamelled Heavy Duty Tapewound Resistors Welwyn Components U400 Series • Very low resistance values • Choice of terminations and mounting styles • High overload capability General Information The U400 Series of resistors is particularly suitable for

ESI 2160

Abstract: u332 U11B2 cqx 87 u918
Contextual Info: Enhanced Memory Systems Inc. DM512K64DÎ6/DM512K720T6MultibankEDO EDRAM 512Kb x6 4 /5 m x 72 EnhancedDRAM D m Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

U412

Abstract: 2R25 u400 U415 tube
Contextual Info: U400_D.qxd 8/9/04 4:55 PM Page 1 Vitreous Enamelled Heavy Duty Tapewound Resistors Welwyn Components U400 Series • Very low resistance values • Choice of terminations and mounting styles • High overload capability General Information The U400 Series of resistors is particularly suitable for

U415

Abstract: U4-15 u416
Contextual Info: Vitreous Enamelled Heavy Duty Tapewound Resistors U400 SERIES ● Very low resistance values ● Choice of terminations and mounting styles ● High overload capability GENERAL INFORMATION Each style is available with the following choice of terminations:-

CQX 86

Abstract: U1615 U2-14 U217 u416 CQX 89 CQv 89 512kx8 dram simm u332 u1515
Contextual Info: DM1M64DTE/DM1M72DTE Multibank Burst EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

Contextual Info: Enhanced IVfemoiySuterns be. DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 12 Enhanced DRAM DIMM Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multi bank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

CHU4164-QEG

Abstract: "UP Converter" 2loif U4164 AN0017 MO-220
Contextual Info: U4164-QEG RoHS COMPLIANT 17-27GHz Up Converter GaAs Monolithic Microwave IC in SMD package Description The U4164-QEG is an I/Q up converter, which integrates a balanced cold fet mixer, and a time two multiplier. It is designed for a wide range of applications,