SB TRANSISTORS Search Results

Contextual Info: Transistors Low Frequency Transistor 20V, 5A 2 SB 1386 / 2 SB 1412 / 2 SB 1326 / 2 SB 1436 • E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(sat). 2SB1412 2SB1386 VcE(sai) = -0 .3 5 V (Typ.) 2 ^2 6 .5 ± 0 .2 (|C/ | B = - 4 A / - 0 . 1 A )

2SB1233

Abstract: 2SB1233A
Contextual Info: Power Transistors 2 SB 1233 , 2 SB 1233 A 2SB 1233, 2SB1233A Silicon PNP Epitaxial Planar Type Package Dimensions P&wer Amplifier Unit : mm • Features • High co llector-em itter voltage 3.7max. 7.3max. V ceo 0.9 ± 0 . 1 O.Smax.- • Wide area of safety operation (ASO)

video output transistor

Abstract: VP401 transistor 2sd1878 2SD1878 video output transistors
Contextual Info: Discrete Devices for Monitors Principal Process Technologies—Features/Functions V ideo output transistors [FB E T /L SB T ] D ouble-layer electrode structure for high fT, low capacitance and high w ithstand voltage. H orizontal deflection output transistors

UC493

Abstract: UC493AC unitrode Applications Note U-96A 3.9V ZENER DIODE unitrode Applications Note uc493a UC494
Contextual Info: 9347963 UNITRODE CORP 92D 09860 D T-SB-//-3I LINEAR INTEGRATED CIRCUITS u g g ft Jjggjftg Advanced Regulating Pulse Width Modulators UC495A UC495B UC495AC UC495BC D • TBHÖSII QQÜTÖbQ 7 ■UNI FEATURES • Dual uncommitted 40V, 200mA output transistors

ISO ultrasonic sensor standards symbols

Abstract: automatic brake failure indicator and engine heating alarm ir remote control ROBOt project report omron plc CQM1H CPU 51 dip switch selection project report on pick and place robot simple pick and place robotic arm cylindrical robot arm omron hmi ccs c pt100 DRT2-MD32ML
Contextual Info: Industrial Automation Products SB IAMSG-4 2005 OmronElectronics LLC Printed in the U.S.A. 1/05/30M, 10M Master Selection Guide PHOTOELECTRIC SENSORS AMPLIFIED PHOTOMICROSENSORS PROXIMITY SENSORS LIMIT SWITCHES OTHER SENSOR SOLUTIONS PUSHBUTTONS, SWITCHES AND PILOT

Contextual Info: I I b^E D • bb53T31 DD27^Sb 43H H A P X JA100 JA101 A PNP SMALL-SIGNAL TRANSISTORS PNP small-signal transistors in TO-92 envelopes, recommended for general purpose amplifier applications. The complementary types are the JC500 and JC501 respectively. QUICK REFERENCE DATA

ON SEMICONDUCTOR 613

Abstract: metal oxide in capacitor
Contextual Info: 0.7µ µm 5V CMOS Process ID: SA/SB [C08n] Applications Main Process Flow • Mixed signal embedded systems / • N Substrate systems on a chip SOC . • Twin Wells • High precision mixed signal circuits.

Contextual Info: HARRIS SEHICOND BD242, BD242A, BD242B, BD242C Sb E D • 43D2271 SECTOR File Number 0G4Dbb4 672 SGb « H A S Epitaxial-Base Silicon P-N-P VERSAWATT Transistors For Power-Amplif ier and High-Speed-Switching Applications Features: ■ 40 W at 2S°C case temperature

2SC2570

Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135
Contextual Info: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­

2n6673

Abstract: 2n6671 RCA8767
Contextual Info: 7=35 ~ / 9 2N6671, 2N6672, 2N6673 HARRIS SEMICON] SECTOR File Number Sb E D 1090 43 D2 271 GOMObOfl 7fl7 « H A S 5-A SwitchM a* Power Transistors T -3 3 -3 1 High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications

BDT65CF

Abstract: BDT65AF 65AF BDT64AF BDT64BF BDT64CF BDT64F BDT65BF BDT65F BDT65C
Contextual Info: BDT65F; BDT65AF ^^BDT65BF; BDT65CF PHILIPS INTERNATIONAL SbìT] I 7110ä 2b 00432^0 M S ’ì I I P H I N T - 3 3 ~z°l SILICON DARLINGTON POWER TRANSISTORS N PN silicon darlington power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting

Contextual Info: TP2010L, TP2410L P-Channel Enhancement-Mode MOS Transistors SB;SSä PRODUCT SUMMARY TO-92 TO-226AA V(BR)DSS PART NUMBER V BOTTOM VIEW *D (A) TP2010L -200 10 -0.18 TP2410L -240 10 -0.18 ,1 2 3 . 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VPDV24 1^3 I 1—

2SB1255

Abstract: 2SB1155 2SD1706
Contextual Info: Power Transistors 2 SB 1 1 5 5 2SB1155 Silicon PNP Epitaxial Planar Type Package Dim ensions Pow er Switching C om plem entary Pair with 2 S D 1 706 Unit : mm 5 2max. . 15.5max. • Features 6.9min. 1 ¡ -fe r z i- • Low collector-eim itter saturation voltage VcE<sao

Contextual Info: m bZMTflSb GGlS^Sb 3 ^ • HITE MITSUBISHI ELEK LINEAR MITSUBISHI ICs (AV COMMON) M54573L bSE 1> TUNER BAND DECODER/DRIVER DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M54573L is a semiconductor integrated circuit capable of three-band switching in TV and VCR tuners.

RCA 40251

Abstract: 2N3055H 2N3055H RCA 2n6254 2N6253 2N6371 40251 2N637 2N6371 RCA rca 2n6254
Contextual Info: SEMELAB y i ï i l Sb' POWER T R A N S IS T O R S 2N3055H, 2N 6253, 2N 6254, 2N6371, 40251 H om etaxial*Base High-Power Silicon N-P-N Transistors • 2 N 6 2 5 4 : premium type from 2N3055H family Rugged, Broadly Applicable Devices For Industrial and Commercial Use

FET BFW10

Abstract: BFW10 pins OF FET BFW11 OF FET BFW10 BFW10 FET BSV81 BF327 BFW10 FET transistor BFS28 FET BFW11
Contextual Info: Transistors silicon n-channel field effect transistors Type No. Drawing reference book 1 parts 1 and 2 e c 3 O VDB v SB V (V ) M axim um Ratings - VgBM 1dm Tj m ax. (V ) (m A) (°C ) Special Features Pt„t rOSion) 1'DStoffl at 25°C (mW) (£2) (£ï) INSULATED GATE FET (MOST)

MJE13007E

Abstract: JE13006 MJE13Q07 JE13007
Contextual Info: MOTOROLA SC XSTRS/R 1EE F D I b3b72S4 a G fl SB T S ê | T - 33-13 MOTOROLA MJE13006 MJE13007 SEMICONDUCTOR TECHNICAL DATA D esigners Data, Sheet 8 AM PERE NPN SILICON POWER TRANSISTORS 3 00 and 4 0 0 V O L T S 80 W ATTS SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS

transistor ecg246

Abstract: ECG251 ECG2317 ECG252 ECG246 ecg 126 transistor ECG260 ecg253 ECG245 ECG247
Contextual Info: PH IL IP S E C G INC SME D • Darlington Power Transistors Description NPN PIMP Collector To Base Volts BVc b O Emitter To Base Volts BVEBO Collector To Emitter Volts b v Ceo Max. Collector Current 1C Amps bb SB ^ f l GO OT l b B TbS m Z C G Maximum Ratings at T c =25°C

B806

Contextual Info: NEC S IL IC O N T R A N S IS T O R S ELECTRON DEVICE 2 SB 8 0 5 ,2 S B 80 6 PNP SILICON EPITAXIAL TRANSISTORS POWER M IN I MOLD DESCRIPTION The 2SB805 and 2SB806 are designed fo r audio frequency power am p lifie r application, especially in H yb rid Integrated Circuits.

30BF

Abstract: TIP30DF TIP3 TIP29AF TIP29BF TIP29CF TIP29DF TIP29F TIP30AF TIP30BF
Contextual Info: TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF PHILIPS INTERNATIONAL Sb E D I 7110ä2b 00M34bb 700 « P H I N SILICON EPITAXIAL POWER TRANSISTORS T - & - IT PNP silicon power transistor in a S O T 186 envelope w ith an electrically insulated mounting base, for use in audio output stages and for general purpose am plifier and high-speed switching applications.

T-43-25

Contextual Info: GEC PLESSEY SEMICONDS 43E D MM 37bôS22 D O I B ^ Û 3 BIPL SB " T '4 3 >-Z<5 GEC PLESSEY S E M I C O N D U C T O R S SL2363 & SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2363C and SL2364C are arrays of transistors internally connected to torm a dual long-tailed pair with tail

SL3045C

Contextual Info: GEC PLESSEY SEMICONDS 43E D • 37böS22 0D134ÖD H M Pl-SB " T m - i S GEC PLESSEY ¡ S E M I C O N D U C T O R S SL3245 3GHz NPN TRANSISTOR ARRAY The SL3245 is a m onolithic array of five high frequency low current NPN transistors. The SL3245 consists of 3 isolated

BD977

Abstract: BD975 Q62702-D966 BD 976 BD979 QQG4457 Q62702-D964 BD 202 transistors
Contextual Info: T> m fl23 Sb 05 QQ044SS 0 « S I E 6 r 1 NPN Silicon Darlington Transistors SSC SIEMENS AKTIENGESELLSCHAF T-33-29 BD 975 BD 977 0 - BD 979 ^ 25 BD 975, BD 977, and BD 979 are epitaxial NPN silicon planar darlington transistors in plastic package similar to TO 202. These darlington transistors aredesigned for relay drivers

RCA 2N5322

Abstract: rca 2n3772 RCA-1N1763A RCA-2N2102 CA3085-SERIES 1N1763 RCA-2N5322 voltage regulator ca3085a ca3085a40v 1N1763A
Contextual Info: CA3085, CA3085A CA3085B SB HARRIS S E M I C O N D U C T O R Positive Voltage Regulators from 1.7V to 46V at Currents Up to 100mA May 1992 Features Description • Up to 100mA Output Current The CA3085, CA3085A, and CA3085B are silicon monolithic Integrated