SA130 Search Results

Contextual Info: 10/24/97 TOKO No: SA130ZA-004 Surface Acoustic Wave Filter Preliminary 1. Overall Dimensions 1.8 max N 4.8 0.8 — N •+rr~ irn} Unit: mm Input : 10 Output : 5 Ground : 4,9 < < § WN5 Tolerance: ±0.2 2. Electrical Characteristics Units Min. Typ. Max. 2.1

Contextual Info: Part: SA130C Series: 500W Axial Leaded TVS Diode - SA Series Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 3.00 Maximum Temperature Max Temp (°C )

Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 PRODUCT/PROCESS CHANGE NOTICE PCN August 27, 2013 MEANS OF DISTINGUISHING CHANGED DEVICES: PCN #: SA1308-01 DATE: Product Affected: Product Mark ACS3x, ACS4x and ACS5x product

Contextual Info: Part: SA130CA Series: 500W Axial Leaded TVS Diode - SA Series Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 3.00 Maximum Temperature Max Temp (°C )

13630

Abstract: TVS13 TH 9589
Contextual Info: Transient Voltage Suppressors Microsemi I Part Number JANS1N6113AUS JANTX1N6113A JANTX1N6113AUS JANTXV1N6113A JANTXV1N6113AUS TGL41-18A P5KE16 P5KE16A SA12C SA130 SA5.0C SA51A SMAJ16 SMAJ16A TGL41-20 1N6114 1N6114US JAN1N6114 JAN1N6114US JANTX1N6114 JANTX1N6114US

168nH

Abstract: w012 toko filter 450
Contextual Info: Surface Acoustic Wave Filter 10/24/97 TOKO No: SA130ZA-004 Preliminary 1. Overall Dimensions 4.8 0.8 3 5 6 2 7 SA130 ZA004 W012 2.54 4 1.0 1 10 Unit: mm Input : 10 Output : 5 Ground : 4,9 9.1 1.8 max Tolerance: ±0.2 8 9 2.54 2. Electrical Characteristics

Contextual Info: SA5.0 thru SA170CA Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle :

Contextual Info: SA5.0A thru SA170CA www.vishay.com Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 500 W peak pulse power capability with a 10/1000 s waveform, repetitive rate duty

48C20

Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
Contextual Info: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

GL032A

Abstract: S71GL032A S71GL032
Contextual Info: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this

SA11

Abstract: SA11A SA12 SA12A SA13 SA13A SA10 SA10A
Contextual Info: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS SA SERIES REVERSE VOLTAGE - 5.0 to 170 Volts POWER DISSIPATION - 500 WATTS DO-15 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

Contextual Info: S29NS-R MirrorBit Flash Family S29NS01GR, S29NS512R, S29NS256R, S29NS128R 1024/512/256/128 Mb 64/32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory S29NS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Retired Product)

740-0007

Abstract: EN29GL064 6A000
Contextual Info: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and

BI-DIRECTIONAL TVS 3 watt

Abstract: lt 715 s170 D015 SA10 SA10A SA11 SA11A SA12 SA12A
Contextual Info: T ra n s ie n t V o lta ge S u p p re s s io n TV S D io d e s S A5 . Û r/es C3Y30M Control overpower 0.76 Smtslblei Prolection MAXIMUM RATINGS When no problems exist, Oydorn TVS • Peak pulse power (Ppk): Diodes are totally invisible to the circuits they‘re protecting. But when potentially

SA-275

Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
Contextual Info: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document

M420000000

Abstract: FSB073 3FE00
Contextual Info: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector

71WS256NC0BAIAU

Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics

tc 368 94v-0 board

Abstract: SA170A sa33 Datasheet J-STD-020A SA10 SA11 SA12 at 627
Contextual Info: SA5V0A - SA170A 500W TRANSIENT VOLTAGE SUPPRESSOR Features • · · · · · · Constructed with Glass Passivated Die Excellent Clamping Capability 500W Peak Pulse Power Dissipation Fast Response Time 100% Tested at Rated Peak Pulse Power Voltage Range 5.0 - 170 Volts

BYD74G

Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

2x062h

Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1