S8221 Search Results

Contextual Info: polyfet rf devices S8221 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

G8337

Abstract: S8221 S8335 S-8335
Contextual Info: PHOTODIODE Si/GaAs PIN photodiode with preamp S8335/S8221/G8337 series Receptacle type, 0.65/0.8 µm, 500 Mbps/1.25 • 2.1 Gbps S8335/S8221/G8337 series are high-speed receivers specifically developed for 0.65/0.8 µm band optical fiber communications. These devices

TB111B

Abstract: 111B SQ721 Polyfet RF Devices c1510 30-88MHz 850mu 10NF 20AWG 47PF
Contextual Info: Polyfet RF Devices TB111B S8221->SQ721 Gain/Efficiency vs Freq; Vds=12.5Vdc Idq=.6A 80 50 70 40 60 30 Eff in % Gain in dB Efficiency Gain 50 Pout fixed at 10W 20 40 10 30 20 10 20 30 40 50 Freq in MHz Page 1 60 70 80 90 100 Polyfet RF Devices TB111B: Pout/Gain vs Pin, Freq = 30MHz; Vds = 12.5Vdc, Idq =.6A

S8221

Abstract: VDMOS
Contextual Info: polyfet rf devices S8221 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

S8221

Abstract: G8337
Contextual Info: PHOTODIODE Si/GaAs PIN photodiode with preamp S8221/G8337 series Receptacle type, 0.8 µm, 1.25, 2.1 Gbps S8221/G8337 series are high-speed receivers specifically developed for 0.8 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity Si or GaAs PIN photodiode integrated with a high-speed preamp and integrated in a receptacle module.

handbook of shipboard electromagnetic shielding practices

Abstract: ASTM-A-753 MIL-B-857 MIL-STD-463 s41 hall effect sensor s41 hall effect sensor s41 s41 hall effect sensor S9300-AW-EDG-010 Bendix synchro control transformer MIL-C-915
Contextual Info: S9407-AB-HBK-010 Revision 2 HANDBOOK OF SHIPBOARD ELECTROMAGNETIC SHIELDING PRACTICES This document supersedes S9407-AB-HBK-010, Revision 1 date published 30 September 1989 APPROVED FOR PUBLIC RELEASE; DISTRIBUTION IS UNLIMITED Published by Direction of Commander, Naval Sea Systems Command

Contextual Info: C S C S in g le R eg u lato rs | M ax P/N Deaeri p li on O utput Output lir a pout Iol Current V oltage 1.8 V Logic Functions E N A B L e | r E SE tJ Watchdog C S -403 5V, 5 00m A R eg u lato r w ith R E S E T 5V ±57,. 500m A X C S-8101 M icro p o w er 5V, 100m A L D O R e g u la to r

Contextual Info: Rev.1.0_00 BATTERY PROTECTION IC FOR 1-CELL PACK S-8221 Series The S-8221 Series are protection ICs for single-cell lithium-ion / lithium-polymer rechargeable batteries and include highaccuracy voltage detectors and delay circuits. These ICs are suitable for protecting single-cell rechargeable

MDM 6600

Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
Contextual Info: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1

MGCF21

Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount

Contextual Info: Micropower 5V, 100mA Low Dropout Linear Regulator D escription T h u CS-H221 is a p r e c i s i o n 5V, 10 0 m A m i c r o p o w e r v o l t a g e r e g u l a ­ t o r w i t h v e r y lo w q u i e s c e n t c u r r e n t hOpA tv pit a 1 .il lOOpA lo ad . T h e

rf push pull mosfet power amplifier

Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
Contextual Info: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30