SQ721 Search Results

Contextual Info: polyfet rf devices SQ721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

SQ721

Abstract: VDMOS
Contextual Info: polyfet rf devices SQ721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

TB111B

Abstract: 111B SQ721 Polyfet RF Devices c1510 30-88MHz 850mu 10NF 20AWG 47PF
Contextual Info: Polyfet RF Devices TB111B S8221->SQ721 Gain/Efficiency vs Freq; Vds=12.5Vdc Idq=.6A 80 50 70 40 60 30 Eff in % Gain in dB Efficiency Gain 50 Pout fixed at 10W 20 40 10 30 20 10 20 30 40 50 Freq in MHz Page 1 60 70 80 90 100 Polyfet RF Devices TB111B: Pout/Gain vs Pin, Freq = 30MHz; Vds = 12.5Vdc, Idq =.6A

Contextual Info: polyfet rf devices SQ721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

SQ721

Contextual Info: polyfet rf devices SQ721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

SQ721

Contextual Info: polyfet rf devices SQ721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

Contextual Info: TB111-A Pout/Gain vs Pin Freq=110MHz;Vds=12.5Vdc Idq=.6A 35.0 14 12 10 30.0 Pout 8 Efficiency @10W = 60% 6 25.0 4 Gain 2 20.0 0.01 0.02 0.03 0.04 0.05 0.06 Pin in Watts 0.07 0.08 0.09 0.1 TB111-A Pout/Gain vs Pin Freq=88MHz;Vds=12.5Vdc Idq=.6A 16 31.0 29.0

MGCF21

Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount

rf push pull mosfet power amplifier

Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
Contextual Info: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30