S4164 Search Results

A11t

Contextual Info: S416400, S416400P, TMS417400, TMS417400P TMS426400, TMS426400P, TMS427400, TMS427400P 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS SMKS881 A - MAY 1995 - REVISEDJUNE1995 Electrical characteristics for TM S416400/P and TM S417400/P is Production Data. Electrical

417400

Abstract: 77261 T 2109 TMS416400 TMS416400P TMS417400 TMS417400P TMS426400 TMS426400P TMS427400
Contextual Info: S416400, S416400P, TMS417400, TMS417400P TMS426400, TMS426400P, TMS427400, TMS427400P 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS SM KS881A - MAY 1 9 9 5 - REVISEDJUNE1995 Electrical characteristics for TM S416400/P and TM S417400/P is Production Data. Electrical

TMS4164-15

Abstract: TMS4164 tms4500 TMS4164A TMS4500A TMS4164-20 4164 dram 4164-15 RAM 4164 4164 ram
Contextual Info: TM S4164 65,536-BIT DYNAMIC RANDOM-ACCESS MEMORY M A Y 1985 —REVISED NOVEMBER 1985 This D ata S heet Is Applicable to A ll T M S 4 164 s Symbolized with Code A " as Described on Page 4 -5 7. N PACKAGE TOP VIEW NCC 1 U DC 2 wC 3 RASH 4 A0C 5 A 2C 6 AlC 7

TMS4161

Contextual Info: TMS4161 65,536 BIT MULTIPORT VIDEO RAM JU LY 1 9 8 3 —REVISED NOVEMBER 1 9 8 5 N PACKAGE Dual Accessibility — One Port Sequential Access, One Port Random Access TOP VIEW Four Cascaded 64-B it Serial Shift Registers for Sequential Access Applications

4164 dynamic ram

Abstract: 4164 ram tlu 011 TM4164 RAM 4164 DYNAMIC RAM 65536 TEXAS
Contextual Info: TM4164FL8. TM4164FM8 65,536 BY 8-BIT DYNAMIC RAM MODULES NOVEMBER 1983 - . L S IN G L E-IN -U N E P A C K A G E * . . M SIN GLE-IN -LINE PACKAGE TM 4164FL8 . TM 4164FM 8 6 5 .5 3 6 X 8 Organization Single 5 -V Supply 1 0 % Tolerance (TO P V IE W ) Long Refresh Period . . . 4 ms (2 5 6 Cycles)

Contextual Info: Si7960DP New Product Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.021 @ VGS = 10 V 9.7 0.025 @ VGS = 4.5 V 8.9 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr D Dual MOSFET for Space Savings

4164-2

Abstract: 73041 SI7107DN
Contextual Info: Si7107DN New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.0108 @ VGS = -4.5 V -15.3 0.015 @ VGS = -2.5 V -13.0 0.020 @ VGS = -1.8 V -11.2 -20 D TrenchFETr Power MOSFETS: 1.8-V Rated D Ultra Low On-Resistance for Increased Battery Life

Contextual Info: Si7114DN New Product Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0075 @ VGS = 10 V 18.3 0.010 @ VGS = 4.5 V 15.9 D TrenchFETr Gen II Power MOSFET D New Low Thermal Resistance PowerPAKr

77261

Abstract: trc 20020
Contextual Info: S416400A, TMS417400A 4194304 BY 4-BTT DYNAMIC RANDOM-ACCESS MEMORIES _ SM KSa89B- AUGUST 1996 - REVISED OCTOBER 1997 This data sheet is applicable to all TMS41x400As symbolized by Revision “B”, Revision “E” and subsequent revisions as

NTC 20D-20

Abstract: 7400P s427400 IC TTL 7400 input leakage current 6400P/P1L-6400/6460/6480P
Contextual Info: TMS41 6400, TMS41 6400P, TMS41 7400, TMS41 7400P T M S 426400, TMS426400P, T M S 427400 , T M S 4 2 7 4 0 0 P 41 9 4 3 0 4 -W Q R D B Y 4-BIT H IG H -S P E E D D R A M S SMKS881B - MAY 1995 - REVISED AUGUST 1995 Electrical characteristics for T M S 416400/P and

Si4992EY-T1-E3

Abstract: Si4992EY
Contextual Info: Si4992EY New Product Vishay Siliconix Dual N-Channel 75-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D High-Efficiency PWM Optimized PRODUCT SUMMARY VDS (V) 75 rDS(on) (Ω) ID (A) 0.048 @ VGS = 10 V 4.8 0.062 @ VGS = 4.5 V

Contextual Info: Si5908DC New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.040 @ VGS = 4.5 V 5.9 0.045 @ VGS = 2.5 V 5.6 0.052 @ VGS = 1.8 V 5.2 D TrenchFETr Power MOSFETS D Ultra Low rDS(on) and Excellent Power

Contextual Info: S416400 4194 304-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY REV A — SMKS640 — JANUARY 1991 DZ Package T o p V ie w < o o Single 5-V Power Supply (10% Tolerance) Performance Ranges: ACCESS ACCESS ACCESS READ TIME TIME TIME OR WRITE tRAC *CAC *AA CYCLE

Si7960DP

Abstract: SI7960DP-T1-E3
Contextual Info: Si7960DP New Product Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.021 @ VGS = 10 V 9.7 0.025 @ VGS = 4.5 V 8.9 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr D Dual MOSFET for Space Savings

Contextual Info: Si7422DN New Product Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.0061 @ VGS = 10 V 20.3 0.0077 @ VGS = 4.5 V 18.1 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile

"MARKING CODE CC"

Contextual Info: Si5908DC New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.040 @ VGS = 4.5 V 5.9 0.045 @ VGS = 2.5 V 5.6 0.052 @ VGS = 1.8 V 5.2 D TrenchFETr Power MOSFETS D Ultra Low rDS(on) and Excellent Power

54164

Contextual Info: 0> a National Semiconductor 54164/DM74164 8-Bit Serial In/Parallel Out Shift Registers General Description Features These 8-bit shift registers feature gated serial inputs and an asynchronous clear. A low logic level at either serial input inhibits entry of the new data, and resets the first flip-flop to

4164 ram

Abstract: 4164 dynamic ram RAM 4164 4Q709 4164 4164 (RAM)
Contextual Info: TEXAS IN STR { A S I C / M E M O R Y J- 7 7 Ö961725 TEXAS INSTR CASIC/MEMORY D E| 8^1755 D 04 G 7D t , 77C 4 0 7 0 6 3 D TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1983 - REVISED NOVEMBER 1986 6 5 ,5 3 6 X 9 Organization TM 4164EL9 . . . L SINGLE-IN-UNE PACKAGE*

tms4164

Abstract: 4164-20 TMS4164 65,536 irf 536
Contextual Info: S4164 65,536 BIT DYNAMIC RANDOM-ACCESS MEMORY MAV 1985 —REVISED NOVEMBER 1985 This D a ta S hee t Is A p p lic a b le to A ll T M S 4 1 6 4 s S ym b o lize d w ith Code " A " as D e scrib e d on Page 4 -5 7. 6 5 .5 3 6 X 1 Organization • Single 5-V Supply 10% Tolerance

Si7806ADN

Abstract: 41645
Contextual Info: Si7806ADN New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.011 @ VGS = 10 V 14 0.016 @ VGS = 4.5 V 12 D TrenchFETr Power MOSFET D PWM Optimized D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile

ic vertical la 78141

Abstract: IC LA 78141 schematic LA 78141 tv application circuit 4116 ram tda 78141 TMS4500 LA 78141 VERTICAL 21L14 mitsubishi elevator circuit diagram 4464 64k dram
Contextual Info: MOS Memory Data Book 1984 Commercial and Military Specifications ♦ Texas In str u m en ts Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide Glossary/Timing Conventions/Data Sheet Structure Dynamic RAM and Memory Support Devices

SI7960DP-T1-E3

Abstract: Si7960DP
Contextual Info: Si7960DP New Product Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.021 @ VGS = 10 V 9.7 0.025 @ VGS = 4.5 V 8.9 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr D Dual MOSFET for Space Savings

Contextual Info: Si4992EY New Product Vishay Siliconix Dual N-Channel 75-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D High-Efficiency PWM Optimized PRODUCT SUMMARY VDS (V) 75 rDS(on) (Ω) ID (A) 0.048 @ VGS = 10 V 4.8 0.062 @ VGS = 4.5 V

ChipFET

Abstract: si5908
Contextual Info: Si5908DC New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.040 @ VGS = 4.5 V 5.9 0.045 @ VGS = 2.5 V 5.6 0.052 @ VGS = 1.8 V 5.2 D TrenchFETr Power MOSFETS D Ultra Low rDS(on) and Excellent Power