TMS426400 Search Results

417400

Abstract: TMS416400 TMS416400P TMS417400 TMS417400P TMS426400 TMS426400P TMS427400 TMS427400P
Contextual Info: TMS416400, TMS416400P, TMS417400, TMS417400P TMS426400, TMS426400P, TMS427400, TMS427400P 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS SMKS881B – MAY 1995 – REVISED AUGUST 1995 D D D D D D D D D D D Electrical characteristics for TMS416400/P and TMS417400/P is Production Data. Electrical

NTC 20D-20

Abstract: 7400P s427400 IC TTL 7400 input leakage current 6400P/P1L-6400/6460/6480P
Contextual Info: TMS41 6400, TMS41 6400P, TMS41 7400, TMS41 7400P T M S 426400, TMS426400P, T M S 427400 , T M S 4 2 7 4 0 0 P 41 9 4 3 0 4 -W Q R D B Y 4-BIT H IG H -S P E E D D R A M S SMKS881B - MAY 1995 - REVISED AUGUST 1995 Electrical characteristics for T M S 416400/P and

417400

Abstract: PDSO-G24 Package TMS416400 TMS416400P TMS417400 TMS417400P TMS426400 TMS426400P TMS427400 TMS427400P
Contextual Info: TMS416400, TMS416400P, TMS417400, TMS417400P TMS426400, TMS426400P, TMS427400, TMS427400P 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS SMKS881B – MAY 1995 – REVISED AUGUST 1995 D D D D D D D D D D D Electrical characteristics for TMS416400/P and TMS417400/P is Production Data. Electrical

Contextual Info: TMS426400, TMS426400P 4194 304-WORD BY 4-BIT LOW-VOLTAGE DYNAMIC RANDOM-ACCESS MEMORIES SMKS264-JANUARY 1993 DJ PACKAGEt TOP VIEW Single 3.3-V Power Supply (± 0.3 V Tolerance) V CC [ DQ1 [ Low Power Dissipation (TMS426400P) - 100 pA CMOS Standby - 100 pA Self-Refresh

A11t

Contextual Info: TMS416400, TMS416400P, TMS417400, TMS417400P TMS426400, TMS426400P, TMS427400, TMS427400P 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS SMKS881 A - MAY 1995 - REVISEDJUNE1995 Electrical characteristics for TM S416400/P and TM S417400/P is Production Data. Electrical

417400

Abstract: 77261 T 2109 TMS416400 TMS416400P TMS417400 TMS417400P TMS426400 TMS426400P TMS427400
Contextual Info: TMS416400, TMS416400P, TMS417400, TMS417400P TMS426400, TMS426400P, TMS427400, TMS427400P 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS SM KS881A - MAY 1 9 9 5 - REVISEDJUNE1995 Electrical characteristics for TM S416400/P and TM S417400/P is Production Data. Electrical

VG264265B

Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Contextual Info: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D

7400A

Abstract: S889A
Contextual Info: TMS416400A, TMS417400A T M S 4 2 6 4 0 0 A , TMS 4 26 4 00 A P, T M S 4 2 7 4 0 0 A , T M S 4 2 7 4 0 0 A P 4 1 9 4 3 Q 4- W O RD BY 4-BI T H I G H - S P E E D D R A M S SMKS889A-AUGUST 1 9 9 6 -REVISED FEBRUARY 1997 This data sheet is applicable to all TMS41x400As