S29F002 Search Results

Contextual Info: H ig h p e r fo r m a n c e 2 5 6 IÍX 8 SV C M O S F la s h E E P R O M A S29F002 h A 2 5 6 K X 8 CM O S Flash E E PR O M Prelim inary information Features • O rgan ization: 2 5 6 K x 8 • L o w p o w er co n su m p tio n - 4 0 mA m axim um read current

intel 29F

Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568
Contextual Info: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C AS7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256

A1317

Abstract: AS29 120PI
Contextual Info: Preliminary information •■ S29F002 1 5V 256KX8 CMOS Flash EE PROM Features • O rg a n iz a tio n : 2 5 6 K x 8 • S e c to r a rc h ite c tu re - O n e 16K; tw o 8 K; o n e 32K ; a n d th r e e 6 4K b y te se c to rs - B o o t c o d e s e c to r a r c h ite c tu re — T to p o r B (b o tto m )

ITT 435

Abstract: .5555b 29F002 18-SO AS29 a37al 1L400 29F002-S5 itt435 120PI
Contextual Info: « H ig h p e rfo rm a n ce 256K X 8 5 V CMOS Flash EEPROM S29F002 A 2J>6Kx8 CMOS Flash EEPROM Prelim inary inform ation Features • O r g a n iz a tio n : 2 5 6 K x 8 • S e c to r a r c h ite c tu r e - O n e 16K; tw o 8K; o n e 32K ; a n d th re e 64K b y te secto rs

ym 238

Abstract: hy 214 29F002
Contextual Info: H ig h P e rfo rm a n ce « 256K X 8 S29F002 II 5V CMOS Flash EEPROM 2 M egabit 5V CMOS Flash FEPROM Preliminary information Features • O r g a n iz a tio n : 2 5 6 K x 8 • L o w p o w e r c o n s u m p tio n • S e c to r a r c h ite c tu r e - 35 m A m a x im u m read current

Contextual Info: Preliminary information •■ A S 2 9 F0 0 2 A 5 V 2 5 6 K X 8 C M O S Flash EE PROM Features • Organization: 256Kx8 • Sector architecture - One 16K; two 8K; one 32K; and three 64Kbyte sectors - Boot code sector architecture—T top or B (bottom) - Erase any combination of sectors or full chip

Contextual Info: Hi'^li P i'rfo rm a iK c •■ A S 2 lM;0 2 A 2S6K X 8 SV ( ’MC)S l lasli lil F R O M 2 S6 K x 8 C M O S llii.sli HI.PROM Preliminary information Features • Organization: 2S6Kx8 • Sector architecture • L o w p o w e r c o n s u m p tio n - 4 0 m A m a x im u m re a d c u rre n t

Contextual Info: H ig h P e rfo rm a n ce •■ 2S6KX8 II S29F002 5V CMOS Flash EEPROM 2 M egabit 5V CMOS Flash EEPROM Preliminary information Features • O r g a n iz a t io n : 2 5 6 K x 8 • L o w p o w e r c o n s u m p tio n • S e c to r a r c h ite c tu r e - 3 5 m A m a x im u m read current

Contextual Info: A High Perform,u h e I S6k X K S V C M O S I l.isli M P R O M VS 21 1(1 Z 1S6Kx8 CMOS Hush M PNOM Preliminary information Features • O r g a n iz a t i o n : 2 5 6 K X 8 1 L o w r p o w e r c o n s u m p t io n • S e c to r a r c h it e c t u r e - 4 0 m A m a x im u m read cu rren t

29F002T90

Contextual Info: Prelim inary inform ation Features • Organization: 256KX8 • Sector architecture • Low power consumption - O ne 16K; tw o 8K; o n e 32K; a n d th re e 64K b y te sectors - B oot co d e sector arch itectu re— T to p o r B (b o tto m ) - Erase any c o m b in a tio n o f sectors o r full ch ip

S555B

Abstract: .5555b 29F002B FLASH MEMORY 29F 29F002T S29F002T-90PC S-555B
Contextual Info: Preliminary information Features • O rganization: 2 5 6 K x 8 • Sector architecture - O ne 16K; tw o 8K; one 32K; an d three 64K byte sectors - Boot code sector architecture— T top o r B (bottom ) - Erase any com bination o f sectors o r full chip