S25VB
Abstract: S25VB60
Contextual Info: SHINDENGEN General Purpose Rectifiers Square In-line Package OUTLINE DIMENSIONS S25VB60 Case : S25VB Unit : mm 600V 25A RATINGS @Absolute Maximum Ratings Item Storage Temperature Operating Junction Temperature Maximum Reverse Voltage Average Rectified Forward Current
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S25VB60
Abstract: BR50 S15VB20 S15VB60 S25VB20
Contextual Info: S25VB20 ~ S25VB60 SILICON BRIDGE RECTIFIERS BR50 PRV : 200 ~ 600 Volts Io : 25 Amperes 0.728 18.50 0.688(17.40) FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board
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s25vb20s25vb60ul94v-obr50+2s15vb20s15vb60
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S25VB100
Abstract: rectifier S25VB60 S25VB60 S25VB80
Contextual Info: LESHAN RADIO COMPANY, LTD. 25A BRIDGE RECTIFIERS 25A 25A BRIDGE RECTIFIERS Absolute MAX rating Description Symbols Storage Temperature T STG Ratings Conditions –40 ~ +150 150 TJ Operating Junction Temperature Unit °C °C V RM MAX reverse Voltage S25VB60
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si5sc4m
Abstract: S30S4A SIOVB20 D5FB20 S60S4 D20VT60 s30s3a S30S04M SIOV-B20 S60S3
Contextual Info: SfiiÜTt: SHINDENGEN SEMICONDUCTOR ARISTO-CRAFT bb D E J 0^53515 DOPPI? 1 [SI 14 ’I»-«* &• i5 SI0VBI0 SI0VB2Q SIOVB40 SI0VB60 SI5VBI0 SI5VB20 SI5VB40 ,SI5VB60 . S25VBI0 S25VB20 S25VB40 S25VB60 D5FBI0 D5FB20 ,D5FB40 D5FB60 lo A 10 15 25 5 ;.ÌR (max)t
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siovb20siovb40si0vb60si5vb20+15si5vb40si5vb60s25vbi0s25vb20s25vb40s25vb60si5sc4ms30s4ad5fb20s60s4d20vt60s30s3as30s04msiov-b20s60s3
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1N 2002 diode
Abstract: S25VB S25VB60 M/1N 2002 diode
Contextual Info: SHINDENGEN General Purpose Rectifiers Square In-line Package OUTLINE DIMENSIONS S25VB60 Case : S25VB Unit : mm 600V 25A RATINGS @Absolute Maximum Ratings Item Storage Temperature Operating Junction Temperature Maximum Reverse Voltage Average Rectified Forward Current
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s25vb60s25vb1mst10mss25vbx+21n 2002 diodem/1n 2002 diode
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S30SC3M
Abstract: D5FB20 si5sc4m s30sc4m S60S4 D20VT60 SI5S03M S30S4A SIOV-B20 SIOVB20
Contextual Info: HE-F .-7 'fìLTsZy'j' • s • i5 SI0VBI0 SIOVB20 SIOVB40 SI0VB60 SI5VBI0 SI5VB20 SI5VB40 ,SI5VB60 . S25VBI0 S25VB20 S25VB40 S25VB60 D5FBI.0 D5FB20 ,D5FB40 D5FB60 lo A 10 15 25 5 SEMICONDUCTOR VRM ;• • I f s m " V F (m $ ). v.lR(max,)i - ( V ) .:1¿ i m
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siovb20si0vb60si5vb20si5vb40+14s15vb60s25vbi0s25vb20s25vb40s25vb60d5fb20s30sc3msi5sc4ms30sc4ms60s4d20vt60si5s03ms30s4asiov-b20
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rectifier S25VB60
Abstract: bridge diode s25vb60
Contextual Info: S25VB60 SILICON BRIDGE RECTIFIER BR50 PRV : 600 Volts Io : 25 Amperes 0.728 18.50 0.688(17.40) FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board
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s25vb60ul94v-orectifier s25vb60bridge diode s25vb60 |
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7555-T
Abstract: M1FM3
Contextual Info: Al t hough we ar e cons t ant l ymak i ng ev er yef f or tt oi mpr ov et he qual i t yand r el i abi l i t yofourpr oduct s ,t her enev er t hel es sr emai nsacer t ai npr obabi l i t yt hatt he s emi conduct orpr oduct smayoccas i onal l yf ai lormal f unct
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S25VB100
Abstract: S25VB10 rectifier S25VB100 rectifier S25VB60 s25vb40 S25VB60 S25VB80 S25VB20
Contextual Info: S25VB10 Thru S25VB100 High Current Glass Passivated Molding Single-Phase Bridge Rectifier Reverse Voltage 100 to 1000V Forward Current 25.0 A FEATURES z Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 z High current capacity with small
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s25vb10s25vb100s25vb20s25vb40+5s25vb60s25vb8025vb10rectifier s25vb100rectifier s25vb60
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2x062h
Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1
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zmm22zmm24zmm27zmm43+11zmm472x062hgk1051ss216gk104smd transistors w06d20sb80smd marking 5asd25sb80lrb706f-40t1g2x062
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S25VB
Contextual Info: S25VB10 Thru S25VB100 High Current Glass Passivated Molding Single-Phase Bridge Rectifier Reverse Voltage 100 to 1000V Forward Current 25.0 A FEATURES z Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 z High current capacity with small
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Solitron J775-2
Abstract: BT196 SS14 TOSHIBA 1n5822 TOSHIBA SS550 BT127 SE140 NSR8140S NBS25-400 1N4007 toshiba
Contextual Info: CROSS REFERENCE INDUSTRIAL R u t No. 10D05 iœ i îœ i 10D2 1 302 im 1004 10D4 10D6 10 6 IO » im 11DQ03 11DQ04 11DQ05 11DQ06 15B4B41 15D4B41 15G4B41 15J4B41 1B4B42 im a im o naco in n o 1G4B42 lHi 117 1BB 1J4B42 1*1217 1*12171 1K1217B 1N1218 1K1218A 1*12188
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10d05rl151g1n4934rl152g+151n4935rl153grl154g1n4936rl155gsolitron j775-2bt196ss14 toshiba1n5822 toshibass550bt127se140nsr8140snbs25-4001n4007 toshiba
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J514
Contextual Info: SQ I PS! 7 'J Bridge Diode Square In-line Package • fl-fiN -J Ä H OUTLINE DIM ENSIO NS S25VB 600V 25A 45 £1 «a± *nîEowcB, memm*zmm<rc-£u RATINGS Absolute Maximum Ratings (itSw&v'i&'û- T c = 25°C) a 1 Item fiM R B K Storage Temperature ® # 6 R IK
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s25vb40
Abstract: SHINDENGEN DIODE
Contextual Info: S Q .I.P .S i Square In-line Package Bridge Diode S H I N D E N GE N ELECTRIC SME MFG D • 8211387 'T-Z-3> ' ^ 7 DDDDS2S ■ STfl B I S H E J O U T L IN E D IM E N S IO N S S25VBD 600V ■ Æ fê it 25A R A T IN G S Absolute Maximum Ratings m- m @ Item Symbol
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s25vbds25vbi0s25vb20s25vb40+3s25vb60-23-jshindengen diode
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s25vb 40 Bridge Diode
Contextual Info: SQ I P Bridge Diode Square In-line Package OUTLINE S25VB 11 S25VB ＋ ① ② 32 IR ④ Feature • • • • 23 32 High-Reliability Heat Resistance Low IR Faston terminal 60 16 800V 25A • • • • Unit : mm Weight : 21g typ. Package S25VB ロット記号（例）
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5ke100a5ke100ca5ke10a5ke10ca+165ke110a5ke110ca5ke11a5ke11ca5ke120a5ke120cassp35n03bc417ksh200 equivalent2n5457 equivalentss8050 equivalent1n34 equivalentfqp50n06 equivalentbd139 equivalent2n5458 equivalent2n3563 equivalent
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S25VB
Abstract: S25VB80 s25vb 40 Bridge Diode S25VB20 S25VB60 bridge diode s25vb60 diode bridge 25A
Contextual Info: SQ I P 型 Bridge Diode Square In-line Package •外観図 OUTLINE S25VB□ Unit : mm Weight : 21g（typ.） Package：S25VB 800V 25A 23 32 11 ① 特長 ② 60 16 32 ④ ロット記号（例） Date code S25VB ＋ • 耐湿性に優れ高信頼性 • 高耐熱性
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SIVB20
Abstract: KIV6 SIWB20 SI0VB20 SIWB60 LT2150 sivb*60 SY242R5 S4VB40 si2kc20
Contextual Info: C A T .N O .F 0 0 7 SHINDENGEN PRODUCTS ’82 Semiconductors D.C.Switching Pow er Suppliel Solenoids & Ro tary Solenoid Sequence P ro c e sso rs tafm scSfM fcsrfrift — £ / jJ jid e s ig & n _ F lp c itn lc . J T la n u fn n tu n in g ._ i ffiiSsc , Sri
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byg300/0ibyg310byg310/02byg430/0i+12byg800/01cyg500/01sivb20kiv6siwb20si0vb20siwb60lt2150sivb*60sy242r5s4vb40si2kc20
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KBP307
Abstract: D2UB80
Contextual Info: QQQX2.E347214 - Electrically Isolated Semiconductor Devices - Component Home Quick Guide Contact Us UL.com QQQX2.E347214 Electrically Isolated Semiconductor Devices - Component Page Bottom Electrically Isolated Semiconductor Devices - Component See General Information for Electrically Isolated Semiconductor Devices - Component
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S25VB100
Abstract: rectifier S25VB60 S25VB40 rectifier S25VB100 S25VB10 S25VB80 bridge diode s25vb60 BRIDGE-RECTIFIER small package S25V S25VB20
Contextual Info: LESHAN RADIO COMPANY, LTD. S25VB10 Thru S25VB100 High Current Glass Passivated Single-Phase Bridge Rectifier FEATURES Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 High current capacity with small package Glass passivated chip junctions
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s25vb10s25vb100s25vb20s25vb40+7s25vb60s25vb80rectifier s25vb60rectifier s25vb100bridge diode s25vb60bridge-rectifier small packages25v
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bridge rectifier
Abstract: KBU2506
Contextual Info: BRIDGE RECTIFIER TYPE NO. Max.Reverse Voltage Max.Aver. Rect.Current Peak Fwd. Surge Current Max.Fwd. Voltage @25℃ & Rated Io VRM V Io(A) IFSM(A) Rated Io(A) VF(V) ABS2 200 0.8/1.0 30 0.4 ABS4 400 0.8/1.0 30 0.4 ABS6 600 0.8/1.0 30 ABS8 800 0.8/1.0 ABS10
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abs10skbpc3508skbpc3510skbpc3512+4skbpc3514skbpc3516bridge rectifierkbu2506
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S25VB
Abstract: S25VB60 S25VB80
Contextual Info: SQ I P 型 Bridge Diode Square In-line Package •外観図 OUTLINE S25VB□ Unit : mm Weight : 21g （typ.） Package：S25VB 800V 25A 23 32 60 16 • 耐湿性に優れ高信頼性 • 高耐熱性 • 低 IR • ファストン端子 32 ④ Feature •
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S25VB100
Abstract: S25VB100W S25VB60W S25VB80 S25VB10
Contextual Info: LESHAN RADIO COMPANY, LTD. High Current Glass Passivated Single-Phase Bridge Rectifier S25VB10W Thru S25VB100W FEATURES ． Plastic Package has Underwriters Laboratory ．Flammability Classification 94V-0 ． High current capacity with small package ．Glass passivated chip junctions
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S25VB
Abstract: s25vb 40 Bridge Diode
Contextual Info: SQ I P型 ブリッジダイオード Square In-line Package Bridge Diode •外形寸法図 OUTLINE DIMENSIONS Unit : mm Weight：21g（typ.） Package：S25VB S25VB□ 32MAX 16.2 9 600V 25A 23MAX 11 ① ④ 16 クラス表示（例） Class 品名 Type No.
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