D5FB40 Search Results

D3SB60 47

Abstract: D1CA20 dica20 D3SB60 D3SB60Z D5FB20 CTU-32R CTU-32S CTU-34R CTU-36R
Contextual Info: - 117À Ä B £ ít « D1JA20 D1 J A 6 0 D1JAK2Q D1 J S 2 0 D2 S B 2 0 D2 S B 6 0 D2SB60L D 2 SBA20 D2SBA60 D3 S B 2 0 D3 S B 6 0 D3SB60Z D 3 SBA20 D 3 SBA60 D 4BB20 D 4BB40 D4SB60L D 4SB80 D4SBS6 D4SC6M D5FB20 D5FB40Z D5FB60 D5KC2Q D5KC20H V (V) (V) (V)

si5sc4m

Abstract: S30S4A SIOVB20 D5FB20 S60S4 D20VT60 s30s3a S30S04M SIOV-B20 S60S3
Contextual Info: SfiiÜTt: SHINDENGEN SEMICONDUCTOR ARISTO-CRAFT bb D E J 0^53515 DOPPI? 1 [SI 14 ’I»-«* &• i5 SI0VBI0 SI0VB2Q SIOVB40 SI0VB60 SI5VBI0 SI5VB20 SI5VB40 ,SI5VB60 . S25VBI0 S25VB20 S25VB40 S25VB60 D5FBI0 D5FB20 ,D5FB40 D5FB60 lo A 10 15 25 5 ;.ÌR (max)t

D1CA20

Abstract: D4SB60L D5FB20 CTU-31S CTU-32S CTU-34R CTU-34S CTU-36R CTU-36S D1CA20R
Contextual Info: - À Ä B £ ít « D1JA20 D1 J A 6 0 D1JAK2Q D1 J S 2 0 D2 S B 2 0 D5FB20 D5FB40Z D5FB60 D5KC2Q D5KC20H A (°C) (A) rc) (V) IF (A) T (°C) ( p. A) V r (V) T (°C) ite a i- y (t')- y îf & T t '/ M v r ( 7 / - K 2^=fï'/9-hi‘ (T /-y W -V 2 a/-y î f & T t 'Jh h '} ' (1i'l-y

S30SC3M

Abstract: D5FB20 si5sc4m s30sc4m S60S4 D20VT60 SI5S03M S30S4A SIOV-B20 SIOVB20
Contextual Info: HE-F .-7 'fìLTsZy'j' • s • i5 SI0VBI0 SIOVB20 SIOVB40 SI0VB60 SI5VBI0 SI5VB20 SI5VB40 ,SI5VB60 . S25VBI0 S25VB20 S25VB40 S25VB60 D5FBI.0 D5FB20 ,D5FB40 D5FB60 lo A 10 15 25 5 SEMICONDUCTOR VRM ;• • I f s m " V F (m $ ). v.lR(max,)i - ( V ) .:1¿ i m

Contextual Info: D5FB40Z Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)44’ V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.120 V(FM) Max.(V) Forward Voltage1.05 @I(FM) (A) (Test Condition)3.0 @Temp. (øC) (Test Condition)25’

Contextual Info: D5FB40 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current5.0 @Temp (øC) (Test Condition)30’ V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.200 V(FM) Max.(V) Forward Voltage1.05 @I(FM) (A) (Test Condition)2.5 @Temp. (øC) (Test Condition)25’

D5FB20

Abstract: D2SBA20 D3SBA60 D1CA20 D1CS20 D2SBA60 D4SB60L dica20 CTU-36R D1JA20
Contextual Info: - À Ä B £ ít « D1JA20 D1 J A 6 0 D1JAK2Q D1 J S 2 0 D2 S B 2 0 D5FB20 D5FB40Z D5FB60 D5KC2Q D5KC20H A (°C) (A) rc) (V) IF (A) T (°C) ( p. A) V r (V) T (°C) ite a i- y (t')- y îf & T t '/ M v r ( 7 / - K 2^=fï'/9-hi‘ (T /-y W -V 2 a/-y î f & T t 'Jh h '} ' (1i'l-y

D3SB60 47

Abstract: D1CA20 D2SBA60 D4SB60L D5FB20 D5KC20 D3SBA60 d4sb60 CTU-32R CTU-32S
Contextual Info: - 117 À Ä B CTU-31R CTU-31S CTU-32R CTU-32S CTU-34R CTU-34S CTU-36R CTU-36S D1CA20 D1CA20R D1CA40R D1CA60 D1CA60R D1CAK20 D1CAK20R D1CS20 D1CS20R D1CS60 D1CS60R D1CSK20 D1JA20 D1JA60 D1JAK2Q D1JS20 D2SB20 D2SB60 D2SB60L D2SBA20 D2SBA60 D3SB20 D3SB60 D3SB60Z

SIVB20

Abstract: KIV6 SIWB20 SI0VB20 SIWB60 LT2150 sivb*60 SY242R5 S4VB40 si2kc20
Contextual Info: C A T .N O .F 0 0 7 SHINDENGEN PRODUCTS ’82 Semiconductors D.C.Switching Pow er Suppliel Solenoids & Ro tary Solenoid Sequence P ro c e sso rs tafm scSfM fcsrfrift — £ / jJ jid e s ig & n _ F lp c itn lc . J T la n u fn n tu n in g ._ i ffiiSsc , Sri

3SBA60

Abstract: D20VT80 TH3J10 TK3L10Z TH3L20 TH3L10 TH3L10 Z D20VT60 a2430 10SC4M
Contextual Info: P a r t s N u m b e r Index Parts No. Page 2SA1598. . 36 2SA1599. . 36 2SA1600. . 36 2SA1601. . 36 2SA1679. . 36 2SA1795. . 21

D5FB10

Abstract: T30k40d S30SC3M S1WB10 D1NL40 DIODES S30SC4 d1nk40h T30G40 D5KC20RH T25U40
Contextual Info: D is c o n t in u e d P a r t s L is t The characteristics and performance of replacement parts are almost the same, but they are not identical in all respects. * : Under development as of January 1994 Parts No. D10LCA20 D10SC3M D10SC3MR D15LCA20 D1CAK20

D5FB20

Abstract: D5FB60 D1CA20 dica20 SM 8002 D2SBA60 d3sba20 CTU-31S D3SB60 47 CTU-34R
Contextual Info: - 117À Ä B CTU-31R CTU-31S CTU-32R CTU-32S CTU-34R CTU-34S CTU-36R CTU-36S D1CA20 D1CA20R D1CA40R D1CA60 D1CA60R D1CAK20 D1CAK20R D1CS20 D1CS20R D1CS60 D1CS60R D1CSK20 D1JA20 D1JA60 D1JAK2Q D1JS20 D2SB20 D2SB60 D2SB60L D2SBA20 D2SBA60 D3SB20 D3SB60 D3SB60Z