S25VB20 Search Results

S25VB60

Abstract: BR50 S15VB20 S15VB60 S25VB20
Contextual Info: S25VB20 ~ S25VB60 SILICON BRIDGE RECTIFIERS BR50 PRV : 200 ~ 600 Volts Io : 25 Amperes 0.728 18.50 0.688(17.40) FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board

S25VB

Abstract: 1N 2002 diode S25VB20
Contextual Info: SHINDENGEN General Purpose Rectifiers S25VB20 Square In-line Package OUTLINE DIMENSIONS Case : S25VB Unit : mm 200V 25A RATINGS œ@Absolute Maximum Ratings Item Storage Temperature Operating Junction Temperature Maximum Reverse Voltage Average Rectified Forward Current

si5sc4m

Abstract: S30S4A SIOVB20 D5FB20 S60S4 D20VT60 s30s3a S30S04M SIOV-B20 S60S3
Contextual Info: SfiiÜTt: SHINDENGEN SEMICONDUCTOR ARISTO-CRAFT bb D E J 0^53515 DOPPI? 1 [SI 14 ’I»-«* &• i5 SI0VBI0 SI0VB2Q SIOVB40 SI0VB60 SI5VBI0 SI5VB20 SI5VB40 ,SI5VB60 . S25VBI0 S25VB20 S25VB40 S25VB60 D5FBI0 D5FB20 ,D5FB40 D5FB60 lo A 10 15 25 5 ;.ÌR (max)t

S25VB20

Abstract: S25VB
Contextual Info: SHINDENGEN Square In-line Package Bridge Diode OUTLINE DIMENSIONS S25VB20 Case : S25VB Unit : mm 200V 25A RATINGS ● Absolute Maximum Ratings Item Symbol Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage IO 50Hz sine wave, R-load

S25VB

Abstract: S25VB20
Contextual Info: SHINDENGEN General Purpose Rectifiers Square In-line Package OUTLINE DIMENSIONS S25VB20 Case : S25VB Unit : mm 200V 25A RATINGS œ@Absolute Maximum Ratings Item Storage Temperature Operating Junction Temperature Maximum Reverse Voltage Average Rectified Forward Current

S30SC3M

Abstract: D5FB20 si5sc4m s30sc4m S60S4 D20VT60 SI5S03M S30S4A SIOV-B20 SIOVB20
Contextual Info: HE-F .-7 'fìLTsZy'j' • s • i5 SI0VBI0 SIOVB20 SIOVB40 SI0VB60 SI5VBI0 SI5VB20 SI5VB40 ,SI5VB60 . S25VBI0 S25VB20 S25VB40 S25VB60 D5FBI.0 D5FB20 ,D5FB40 D5FB60 lo A 10 15 25 5 SEMICONDUCTOR VRM ;• • I f s m " V F (m $ ). v.lR(max,)i - ( V ) .:1¿ i m

S25VB100

Abstract: S25VB10 rectifier S25VB100 rectifier S25VB60 s25vb40 S25VB60 S25VB80 S25VB20
Contextual Info: S25VB10 Thru S25VB100 High Current Glass Passivated Molding Single-Phase Bridge Rectifier Reverse Voltage 100 to 1000V Forward Current 25.0 A FEATURES z Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 z High current capacity with small

2x062h

Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1

S24LCA20

Abstract: L41C S20FND12 S48B s20lc20u S20LCA20 547B S20FND10 S20FNK02 S20FNK04
Contextual Info: - M m S20FND1Q S20FND12 S20FNK02 S20FNK04 S20FNK0B S20FNK08 S20FNK10 S20FNK12 S20FUA01 S20FUA02 S20FUA04 S20FUD01 S20FUD02 S20FÜD04 S20FUK01 S20FUK02 S20FUK04 S20LC20U S20LC40 S20LCA20 S20SC4M S20SC9M S20VT60 S20VT80 s m rm S20VTA80 S20WB20 S20WB60 S24LCA20

S24LCA20

Abstract: S20LCA20 L41C S20VT60 s20lc20u 547B S20FND10 S20FND12 S20FNK02 S20FNK04
Contextual Info: - M m « tt « S20FND1Q S20FND12 S20FNK02 S20FNK04 S20FNK0B * ' -y y # 'j iS y * V * 'y * ') & y H 'y y S20FNK08 S20FNK10 S20FNK12 S20FUA01 S20FUA02 * * * * S20FUA04 S20FUD01 S20FUD02 S20FÜD04 S20FUK01 S20FUK02 S20FUK04 S20LC20U S20LC40 S20LCA20 V) * ) 'y y

S25VB

Contextual Info: S25VB10 Thru S25VB100 High Current Glass Passivated Molding Single-Phase Bridge Rectifier Reverse Voltage 100 to 1000V Forward Current 25.0 A FEATURES z Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 z High current capacity with small

S5VB

Abstract: s4vb s2vb s5vb20 S4VB20 S2VB20 s4vb 10
Contextual Info: S Q IP B ridge Diodes Input/Output in-line terminal Absolute Maximum Ratings Type No. S3WB20 60 S10WB20 60 S15WB20 60 S20WB20 60 Vrm lo [V] 200 600 200 600 200 600 200 600 Electrical Characteristics S\l max (max) 0jp (max) Ca*a ] [*C/W] [•c /w ] [•c /w ]

Solitron J775-2

Abstract: BT196 SS14 TOSHIBA 1n5822 TOSHIBA SS550 BT127 SE140 NSR8140S NBS25-400 1N4007 toshiba
Contextual Info: CROSS REFERENCE INDUSTRIAL R u t No. 10D05 iœ i îœ i 10D2 1 302 im 1004 10D4 10D6 10 6 IO » im 11DQ03 11DQ04 11DQ05 11DQ06 15B4B41 15D4B41 15G4B41 15J4B41 1B4B42 im a im o naco in n o 1G4B42 lHi 117 1BB 1J4B42 1*1217 1*12171 1K1217B 1N1218 1K1218A 1*12188

J514

Contextual Info: SQ I PS! 7 'J Bridge Diode Square In-line Package • fl-fiN -J Ä H OUTLINE DIM ENSIO NS S25VB 600V 25A 45 £1 «a± *nîEowcB, memm*zmm<rc-£u RATINGS Absolute Maximum Ratings (itSw&v'i&'û- T c = 25°C) a 1 Item fiM R B K Storage Temperature ® # 6 R IK

Contextual Info: SQ.LP.3a W y v S W -K Bridge Diode Square In-line Package O U T L IN E D IM E N S IO N S S25VBD 600V 25A Unit • mm Weight • 23.8g fcfem • R A TIN G S Absolute Maximum Ratings II Operating Junction Temperature i±i Tj 150 °c I I - f - vi'K^tafE Dielectric Strength

S20LCA20

Abstract: l41c S24LCA20 s20lc20u 547B S20FND10 S20FND12 S20FNK02 S20FNK04 S20FNK06
Contextual Info: - M m S20FND1Q S20FND12 S20FNK02 S20FNK04 S20FNK0B S20FNK08 S20FNK10 S20FNK12 S20FUA01 S20FUA02 S20FUA04 S20FUD01 S20FUD02 S20FÜD04 S20FUK01 S20FUK02 S20FUK04 S20LC20U S20LC40 S20LCA20 « tt * # * * « kW (V) ') -y y 'j iS y AË V M (V) Vr V| Io (V) (V)

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

S25VB

Abstract: S25VB80 s25vb 40 Bridge Diode S25VB20 S25VB60 bridge diode s25vb60 diode bridge 25A
Contextual Info: SQ I P 型 Bridge Diode Square In-line Package •外観図 OUTLINE S25VB□ Unit : mm Weight : 21g（typ.） Package：S25VB 800V 25A 23 32 11 ① 特長 ② 60 16 32 ④ ロット記号（例） Date code S25VB ＋ • 耐湿性に優れ高信頼性 • 高耐熱性

SIVB20

Abstract: KIV6 SIWB20 SI0VB20 SIWB60 LT2150 sivb*60 SY242R5 S4VB40 si2kc20
Contextual Info: C A T .N O .F 0 0 7 SHINDENGEN PRODUCTS ’82 Semiconductors D.C.Switching Pow er Suppliel Solenoids & Ro tary Solenoid Sequence P ro c e sso rs tafm scSfM fcsrfrift — £ / jJ jid e s ig & n _ F lp c itn lc . J T la n u fn n tu n in g ._ i ffiiSsc , Sri

KBP307

Abstract: D2UB80
Contextual Info: QQQX2.E347214 - Electrically Isolated Semiconductor Devices - Component Home Quick Guide Contact Us UL.com QQQX2.E347214 Electrically Isolated Semiconductor Devices - Component Page Bottom Electrically Isolated Semiconductor Devices - Component See General Information for Electrically Isolated Semiconductor Devices - Component

S24LCA20

Abstract: L41C S20LCA20 s20lc20u S30VTA80 547B S20FND10 S20FND12 S20FNK02 S20FNK04
Contextual Info: - M m « tt « S20FND1Q S20FND12 S20FNK02 S20FNK04 S20FNK0B * ' -y y # 'j iS y * V * 'y * ') & y H 'y y S20FNK08 S20FNK10 S20FNK12 S20FUA01 S20FUA02 * * * * S20FUA04 S20FUD01 S20FUD02 S20FÜD04 S20FUK01 S20FUK02 S20FUK04 S20LC20U S20LC40 S20LCA20 Vr s m kW)

S25VB100

Abstract: rectifier S25VB60 S25VB40 rectifier S25VB100 S25VB10 S25VB80 bridge diode s25vb60 BRIDGE-RECTIFIER small package S25V S25VB20
Contextual Info: LESHAN RADIO COMPANY, LTD. S25VB10 Thru S25VB100 High Current Glass Passivated Single-Phase Bridge Rectifier FEATURES Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 High current capacity with small package Glass passivated chip junctions

bridge rectifier

Abstract: KBU2506
Contextual Info: BRIDGE RECTIFIER TYPE NO. Max.Reverse Voltage Max.Aver. Rect.Current Peak Fwd. Surge Current Max.Fwd. Voltage @25℃ & Rated Io VRM V Io(A) IFSM(A) Rated Io(A) VF(V) ABS2 200 0.8/1.0 30 0.4 ABS4 400 0.8/1.0 30 0.4 ABS6 600 0.8/1.0 30 ABS8 800 0.8/1.0 ABS10

S25VB100

Abstract: S25VB100W S25VB60W S25VB80 S25VB10
Contextual Info: LESHAN RADIO COMPANY, LTD. High Current Glass Passivated Single-Phase Bridge Rectifier S25VB10W Thru S25VB100W FEATURES ． Plastic Package has Underwriters Laboratory ．Flammability Classification 94V-0 ． High current capacity with small package ．Glass passivated chip junctions