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Integrated Silicon Solution Inc


Integrated Silicon Solution Inc IS21EF08G-JCLI 8GB/16GB eMMC with MLC NAND/eMMC 5.1 Interface - Trays (Alt: IS21EF08G-JCLI)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IS21EF08G-JCLI	Tray	1,475	53 Weeks, 1 Days	152	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip 1 Exchange	IS21EF08G-JCLI		40,002			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	IS21EF08G-JCLI			16 Weeks	152	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Integrated Silicon Solution Inc IS21EF08G-BCLI-TR 8GB, 153 BALL FBGA, 3.3V, BOOT PARTITION - Tape and Reel (Alt: IS21EF08G-BCLI-TR)
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Avnet Americas	IS21EF08G-BCLI-TR	Tape & Reel		52 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip 1 Exchange	IS21EF08G-BCLI-TR		40,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Integrated Silicon Solution Inc IS21EF16G-DCLI-TR 16GB, 153 BALL FBGA, 3.3V, BOOT PARTITION SIZE 32MB, ROHS,TR - Tape and Reel (Alt: IS21EF16G-DCLI-TR)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IS21EF16G-DCLI-TR	Tape & Reel		52 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Integrated Silicon Solution Inc IS21EF08GP-JQLI-TR 8GB, 100 BALL FBGA, 3.3V, ROHS, T & R, A - Tape and Reel (Alt: IS21EF08GP-JQLI-TR)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IS21EF08GP-JQLI-TR	Tape & Reel		12 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	IS21EF08GP-JQLI-TR			28 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Integrated Silicon Solution Inc IS21EF08G-DCLI Flash Memory, MLC NAND, 8 GB, 8G x 8bit, eMMC 5.1, FBGA, 153 Pins - Bulk (Alt: IS21EF08G-DCLI)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IS21EF08G-DCLI	Bulk		52 Weeks	152	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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S21EF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SC3356 s2p Abstract: 2SC3356 Application Note 2SC3356 nec marking 2sc3356 Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz	Original	2sc3356 2sc3356-t1 2sc3356 s2p 2sc3356 application note +1nec marking 2sc3356	PDF
2SC3355 Abstract: transistor 2sc3355 and application PA33 marking PA33 Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. PACKAGE DIMENSIONS	Original	2sc3355 transistor 2sc3355 and application pa33 marking pa33	PDF
2SC3356-T1B-A Abstract: 2SC3356 2SC3356 s2p 2SC3356-T1B Contextual Info: PreliminaryData Sheet 2SC3356 R09DS0021EJ0300 Rev.3.00 NPN Silicon RF Transistor Jun 28, 2011 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz	Original	2sc3356 r09ds0021ej0300 2sc3356-t1b 2sc3356-a +22sc3356-t1b-a 2sc3356 s2p	PDF
transistor sr 13009 Abstract: sr 13009 transistor d 13009 UPA831TF transistors W 5753 1997N apa831 ic 5219 8mm on 5297 transistor Contextual Info: PRELIMINARY DATA SH EET Silicon Transistor NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE DESCRIPTION PACKAGE DRAWINGS (Unit:mm) The ,uPA831TF has tw o different built-in transistors (Q1 and Q2) for tow noise am plification in the VHF band to UHF	OCR Scan	upa831tf 2sc4226 2sc4227 transistor sr 13009 +7sr 13009 transistor d 13009 transistors w 5753 1997n apa831 ic 5219 8mm on 5297 transistor	PDF
NPN transistor mhz s-parameter Abstract: T62 marking transistor 1047 2SC3841 LEN-160 Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3841 UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC3841 is an NPN silicon epitaxial transistor intended for use as UHF oscillators and a UHF mixer in a tuner of a TV receiver.	Original	2sc3841 npn transistor mhz s-parameter t62 marking transistor 1047 +1len-160	PDF
2SC3357 Abstract: RF Transistor s-parameter vhf sot89 TRANSISTOR MARKING AV marking 2sc3357 ic 0620 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC3357 is an NPN silicon epitaxial transistor designed for Unit: mm low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic.	Original	2sc3357 rf transistor s-parameter vhf sot89 transistor marking av marking 2sc3357 +1ic 0620	PDF
2SC3777 Abstract: 5137K Contextual Info: Ordering number: EN 1 9 5 0 tï N0.I95OB / / _ NPN Epitaxial Planar Silicon 2SC3777 Transistor UHF Oscillator, Mixer, Low-Noise Amp, _ Wide-Band Amp Applications I Applications . UHF frequency converters, band amplifiers local oscillators,	OCR Scan	1950b 2sc3777 5137k	PDF
MP 1009 es Abstract: transistor marking R37 ghz nec 0882 ZO 607 transistor transistor 7813 transistor NEC D 882 p 2SC4094 P10366EJ1V1DS00 gre 0723 Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4094 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4094 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-	Original	2sc4094 s21e2 mp 1009 es transistor marking r37 ghz +6nec 0882 zo 607 transistor transistor 7813 transistor nec d 882 p p10366ej1v1ds00 gre 0723	PDF
2SC3585 Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3585 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. The	Original	2sc3585	PDF
ic 4026 Abstract: 2SC4093 2SC4093-T1 2SC4093-T2 NPN transistor mhz s-parameter 4026 IC Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4093 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION +0.2 +0.1 0.6 −0.05 NF = 1.1 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High Power Gains 5° 5° PART NUMBER	Original	2sc4093 2sc4093-t1 2sc4093-t2 s21e2 +3ic 4026 npn transistor mhz s-parameter 4026 ic	PDF
marking PA33 Abstract: 2SC3582 PA33 Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in PACKAFE DIMENSIONS in millimeters inches low-noise and small signal amplifiers from VHF band to UHF band. Low-	Original	2sc3582 marking pa33 pa33	PDF
2SC3356 Abstract: IC nec 555 transistor 1431 T marking 544 low noise amplifier Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.	Original	2sc3356 ic nec 555 transistor 1431 t marking 544 low noise amplifier	PDF
AN 7591 POWER AMPLIFIER Abstract: ic an 7591 marking R33 transistor NEC D 587 2SC3583 AN 7591 2SC3583 R35 MARKING 6260 Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide	Original	2sc3583 an 7591 power amplifier ic an 7591 marking r33 +4transistor nec d 587 an 7591 2sc3583 r35 marking 6260	PDF
nec 817 Abstract: TRANSISTOR R46 2SC4095 transistor r47 Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.	Original	2sc4095 nec 817 transistor r46 transistor r47	PDF

2sc3356 Abstract: 2SC3356-T1B 2SC3356 s2p marking r25 NPN 2SC3356 r25 TRANSISTOR 2sc3356 Contextual Info: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	2sc3356 2sc3356-t1b vcb30 pu10209jj02v0ds +6l044-435-1588 x044-435-1579 2sc3356 s2p marking r25 npn 2sc3356 r25 transistor 2sc3356	PDF
LA 5530 Abstract: c 4977 transistor em 223 IC AT 6884 TRANSISTOR NPN 16085 Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR juPA826TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4959 THIN -TYPE SMALL MINI MOLD P A C K A G E D R A W IN G S (Unit: m m ) FEA TU R E S • Low noise and high gain	OCR Scan	upa826tf 2sc4959 pa826tf pa826tf59 +6jpa826tf la 5530 c 4977 transistor em 223 ic at 6884 transistor npn 16085	PDF
transistor 2sc3355 and application Abstract: 2sc3355 2SC3355, npn Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	pu10208ej01v0ds 2sc3355 transistor 2sc3355 and application 2sc3355, npn	PDF
marking PA33 Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3582 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range	Original	2sc3582 2sc3582-t pu10210ej01v0ds marking pa33	PDF
2SC3356 s2p Abstract: 2SC3356 Application Note 2SC3356-T1B 2SC3356 R24 marking DATASHEET TRANSISTOR 2sc3356 Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz	Original	2sc3356 2sc3356-t1b 2sc3356 s2p 2sc3356 application note +2r24 marking datasheet transistor 2sc3356	PDF
zo 607 MA Abstract: zo 607 of IC 7824 transistor zo 607 2SC4094 transistor ZO 607 MA gre 0723 Contextual Info: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	2sc4094 24nec zo 607 ma zo 607 +4of ic 7824 transistor zo 607 transistor zo 607 ma gre 0723	PDF
transistor NEC D 582 Abstract: AN 7591 POWER AMPLIFIER Nec b 616 an 7591 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR D ES C R IP TIO N The 2SC3583 is an NPN epitaxial silicon transistor designed for use in PACKAGE DIMENSIONS low-noise and small signal amplifiers from VHF band to UHF band. Low-	OCR Scan	2sc3583 transistor nec d 582 an 7591 power amplifier nec b 616 +1an 7591	PDF
2SC3545 Abstract: LEN-160 MARKING TRANSISTOR T44 Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3545 UHF OSCILLATOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC3545 is an NPN silicon epitaxial transistor intended for use as UHF oscillator and mixer in a tuner of a TV receiver. The device features stable oscillation and small frequency drift against	Original	2sc3545 len-160 marking transistor t44	PDF
NEC NF 932 Abstract: 2SC4092 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4092 is an NPN silicon epitaxial transistor designed for lownoise amplifier at VHF, UHF band.	Original	2sc4092 s21e2 nec nf 932	PDF
2SC2945 Abstract: 2SC2954 tc1458a IC 4025 Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC2954 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC2954 is an NPN epitaxial silicon transistor disigned for PACKAGE DIMENSIONS low noise wide band amplifier and buffer amplifier of OSC, for VHF	Original	2sc2954 2sc2945 tc1458a ic 4025	PDF

S21EF Search Results

S21EF Price and Stock

Integrated Silicon Solution Inc IS21EF08G-JCLI

Integrated Silicon Solution Inc IS21EF08G-BCLI-TR

Integrated Silicon Solution Inc IS21EF16G-DCLI-TR

Integrated Silicon Solution Inc IS21EF08GP-JQLI-TR

Integrated Silicon Solution Inc IS21EF08G-DCLI

S21EF Datasheets Context Search

2SC3356 s2p

2SC3355

2SC3356-T1B-A

transistor sr 13009

NPN transistor mhz s-parameter

2SC3357

2SC3777

MP 1009 es

2SC3585

ic 4026

marking PA33

2SC3356

AN 7591 POWER AMPLIFIER

nec 817

2sc3356

LA 5530

transistor 2sc3355 and application

marking PA33

2SC3356 s2p

zo 607 MA

transistor NEC D 582

2SC3545

NEC NF 932

2SC2945