transistor sr 13009
Abstract: sr 13009 transistor d 13009 UPA831TF transistors W 5753 1997N apa831 ic 5219 8mm on 5297 transistor
Contextual Info: PRELIMINARY DATA SH EET Silicon Transistor NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE DESCRIPTION PACKAGE DRAWINGS (Unit:mm) The ,uPA831TF has tw o different built-in transistors (Q1 and Q2) for tow noise am plification in the VHF band to UHF
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upa831tf2sc42262sc4227transistor sr 13009+7sr 13009transistor d 13009transistors w 57531997napa831ic 5219 8mmon 5297 transistor
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apa831
Abstract: APA832 AQZ404 LED 10mA
Contextual Info: PhotoMOS MOSFET PhotoMOS MOSFET输出光电耦合器 输出光电耦合器) 功率 1b 尺寸图 VDE 分类与电路构成 动作原理的说明 P.240 P.244 P.236 术语说明 P.245 使用注意事项 应用电路示例 P.246 对应RoHS 标准认证一览
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aqz404f100hz0100msapa831+2apa832led 10ma
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apa831
Abstract: DUTY50 AQZ102D AQZ104D AQZ105D AQZ107D AQZ202D AQZ204D AQZ205D AQZ207D
Contextual Info: PhotoMOS MOSFET PhotoMOS MOSFET输出光电耦合器 输出光电耦合器) 功率1a电压驱动 尺寸图 分类与电路构成 动作原理的说明 P.240 P.244 P.236 对应RoHS VDE 术语说明 使用注意事项 P.245 应用电路示例 P.246 标准认证一览
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aqz102d60v100v200v400vaqz105daqz107d+7aqz104daqz202daqz205daqz207daqz204dapa831duty50
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AQZ102
Abstract: AQZ204 apa831 AQZ105 AQZ107 AQZ205 AQZ104 AQZ202 AQZ207 APA832
Contextual Info: PhotoMOS MOSFET PhotoMOS MOSFET输出光电耦合器 输出光电耦合器) 功率 1a 尺寸图 分类与电路构成 动作原理的说明 P.240 P.244 P.236 对应RoHS VDE 术语说明 使用注意事项 P.245 应用电路示例 P.246 标准认证一览
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aqz10260v100v200v400vaqz105aqz107+7aqz104aqz202aqz205aqz207aqz204apa831apa832
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apa831
Abstract: AQZ10 AQZ102 AQZ104 AQZ105 AQZ107 AQZ202 AQZ204 AQZ205 AQZ207
Contextual Info: Power PhotoMOS AQZ10❍, 20❍ High capacity PhotoMOS Relay. (Load current Max. 4A) DC load type is available. 3.5 .138 21 .827 12.5 .492 mm inch 1 – 2 3 + 4 AC/DC type 1 – 2 3 + – 4 + DC type Compliance with RoHS Directive Power PhotoMOS (AQZ10❍, 20❍)
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aqz10apa831aqz102aqz104+6aqz105aqz107aqz202aqz204aqz205aqz207
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