h22e
Contextual Info: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP Type Marking SMBT2222A/MMBT2222A s1P 1 Pin Configuration 1=B 2=E Package
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npn 2222 transistor
Abstract: s1P SOT23 SMBT2222A SOT23 SMBT2222A SMBT2907A MARKING s1P MARKING 1B SOT23 EHN00056
Contextual Info: SMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings
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smbt2222asmbt2907avps051612222/a+9ehp00744ehp00745jul-11-2001npn 2222 transistors1p sot23smbt2222a sot23marking s1pmarking 1b sot23ehn00056
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br 2222 npn
Abstract: SMBT2222A SMBT2907A
Contextual Info: SMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings
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smbt2222asmbt2907avps051612222/a+4ehp00744ehp00745may-29-2001br 2222 npn
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h11E
Contextual Info: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2907A / MMBT2907A PNP • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P
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SMBT2907AW
Abstract: MARKING s1P smbt2222a sot23 marking code S1p MARKING BCW66 77 ic marking code transistor marking code 24 24 marking code transistor transf SMBT2222A SOT23
Contextual Info: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration
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smbt2222a/mmbt2222asmbt2907awbcw66marking s1p+7smbt2222a sot23 marking codes1p marking77 ic marking codetransistor marking code 2424 marking code transistortransfsmbt2222a sot23
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s1P SOT23
Abstract: 619 SOT23-3 h11e
Contextual Info: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration
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smbt2222a/mmbt2222asmbt2907aws1p sot23619 sot23-3+1h11e
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MARKING s1P
Contextual Info: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161
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smbt2222a/mmbt2222asmbt2907avps05161+1marking s1p
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Contextual Info: FJX2222A NPN Epitaxial Silicon Transistor Features • General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 3 Marking S1P 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol
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transistor s1p
Abstract: MARKING S1P S1P transistor FJX2222A ESBC Fairchild dual NPN silicon transistor
Contextual Info: FJX2222A NPN Epitaxial Silicon Transistor Features • General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 3 Marking S1P 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol
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fjx2222a325mwot-323transistor s1p+4marking s1ps1p transistoresbcfairchild dual npn silicon transistor
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npn 2222 transistor
Abstract: MMBT2222A SMBT2222A SMBT2907A MARKING s1P
Contextual Info: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161
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smbt2222a/mmbt2222asmbt2907avps05161+62222/aehp00744ehp00745npn 2222 transistorsmbt2222amarking s1p
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Contextual Info: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161
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MARKING s1P
Abstract: 99V0
Contextual Info: SMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings
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smbt2222asmbt2907avps05161nov-30-2001+52222/aehp00742ehp00743marking s1p99v0
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2SD882P
Abstract: ch3904 marking J1 sot-23 T05 sot-23 sot-23 marking NE MARKING J3 SOT-23 marking NB SOT-23 CHT846BWPTR LT 723 ic marking J2 sot-23
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector to Emitter Marking Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA 200 500 200 150 150 150 500 200 100 100 100 50 500 200 600 600 100 100 100 150 150 150 200
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sc-622sd882pch3904marking j1 sot-23+7t05 sot-23sot-23 marking nemarking j3 sot-23marking nb sot-23cht846bwptrlt 723 icmarking j2 sot-23
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2222 NPN
Abstract: br 2222 npn npn 2222 2222a 2222 2907 pnp 2222 A DSA0032624 equivalent of 2222 NPN Q68000-A6473
Contextual Info: NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2907, SMBT 2907 A PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration
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q68000-a6481q68000-a6473ot-232222 npn+8br 2222 npnnpn 22222222a22222907 pnp2222 adsa0032624equivalent of 2222 npn
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2222a
Abstract: npn 2222 2222 NPN br 2222 npn 2222 A 2222
Contextual Info: NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2907, SMBT 2907 A PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration
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NB SOT-23 NPN
Abstract: ch3904 CHT44 transistor marking s1a transistor s1p marking 1P sot-23 T05 sot-23 transistor marking t05 transistor C4G sot-23 39 MARKING SOT223
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector to Emitter Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Voltage Power Gain Outline Collector to
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ch3904tcht2222t2sc4097ch3904w+15cht05cht42chta42lcht442sc2411k2sc2412knb sot-23 npnch3904transistor marking s1atransistor s1pmarking 1p sot-23t05 sot-23transistor marking t05transistor c4g sot-2339 marking sot223
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Contextual Info: SIEMENS NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: SMBT 2907, SMBT 2907 A PNP Type Marking Ordering Code (tape and reel) PinC Contigui ation
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q68000-a6481q68000-a6473ot-232222/a+4fi235bd50155s2sa235b05012552b
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2222A
Abstract: npn 2222 2222 A 2222 kn a MARKING s1P Q68000-A6481 kn sot23 BT2222
Contextual Info: SIEMENS NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: SMBT 2907, SMBT 2907 A PNP Type Marking Ordering Code (tape and reel) Pin Configuration
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q68000-a6481q68000-a6473ot-232211/t+72222anpn 22222222 a2222 kn amarking s1pkn sot23bt2222
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s1P SOT23
Abstract: S1p MARKING BBY31 MARKING S1P SOT23 DIODE marking CODE 28 "Variable Capacitance Diode" VARIABLE CAPACITANCE DIODE
Contextual Info: b3E J> m _ bbSB'lEM GQ7427M 72Ö « S I C 3 NAPC/PHILIPS BBY31 J SEniCOND FOR D E T A IL E D IN F O R M A T IO N SEE T H E L A TE S T ISSUE OF H A N D B O O K SC01 OR D A T A S H E E T VARIABLE CAPACITANCE DIODE S ilicon planar variable capacitance diode in a m icro m in ia tu re envelope. It is intended fo r e le ctro n ic
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gq7427mbby31ot-23s1p sot23+4s1p markingmarking s1psot23 diode marking code 28variable capacitance diode
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CHT2222AGP
Abstract: transistor s1p
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT2222AGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.
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PXTA14
Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.
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ot143ot323od123od323+15bzv49baw56wbsr402pb709arbaw56bsr41pxta14mark a7 sot23pmbz52227bmarking code m10 sot89dc/sot89 marking code 3d2pb710arbst60pmbta14pmbt4401
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transistor s1p
Abstract: S1P transistor S1p MARKING F1 SOT-323
Contextual Info: FJX2222A FJX2222A General Purpose Transistor 2 1 NPN Epitaxial Silicon Transistor SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCES Collector-Emitter Voltage
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MARKING s1P
Abstract: FJX2222A transistor s1p
Contextual Info: FJX2222A FJX2222A General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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fjx2222a325mwot-323marking s1p+1transistor s1p
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MARKING s1P
Abstract: FJX2222A transistor s1p
Contextual Info: FJX2222A FJX2222A 3 General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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fjx2222a325mwot-32375opment+2marking s1ptransistor s1p
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